PC358MF-DAA_15 RENESAS | Alldatasheet
Document overview
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Technical content
Features
- The package is compliant with a JEDEC standard (MS-012).
- Thermal resistance was improved more than 30% from existing μ PC358G2 by adopting copper-based lead material. (Rth(j-a) = 156°C/W)
- Wider Operating Ambient Temperature range than μ PC358G2 ⎯ μ PC358MF-DAA (TA = −40 to +85°C), μ PC358G2 (TA = −20 to +80°C)
- Input Offset Voltage ±2 mV (TYP.)
- Input Bias Current 14 nA (TYP.)
- Internal frequency compensation
- Output short-circuit protection
- Large Signal Voltage Gain 100000 (TYP.)
Ordering Information
Part No. Package Package Type μ PC358MF-DAA-E1-AT∗1 8-pin plastic SOP (3.9 × 4.9) • 12 mm wide embossed taping
- Pin 1 on draw-out side
- 2500 p/reel μ PC358MF-DAA-E2-AT∗1 8-pin plastic SOP (3.9 × 4.9) • 12 mm wide embossed taping
- Pin 1 at take-up side
- 2500 p/reel Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.) CAUTION Do not use the products in applications such as the transportation equipment (a car, a train, a ship, etc.) where "Special quality grade" is required, because the products are placed in a quality grade "standard" to be required at general devices. R03DS0005EJ0100 Rev.1.00 Aug 04, 2010
μ PC358MF-DAA Chapter Title R03DS0005EJ0100 Rev.1.00 Page 2 of 8 Aug 04, 2010 Equivalent Circuit (1/2 Circuit) Q13 OUT 6 A CC Q3Q2 Q8 Q9 Q12 Q11 Q10 IN I I RSC 6 A 100 A 50 A μμ μ μ Pin Configuration (Marking side) OUT1 IN1 OUT2II1 II2 IN2 1 2 −+ − + Absolute Maximum Ratings (TA = 25°C) Parameter Symbol Ratings Unit Voltage between V+ and V− ∗1 V +−V− −0.3 to +32 V Differential Input Voltage V ID ±32 V Input Voltage ∗2 V I V − − 0.3 to V− + 32 V Output Applied Voltage ∗3 V O V − − 0.3 to V+ + 0.3 V Total Power Dissipation ∗4 P T 440 mW Output Short Circuit Duration (vs. GND) ∗5 t S Indefinite s Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +125 °C Notes: ∗1.Note that reverse connections of the power supply may damage ICs. ∗2.The input voltage is allowed to input without damage or destruction independent of the magnitude of V+. Either input signal is not allowed to go negative by more than 0.3 V. In addition, the input voltage that operates normally as an operational amplifier is within the Common Mode Input Voltage range of an electrical characteristic. ∗3.A range where input voltage can be applied to an output pin externally with no deterioration or damage to the feature (characteristic). The input voltage can be applied regardless of the electric supply voltage. This specification which includes the transition state such as electric power ON/OFF must be kept. ∗4.This is the value in TA ≤ 56°C of when the glass epoxy substrate (size: 100 mm x 100 mm, thickness: 1 mm, 15% of the substrate area where only one side is copper foiled is filling wired) is mounted. Derate at −6.4 mW/°C when TA > 56°C. In the condition same as the above, Junction − ambient thermal resistance Rth(J-A) = 156°C/W. ∗5.Only as for V+ ≤ 15V and any 1 channel. Please use the product within the derating condition or Total Power Dissipation, which are showed in Note 4.
μ PC358MF-DAA Chapter Title R03DS0005EJ0100 Rev.1.00 Page 3 of 8 Aug 04, 2010 Recommended Operating Conditions Parameter Symbol MIN. TYP. MAX. Unit Power Supply Voltage (Split) V ± ±1.5 ±15 V Power Supply Voltage (V−= GND) V + +3 +30 V Electrical Characteristics (TA = 25°C, V+ = +5 V, V- = GND) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Offset Voltage VIO R S = 0 Ω ±2 ±7 mV Input Offset Current IIO ±5 ±50 nA Input Bias Current ∗1 IB 14 250 nA Large Signal Voltage Gain AV R L ≥ 2 kΩ 25000 100000 Circuit Current ∗2 ICC R L = ∞, IO = 0 A 0.7 1.2 mA Common Mode Rejection Ratio CMR 65 70 dB Supply Voltage Rejection Ratio SVR 65 100 dB Output Voltage Swing VO R L = 2 kΩ (Connect to GND) 0 V +−1.5 V Common Mode lnput Voltage Range VICM 0 V +−1.5 V Output Source Current I O SOURCE V IN (+) = +1V, VIN (−) = 0 V 20 40 mA IO SINK1 V IN (−) = +1 V, VIN (+) = 0 V 10 20 mA Output Sink Current IO SINK2 VIN (−) = +1 V, VIN (+) = 0 V, VO = 200 mV 12 50 μA Channel Separation f = 1 to 20 kHz 120 dB Notes: ∗1.The input bias current flows in the direction where the IC flows out because the first stage is configured with a PNP transistor. ∗2.This is a current that flows in the internal circuit. This current will flow irrespective of the channel used.
