PC8179TB-E3

UPC8179TB_1 NEC | Alldatasheet

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Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG INTEGRATED CIRCUIT µµµµPC8179TB SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS Document No. P14730EJ2V0DS00 (2nd edition) Date Published August 2000 N CP(K) Printed in Japan DATA SHEET 2000©

DESCRIPTION

The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω wideband matched IC. This low current amplifier operates on 3.0 V. This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

• Low current consumption : I CC = 4.0 mA TYP. @ VCC = 3.0 V
• Supply voltage : V CC = 2.4 to 3.3 V
• High efficiency : P O (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz
• Power gain : G P = 13.5 dB TYP. @ f = 1.0 GHz G P = 15.5 dB TYP. @ f = 1.9 GHz G P = 15.5 dB TYP. @ f = 2.4 GHz
• Excellent isolation : ISL = 44 dB TYP. @ f = 1.0 GHz ISL = 42 dB TYP. @ f = 1.9 GHz ISL = 41 dB TYP. @ f = 2.4 GHz
• Operating frequency : 0.1 to 2.4 GHz (Output port LC matching)
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Light weight : 7 mg (Standard value) APPLICATION
• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system

Data Sheet P14730EJ2V0DS002 µµµµPC8179TB

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPC8179TB-E3 6-pin super minimold C3C Embossed tape 8 mm wide. 1, 2, 3 pins face the perforation side of the tape. Qty 3 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPC8179TB) PIN CONNECTIONS C3C (Top View) (Bottom View) Pin No. Pin Name

1 INPUT

Data Sheet P14730EJ2V0DS00 3 µµµµPC8179TB PRODUCT LINE-UP (TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 ΩΩΩΩ )

1.0 GHz output port

1.66 GHz output port

1.9 GHz output port

2.4 GHz output port

Part No. ICC (mA) G P (dB) ISL (dB) PO(1 dB) (dBm) G P (dB) ISL (dB) PO(1 dB) (dBm) G P (dB) ISL (dB) PO(1 dB) (dBm) G P (dB) ISL (dB) PO(1 dB) (dBm) Marking Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. SYSTEM APPLICATION EXAMPLE Location examples in digital cellular RX Low Noise Tr. SW TX ÷N PLL PLL I Q I Q DEMOD. 90°PA φ These ICs can be added to your system around V parts, when you need more isolation or gain. The application herein, however, shows only examples, therefore the application can depend on your kit evaluation.

Data Sheet P14730EJ2V0DS004 µµµµPC8179TB PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Internal Equivalent Circuit 1 INPUT − 1.09 Signal input pin. A internal matching circuit, configured with resisters, enables 50 Ω connec- tion over a wide band. This pin must be coupled to signal source with capacitor for DC cut. GND 0 − Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be con- nected together with wide ground pattern to decrease impedance defference.

4 OUTPUT voltage

− Signal output pin. This pin is de- signed as collector output. Due to the high impedance output, this pin should be externally equipped with LC matching circuit to next stage. For L, a size 1005 chip inductor can be chosen. 6V CC 2.4 to 3.3 − Power supply pin. This pin should be externally equipped with bypass capacitor to minimize its impedance. 3 5 Note Pin voltage is measured at VCC = 3.0 V.

Data Sheet P14730EJ2V0DS00 5 µµµµPC8179TB ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage V CC TA = +25 °C, Pin 4, Pin 6 3.6 V Circuit Current I CC TA = +25 °C 15 mA Power Dissipation P D Mounted on double sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB (TA = +85 °C) 270 mW Operating Ambient Temperature TA −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in TA = +25 °C +5 dBm RECOMMENDED OPERATING CONDITIONS Parameter Symbol MIN. TYP. MAX. Unit Remarks Supply Voltage V CC 2.4 3.0 3.3 V The same voltage should be applied to pin 4 and pin 6. Operating Ambient Temperature TA −40 +25 +85 °C

ELECTRICAL CHARACTERISTICS

(Unless otherwise specified, TA = +25 °C, VCC = Vout = 3.0 V, ZS = ZL = 50 ΩΩΩΩ , at LC matched frequency) Parameter Symbol Conditions MIN. TYP. MAX. Unit Circuit Current I CC No signal 2.9 4.0 5.4 mA Power Gain G P f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm 11.0 13.0 13.0 13.5 15.5 15.5 15.5 17.5 17.5 dB Isolation ISL f = 1.0 GHz, P in = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm dB 1 dB Gain Compression Output Power Po(1dB) f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz −0.5 −2.0 −3.0 +3.0 +1.5 +1.0 dBm Noise Figure NF f = 1.0 GHz f = 1.9 GHz f = 2.4 GHz 5.0 5.0 5.0 6.5 6.5 6.5 dB Input Return Loss (Without matching circuit) RL in f = 1.0 GHz, Pin = −30 dBm f = 1.9 GHz, Pin = −30 dBm f = 2.4 GHz, Pin = −30 dBm dB

