PC2745TB

PC2745TB_15 RENESAS | Alldatasheet

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DESCRIPTION

The µPC2745TB and µPC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile These ICs are manufactured using our 20 GHz fT NESATIII silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, these IC have excellent performance, uniformity and reliability.

FEATURES

• Supply voltage : Recommended V CC = 2.7 to 3.3 V Circuit operation V CC = 1.8 to 3.3 V  Upper limit operating frequency : µPC2745TB; fu = 2.7 GHz TYP.@3 dB bandwidth µPC2746TB; fu = 1.5 GHz TYP.@3 dB bandwidth  High isolation : µPC2745TB; ISL = 38 dB TYP.@f = 500 MHz µPC2746TB; ISL = 45 dB TYP.@f = 500 MHz  Power gain : µPC2745TB; GP = 12 dB TYP.@f = 500 MHz µPC2746TB; GP = 19 dB TYP.@f = 500 MHz  Saturated output power : µPC2745TB; PO(sat) = −1 dBm TYP.@f = 500 MHz µPC2746TB; PO(sat) = 0 dBm TYP.@f = 500 MHz  High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

APPLICATIONS

 1.5 GHz to 2.5 GHz communication system : µPC2745TB  800 MHz to 900 MHz communication system : µPC2746TB

ORDERING INFORMATION

Part Number Package Marking Supplying Form µPC2745TB-E3 6-pin super minimold C1Q µPC2746TB-E3 C1R  Embossed tape 8 mm wide  1, 2, 3 pins face the perforation side of the tape  Qty 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPC2745TB, µPC2746TB DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.

3 V, SUPER MINIMOLD SILICON MMIC

WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS BIPOLAR ANALOG INTEGRATED CIRCUIT µPC2745TB, µPC2746TB  NEC Compound Semiconductor Devices 1996, 2003 The mark  shows major revised points. Document No. PU10443EJ01V0DS (1st edition) (Previous No. P11511EJ3V0DS00) Date Published November 2003 CP(K) Printed in Japan

Pin No. Pin Name

1 INPUT

2 GND

3 GND

4 OUTPUT

5 GND

6 VCC

PRODUCT LINE-UP (TA = +25°C, VCC = 3.0 V, ZS = ZL = 50 Ω ) Part No. fu (GHz) PO(sat) (dBm) G P (dB) NF (dB) ICC (mA) Package Making µPC2745T 6-pin minimold µPC2745TB 6-pin super minimold C1Q µPC2746T 6-pin minimold µPC2746TB 1.5 0 19 4.0 7.5 6-pin super minimold C1R µPC2747T 6-pin minimold µPC2747TB 6-pin super minimold C1S µPC2748T 6-pin minimold µPC2748TB 6-pin super minimold C1T µPC2749T 6-pin minimold µPC2749TB 6-pin super minimold C1U Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. Caution The package size distinguish between minimold and super minimold. SYSTEM APPLICATION EXAMPLE DIGITAL CELLULAR SYSTEM BLOCK DIAGRAM DEMOD. PSC+PLL TX RX 40˚ I Q SW PA PLL I Q : PC2745TB, PC2746TB applicable µ µ φ C1Q (Top View) (Bottom View) Marking is an example of µPC2745TB Data Sheet PU10443EJ1V0DS 2 µPC2745TB, µPC2746TB

No. Pin Name Applied Voltage (V) Pin Voltage (V) Note Function and Applications Inte rnal Equivalent Circuit 0.87 1 INPUT  0.82 Signal input pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. this pin must be coupled to signal source with capacitor for DC cut. GND 0  Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to decrease impedance difference. 1.95 4 OUTPUT  2.54 Signal output pin. A internal matching circuit, configured with resistors, enables 50 Ω connection over a wide band. This pin must be coupled to next stage with capacitor for DC cut. 6 V CC 2.7 to 3.3  Power supply pin. This pin should be externally equipped with bypass capacity to minimize ground impedance. 3 52 Note Pin voltage is measured at VCC = 3.0 V. Above: µPC2745TB, Below: µPC2746TB Data Sheet PU10443EJ1V0DS 3 µPC2745TB, µPC2746TB

Parameter Symbol Conditions Ratings Unit Supply Voltage V CC T A = +25°C 4.0 V Circuit Current I CC T A = +25°C 16 mA Power Dissipation P D T A = +85°C Note 270 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C Input Power P in T A = +25°C 0 dBm Note Mounted on double-sided copper-clad 50 × 50 × 1.6 mm epoxy glass PWB RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V CC 2.7 3.0 3.3 V