μ PC358MF-DAA Chapter Title R03DS0005EJ0100 Rev.1.00 Page 4 of 8 Aug 04, 2010 Typical Performance Characteristics (TA = 25°C, TYP.) (Reference value) PT vs. TA ICC vs. V PT - Total Power Dissipation - mW 100 200 300 400 500 0 20 40 60 80 100 120 When the glass epoxy substrate (size: 100 mm x 100 mm, thickness: 1 mm) is mounted. For the details, see Absolute Maximum Ratings Note 4. TA - Operating Ambient Temperature - °C ICC - Supply Current - mA 0 5 10 15 20 25 30 35 40 TA = 25°C 85°C −40°C RL = ∞ IO = 0 A V - Power Supply Voltage - V (V- = GND) VIO vs. V VIO vs. TA VIO - Input Offset Voltage - mV V - Power Supply Voltage - V (V- = GND) VIO - Input Offset Voltage - mV -50 0 50 100 V = +5 V, V = GND The characteristic values of arbitrarily-chosen five samples TA - Operating Ambient Temperature - °C IB vs. V IB vs. TA IB - Input Bias Current - nA 0 1 02 03 04 0 V - Power Supply Voltage - V (V- = GND) IB - Input Bias Current - nA -50 -25 0 25 50 75 100 V+ = +15 V V- = GND TA - Operating Ambient Temperature - °C
μ PC358MF-DAA Chapter Title R03DS0005EJ0100 Rev.1.00 Page 5 of 8 Aug 04, 2010 IO SHORT vs. TA AV vs. V IO SHORT - Output Short Current - mA -20 0 20 40 60 80 IO SHORT TA - Operating Ambient Temperature - °C AV - Voltage Gain - dB 160 04 0 120 302010 RL = 20 kΩ 2 kΩ V - Power Supply Voltage - V (V = GND) AV, φ vs. f AV - Voltage Gain - dB, φ - Phase Margin - deg 140 120 100 V = ±15 V± ±7.5 V ±2.5 V ±15 V ±7.5 V ±2.5 V AV φ f - Frequency - Hz VO vs. f CMR vs. f VO - Output Voltage Signal - Vp-p 1 k 3 5 10 k 30 50 100 k 3005001 M +15 V VO VIN 100 kΩ 1 kΩ +7 V 2 kΩ f - Frequency - Hz CMR - Common Mode Rejection Ratio - dB f - Frequency - Hz 0.1 1 10 100 1 k 10 k 100 k 1 M 100 1 k 10 k 100 k 1 M
μ PC358MF-DAA Chapter Title R03DS0005EJ0100 Rev.1.00 Page 6 of 8 Aug 04, 2010 Pulse Response SR - TA VIN - Input Voltage – V, VO - Output Voltage - V 20 40 60 80 RL 2 kΩ V = +15 V+ t - time - μs SR - Slew Rate - V/ μs -50 0 50 100 V = ±15 V± VO = ±10 V 0.4 0.3 0.2 0.1 SR − SR + TA - Operating Ambient Temperature - °C VO vs. IO SINK ΔVO vs. IO SOURCE VO - Output Voltage - V 0.01 0.1 0.001 0.01 0.1 1 10 100 V = +15 V TA = 85°C −40°C 25°C IO SINK - Output Sink Current - mA ΔVO - Output Voltage to V - V 0.5 1.5 2.5 3.5 4.5 0.01 0.1 1 10 100 TA = 85°C 25°C −40°C V+ = +15 V IO SOURCE - Output Source Current – mA
μ PC358MF-DAA Chapter Title R03DS0005EJ0100 Rev.1.00 Page 7 of 8 Aug 04, 2010 Package Drawings 8-pin Plastic SOP (3.9 × 4.9)
μ PC358MF-DAA Chapter Title R03DS0005EJ0100 Rev.1.00 Page 8 of 8 Aug 04, 2010 Recommended Soldering Conditions The μ PC358MF-DAA should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact our sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www2.renesas.com/pkg/en/mount/index.html) Recommended Soldering Conditions of Surface Mount Device Process Conditions Symbol Infrared ray reflow Peak temperature: 260°C, Reflow time: 60 seconds or less (at 220°C or higher), Maximum number of reflow processes: 3 times. IR60-00-3 Wave soldering Solder temperature: 260°C or below, Flow time: 10 seconds or less, Maximum number of flow processes: 1 time, Pre-heating temperature: 120°C or below (Package surface temperature). WS60-00-1 Partial heating method Pin temperature: 350°C or below, Heat time: 3 seconds or less (Per each side of the device). P350 Caution Apply only one kind of soldering condition to a device, except for “partial heating method”, or the device will be damaged by heat stress. Remark Flux: Rosin flux with low chlorine (0.2 Wt% or below) recommended. Reference Documents
- Quality Grades on NEC Semiconductor Device C11531E
- Semiconductor Device Mount Manual http://w ww2.renesas.com/pkg/en/mount/index.html
- Review of Quality and Reliability Handbook C12769E
- NEC Semiconductor Device Reliability/Quality Control System C10983E
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Description
Rev. Date Page Summary
1.00 Aug 04, 2010 - First Edition issued
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