Data Sheet P14730EJ2V0DS006 µµµµPC8179TB TEST CIRCUITS <1> f = 1.0 GHz IN OUT 1C 1 C 2 VCC C 3 2, 3, 5 50 Ω Output port matching circuit 50 Ω <2> f = 1.9 GHz IN OUT 1C 1 C 2 VCC C 3 C 5 C 6C 4 2, 3, 5 50 Ω Output port matching circuit 50 Ω <3> f = 2.4 GHz IN OUT 1C 1 C 2 VCC C 4 C 5C 3 2, 3, 5 50 Ω Output port matching circuit 50 Ω

Data Sheet P14730EJ2V0DS00 7 µµµµPC8179TB ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD <1> f = 1.0 GHz OUT IN AMP-4 Top View C 3 C 1 C 2 C3C Mounting direction Connector Connector COMPONENT LIST

1.0 GHz Output Port Matching

C 2 0.75 pF C 3 10 pF L1 12 nH

Data Sheet P14730EJ2V0DS008 µµµµPC8179TB <2> f = 1.9 GHz OUT IN AMP-4 Top View C 6 C 5 C 4 C 1 C 2 C 3 C3C Mounting direction Connector Connector COMPONENT LIST

1.9 GHz Output Port Matching

C 1, C3, C5, C6 1 000 pF C 2 0.75 pF C 4 10 pF L1 3.3 nH

Data Sheet P14730EJ2V0DS00 9 µµµµPC8179TB <3> f = 2.4 GHz OUT IN AMP-4 Top View C 5 C 4 C 3 C 1 C 2L2 C3C Mounting direction Connector Connector COMPONENT LIST

2.4 GHz Output Port Matching

C 1, C2, C4, C5 1 000 pF C 3 10 pF L1 1.8 nH L2 2.7 nH NOTES (∗1) 42 × 35 × 0.4 mm double sided copper clad polyimide board (∗2) Solder plated on pattern (∗3) Back side: GND pattern (∗4) : Through holes

Data Sheet P14730EJ2V0DS0010 µµµµPC8179TB TYPICAL CHARACTERISTICS (unless otherwise specified, TA = +25°°°°C) 00 1 23 4 CIRCUIT CURRENT vs. SUPPLY VOLTAGE Circuit Current ICC (mA) Supply Voltage VCC (V) 0–60 CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE Circuit Current ICC (mA) Operating Ambient Temperature TA (°C) No signals –40 –20 0 +20 +40 +60 +80 +100 No signals VCC = 3.0 V

Data Sheet P14730EJ2V0DS00 11 µµµµPC8179TB S-PARAMETER (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V MARKER 1

1 GHz

START 100.000 000 MHz 1: 73.629 ΩS11 S22 –61.461 Ω 2.5895 pF 1 000.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz STOP 3 100.000 000 MHz 1: 50.812 Ω 20.338 Ω 3.2369 nH 1 000.000 000 MHz MARKER 1

Data Sheet P14730EJ2V0DS0012 µµµµPC8179TB +20 +10 –10 –20 –400.1 0.3 1.0 3.0 POWER GAIN vs. FREQUENCY Power Gain GP (dB) Frequency f (GHz) VCC = 3.3 V –30 VCC = 3.0 V VCC = 2.4 V +20 +10 –10 –20 –400.1 0.3 1.0 3.0 POWER GAIN vs. FREQUENCY Power Gain GP (dB) Frequency f (GHz) TA = –40°C –30 TA = +25°C TA = +85°C VCC = 3.0 V –10 –20 –30 –40 –50 –700.1 0.3 1.0 3.0 ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) VCC = 3.3 V –60 VCC = 3.0 V VCC = 2.4 V –10 –20 –30 –40 –50 –700.1 0.3 1.0 3.0 ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) –60 TA = –40°C TA = +25°C TA = +85°C VCC = 3.0 V TA = –40°C TA = +25°C TA = +85°C VCC = 3.0 V –10 –15 –20 –300.1 0.3 1.0 3.0 INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) VCC = 3.3 V –25 VCC = 3.0 V VCC = 2.4 V –10 –15 –20 –300.1 0.3 1.0 3.0 INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) –25