ELECTRICAL CHARACTERISTICS

(TA = +25°C, VCC = 3.0 V, ZS = ZL = 50 Ω , unless otherwise specified) µPC2745TB µPC2746TB Parameter Symbol Test Conditions Unit Power Gain G P f = 500 MHz 9 12 14 16 19 21 dB Noise Figure NF f = 500 MHz  6.0 7.5  4.0 5.5 dB Upper Limit Operating Frequency fu 3 dB down below from gain at f =

0.1 GHz

Isolation ISL f = 500 MHz 33 38  40 45  dB Input Return Loss RL in f = 500 MHz 8 11  10 13  dB Output Return Loss RL out f = 500 MHz 2.5 5.5  5.5 8.5  dB Saturated Output Power P O(sat) f = 500 MHz, Pin = −6 dBm Data Sheet PU10443EJ1V0DS 4 µPC2745TB, µPC2746TB

STANDARD CHARACTERISTICS FOR REFERENCE (T A = +25°C, VCC = 3.0 V, ZS = ZL = 50 Ω ) Reference Value Parameter Symbol Test Conditions µPC2745TB µPC2746TB Unit Circuit Current I CC V CC = 1.8 V, No signal 4.5 4.5 mA Power Gain G P V CC = 3.0 V, f = 1.0 GHz VCC = 3.0 V, f = 2.0 GHz VCC = 1.8 V, f = 0.5 GHz 12.0 11.0 7.0 18.5 14.0 dB Noise Figure NF V CC = 3.0 V, f = 1.0 GHz VCC = 3.0 V, f = 2.0 GHz VCC = 1.8 V, f = 0.5 GHz 5.5 5.7 8.0 4.2 5.0 dB Upper Limit Operating Frequency f u V CC = 1.8 V, 3 dB down below from gain at f = 0.1 GHz 1.8 1.1 GHz Isolation ISL V CC = 3.0 V, f = 1.0 GHz VCC = 3.0 V, f = 2.0 GHz VCC = 1.8 V, f = 0.5 GHz dB Input Return Loss RL in V CC = 3.0 V, f = 1.0 GHz VCC = 3.0 V, f = 2.0 GHz VCC = 1.8 V, f = 0.5 GHz 13.0 14.0 6.5 10.0 10.0 dB Output Return Loss RL out V CC = 3.0 V, f = 1.0 GHz VCC = 3.0 V, f = 2.0 GHz VCC = 1.8 V, f = 0.5 GHz 6.5 8.5 6.0 8.5 9.5 dB Saturated Output Power PO(sat) V CC = 3.0 V, f = 1.0 GHz, Pin = −6 dBm VCC = 3.0 V, f = 2.0 GHz, Pin = −6 dBm VCC = 1.8 V, f = 0.5 GHz, Pin = −10 dBm −2.5 −3.5 −11.0 −1.0 −8.0 dBm 3rd Order Intermodulation Distortion IM 3 V CC = 3.0 V, Pout = −10 dBm, f1 = 500 MHz, f2 = 502 MHz VCC = 1.8 V, Pout = −20 dBm, f1 = 500 MHz, f2 = 502 MHz VCC = 3.0 V, Pout = −10 dBm, f1 = 1 000 MHz, f2 = 1 002 MHz −30.0 −31.0 −26.0 −26.0 −37.0 dBc Data Sheet PU10443EJ1V0DS 5 µPC2745TB, µPC2746TB

50 Ω IN C 1 2, 3, 5 C 3 1 000 pF C 2 1 000 pF 50 Ω OUT VCC 1 000 pF EXAMPLE OF APPLICATION CIRCUIT 50 Ω IN C 1 2, 3, 5 C 3 1 000 pF VCC C 4 1 000 pF C 5 2, 3, 5 C 6 1 000 pF C 2 1 000 pF 50 Ω OUT 1 000 pF1 000 pF R 1 50 to 200 Ω To stabilize operation, please connect R1, C5 The application circuits and their parameters are for references only and are not intended for use in actual design-ins. CAPACITORS FOR THE V CC , INPUT, AND OUTPUT PINS Capacitors of 1 000 pF are recommendable as the bypass capacitor for the VCC pin and the coupling capacitors for the input and output pins. The bypass capacitor connected to the VCC pin is used to minimize ground impedance of VCC pin. So, stable bias can be supplied against VCC fluctuation. The coupling capacitors, connected to the input and output pins, are used to cut the DC and minimize RF serial impedance. Their capacitance are therefore selected as lower impedance against a 50 Ω load. The capacitors thus perform as high pass filters, suppressing low frequencies to DC. To obtain a flat gain from 100 MHz upwards, 1 000 pF capacitors are used in the test circuit. In the case of under 10 MHz operation, increase the value of coupling capacitor such as 10 000 pF. Because the coupling capacitors are determined by equation, fc = 1/(2πRC). Data Sheet PU10443EJ1V0DS 6 µPC2745TB, µPC2746TB