Data Sheet P14730EJ2V0DS00 13 µµµµPC8179TB –10 –15 –250.1 0.3 1.0 3.0 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Frequency f (GHz) –20 VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V –10 –15 –250.1 0.3 1.0 3.0 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Frequency f (GHz) –20 TA = –40°C VCC = 3.0 V TA = +85°C TA = +25°C +10 –10 –30–40 –30 0 +5 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) –15 VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V –20 –25 +10 –10 –30–40 –30 0 +5 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) –15 –20 –25 T A = –40°C VCC = 3.0 V TA = +85°C TA = +25°C +20 +10 –20 –30 –40 –80–40 –30 0 3RD ORDER INTERMODULATION DISTORTION, OUTPUT POWER OF EACH TONE vs. INPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBm) Output Power of Each Tone Pout(each) (dBm) Input Power of Each Tone Pin(each) (dBm) –50 IM3 Pout(each) VCC = 3.0 V f1 = 1 000 MHz f2 = 1 001 MHz –60 –70 –10 0–20 –15 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone Pout(each) (dBm) f1 = 1 000 MHz f2 = 1 001 MHz –10 –5 0 VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V

Data Sheet P14730EJ2V0DS0014 µµµµPC8179TB 6.0 5.5 5.0 4.5 4.0 3.0 2.0 2.5 3.0 3.5 NOISE FIGURE vs. SUPPLY VOLTAGE Noise Figure NF (dB) Supply Voltage VCC (V) 3.5 TA = +85°C TA = –40°C TA = +25°C

Data Sheet P14730EJ2V0DS00 15 µµµµPC8179TB S-PARAMETER (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V MARKER 1

1.9 GHz

START 100.000 000 MHz 1: 38.717 ΩS11 S22 –48.486 Ω 1.7276 pF 1 900.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz STOP 3 100.000 000 MHz 1: 62.379 Ω –6.1953 Ω 13.521 pF 1 900.000 000 MHz MARKER 1

Data Sheet P14730EJ2V0DS0016 µµµµPC8179TB +20 +10 –10 –20 –400.1 0.3 1.0 3.0 POWER GAIN vs. FREQUENCY Power Gain GP (dB) Frequency f (GHz) VCC = 3.3 V –30 VCC = 3.0 V VCC = 2.4 V +20 +10 –10 –20 –400.1 0.3 1.0 3.0 POWER GAIN vs. FREQUENCY Power Gain GP (dB) Frequency f (GHz) TA = –40°C –30 TA = +25°C TA = +85°C VCC = 3.0 V –10 –20 –30 –40 –50 –700.1 0.3 1.0 3.0 ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) VCC = 3.3 V –60 VCC = 3.0 V VCC = 2.4 V –10 –20 –30 –40 –50 –700.1 0.3 1.0 3.0 ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) –60 TA = –40°C TA = +25°C TA = +85°C VCC = 3.0 V TA = –40°C TA = +25°C TA = +85°C VCC = 3.0 V –10 –15 –20 –300.1 0.3 1.0 3.0 INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) VCC = 3.3 V –25 VCC = 3.0 V VCC = 2.4 V –10 –15 –20 –300.1 0.3 1.0 3.0 INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) –25

Data Sheet P14730EJ2V0DS00 17 µµµµPC8179TB –10 –15 –250.1 0.3 1.0 3.0 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Frequency f (GHz) –20 VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V –10 –15 –250.1 0.3 1.0 3.0 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Frequency f (GHz) –20 TA = –40°C VCC = 3.0 V TA = +85°C TA = +25°C +10 –10 –30–40 –30 0 +5 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) –15 VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V –20 –25 +10 –10 –30–40 –30 0 +5 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) –15 –20 –25 T A = –40°C VCC = 3.0 V TA = +85°C TA = +25°C +20 +10 –20 –30 –40 –80–40 –30 0 3RD ORDER INTERMODULATION DISTORTION, OUTPUT POWER OF EACH TONE vs. INPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBm) Output Power of Each Tone Pout(each) (dBm) Input Power of Each Tone Pin(each) (dBm) –50 IM3 Pout(each) VCC = 3.0 V f1 = 1 900 MHz f2 = 1 901 MHz –60 –70 –10 0–20 –15 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone Pout(each) (dBm) f1 = 1 900 MHz f2 = 1 901 MHz –10 –5 0 VCC = 2.4 V V CC = 3.0 V VCC = 3.3 V

Data Sheet P14730EJ2V0DS0018 µµµµPC8179TB 5.5 5.0 4.5 4.0 3.0 2.0 2.5 3.0 3.5 NOISE FIGURE vs. SUPPLY VOLTAGE Noise Figure NF (dB) Supply Voltage VCC (V) 3.5 TA = +85°C TA = –40°C TA = +25°C

Data Sheet P14730EJ2V0DS00 19 µµµµPC8179TB S-PARAMETER (monitored at connector on board) TA = +25°C, VCC = Vout = 3.0 V MARKER 1

2.4 GHz

START 100.000 000 MHz 1: 31.709 Ω –36.367 Ω 1.8235 pF 2 400.000 000 MHz STOP 3 100.000 000 MHz START 100.000 000 MHz STOP 3 100.000 000 MHz 1: 41.473 Ω 8.8828 Ω 589.06 pH 2 400.000 000 MHz S11 S22

Data Sheet P14730EJ2V0DS0020 µµµµPC8179TB +20 +10 –10 –20 –400.1 0.3 1.0 3.0 POWER GAIN vs. FREQUENCY Power Gain GP (dB) Frequency f (GHz) VCC = 3.3 V –30 VCC = 3.0 V VCC = 2.4 V +20 +10 –10 –20 –400.1 0.3 1.0 3.0 POWER GAIN vs. FREQUENCY Power Gain GP (dB) Frequency f (GHz) TA = –40°C –30 TA = +25°C TA = +85°C VCC = 3.0 V –10 –20 –30 –40 –50 –700.1 0.3 1.0 3.0 ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) VCC = 3.3 V –60 VCC = 3.0 V VCC = 2.4 V –10 –20 –30 –40 –50 –700.1 0.3 1.0 3.0 ISOLATION vs. FREQUENCY Isolation ISL (dB) Frequency f (GHz) –60 TA = –40°C TA = +25°C TA = +85°C VCC = 3.0 V TA = –40°C TA = +25°C TA = +85°C VCC = 3.0 V –10 –15 –20 –300.1 0.3 1.0 3.0 INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) VCC = 3.3 V –25 VCC = 3.0 V VCC = 2.4 V –10 –15 –20 –300.1 0.3 1.0 3.0 INPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Frequency f (GHz) –25

Data Sheet P14730EJ2V0DS00 21 µµµµPC8179TB –10 –15 –250.1 0.3 1.0 3.0 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Frequency f (GHz) –20 VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V –10 –15 –250.1 0.3 1.0 3.0 OUTPUT RETURN LOSS vs. FREQUENCY Output Return Loss RLout (dB) Frequency f (GHz) –20 TA = –40°C VCC = 3.0 V TA = +85°C TA = +25°C +10 –10 –30–40 –30 0 +5 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) –15 VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V –20 –25 +10 –10 –30–40 –30 0 +5 OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) –15 –20 –25 T A = –40°C VCC = 3.0 V TA = +85°C TA = +25°C +20 +10 –20 –30 –40 –80–40 –30 0 3RD ORDER INTERMODULATION DISTORTION, OUTPUT POWER OF EACH TONE vs. INPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBm) Output Power of Each Tone Pout(each) (dBm) Input Power of Each Tone Pin(each) (dBm) –50 IM3 Pout(each) VCC = 3.0 V f1 = 2 400 MHz f2 = 2 401 MHz –60 –70 –10 0–20 –15 +5 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) Output Power of Each Tone Pout(each) (dBm) f1 = 2 400 MHz f2 = 2 401 MHz –10 –5 0 VCC = 2.4 V VCC = 3.0 V VCC = 3.3 V

Data Sheet P14730EJ2V0DS0022 µµµµPC8179TB 5.5 5.0 4.5 4.0 3.0 2.0 2.5 3.0 3.5 NOISE FIGURE vs. SUPPLY VOLTAGE Noise Figure NF (dB) Supply Voltage VCC (V) 3.5 TA = +85°C TA = –40°C TA = +25°C Remark The graphs indicate nominal characteristics.

Data Sheet P14730EJ2V0DS00 23 µµµµPC8179TB S-PARAMETER (V CC = Vout = 3.0 V) S11-FREQUENCY 0.1 G 1.0 G3.0 G 2.0 G S22-FREQUENCY 0.1 G 1.0 G 3.0 G 2.0 G

Data Sheet P14730EJ2V0DS0024 µµµµPC8179TB TYPICAL S-PARAMETER VALUES (T A = +25°°°°C) VCC = Vout = 3.0 V, ICC = 4.0 mA FREQUENCY S 11 S21 S12 S22

Data Sheet P14730EJ2V0DS00 25 µµµµPC8179TB PACKAGE DIMENSIONS

6 PIN SUPER MINIMOLD (UNIT: mm)

0.9–0.1 0.7 0 to 0.1 2.0–0.2 1.3 0.650.65 0.2+0.1 –0.05 2.1–0.1 1.25–0.1 0.1 MIN. +0.1 –0.05 0.15

Data Sheet P14730EJ2V0DS0026 µµµµPC8179TB NOTES ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to VCC line. (4) The inductor (L) should be attached between output and VCC pins. The L and series capacitor (C) values should be adjusted for applied frequency to match impedance to next stage. (5) The DC capacitor must be attached to input pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E) .

Data Sheet P14730EJ2V0DS00 27 µµµµPC8179TB [MEMO]

µµµµPC8179TB ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES M8E 00. 4 The information in this document is current as of August, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).