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD IN OUT C VCC Top View AMP-2 CCC1Q 321 456 Mounting direction (Marking is an example for PC2745TB)µ Notes 30 × 30 × 0.4 mm double sided copper clad polyimide board. Back side: GND pattern Solder plated on pattern : Through holes For more information on the use of this IC, refer to the following application note: USAGE AND APPLICATIONS OF 6-PIN MINI-MOLD, 6-PIN SUPER MINI-MOLD SI LICON HIGH-FREQUENCY WIDEBAND AMPLIFIER MMIC (P11976E). COMPONENT LIST Value C 1 000 pF Data Sheet PU10443EJ1V0DS 7 µPC2745TB, µPC2746TB

TYPICAL CHARACTERISTICS (T A = +25°C, unless otherwise specified)  µPC2745TB  012340 –40 CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE Supply Voltage VCC (V) Operating Ambient Temperature T A (°C) –20 0 +20 +40 +60 +80 +100 Circuit Current ICC (mA) CIRCUIT CURRENT vs. SUPPLY VOLTAGE VCC = 3.0 V VCC = 1.8 V –10 0.3 1.0 3.00.1 POWER GAIN vs. FREQUENCY Frequency f (GHz) Frequency f (GHz) Power Gain GP (dB) Power Gain GP (dB) NOISE FIGURE, POWER GAIN vs. FREQUENCY –10 –20 –30 –40 –50 –60 –10 –20 –30 –40 INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Output Return Loss RLout (dB) Isolation ISL (dB) ISOLATION vs. FREQUENCY 0.3 1.0 3.00.1 0.3 1.0 3.00.1 Frequency f (GHz) 0.3 1.0 3.00.1 Frequency f (GHz) Noise Figure NF (dB) VCC = 3.0 V VCC = 3.0 V VCC = 1.8 V RL out RL in VCC = 1.8 V VCC = 1.8 V VCC = 3.0 V VCC = 3.0 V TA = +25°C TA = –40°C TA = +85°C VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V VCC = 1.8 V VCC = 1.8 V VCC = 2.7 V VCC = 3.3 V VCC = 3.0 V G P NF Circuit Current ICC (mA) No signal No signal Remark The graphs indicate nominal characteristics. Data Sheet PU10443EJ1V0DS 8 µPC2745TB, µPC2746TB

 µPC2745TB  –50 +10 –10 –20 –30 –40 +10 –10 –20 –30 –400 OUTPUT POWER vs. INPUT POWER Input Power Pin (dBm) Input Power Pin (dBm) Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER VCC = 3.0 V VCC = 3.3 V VCC = 2.7 V VCC = 1.8 V VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V VCC = 1.8 V VCC = 1.8 V VCC = 2.7 V VCC = 3.0 V VCC = 3.3 V 0.3 1.0 3.00.1 Frequency f (GHz) Output Power of Each Tone P O(each) (dBm) –10 –15 –60 –50 –40 –30 –20 –10 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE 3rd Order Intermodulation Distortion IM3 (dBc) Saturated Output Power PO(sat) (dBm) SATURATED OUTPUT POWER vs. FREQUENCY –5–30 f = 500 MHz –50 +10 –10 –20 –30 –40 +10 –10 –20 –30 –400 OUTPUT POWER vs. INPUT POWER Input Power Pin (dBm) Input Power P in (dBm) Output Power Pout (dBm) Output Power Pout (dBm) OUTPUT POWER vs. INPUT POWER f = 1.0 GHz f = 2.0 GHz f = 500 MHz VCC = 3.0 V TA = +85°C TA = –40°C TA = +25°C TA = +85°C TA = –40°C TA = +25°C –25 –20 –15 –10 VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V VCC = 1.8 V VCC = 3.3 VVCC = 3.0 V VCC = 2.7 V VCC = 1.8 V Pin = –6 dBm f1 = 500 MHz f2 = 502 MHz Remark The graphs indicate nominal characteristics. Data Sheet PU10443EJ1V0DS 9 µPC2745TB, µPC2746TB

SMITH CHART (TA = +25°C, VCC = 3.0 V)  µPC2745TB  S 11-FREQUENCY W AVELENGTHS TOW ARD GENERATOR→ ANGLEOFREFLECTIONCOEFFICIENTINDEGREES 0.49 0.48 0.47 0.46 0.4 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.140.130.120.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.360.370.380.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 8090100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 RESISTANCE COMPONENT R Zo   POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT –JX Zo +JXZo 0.5 G 0.1 G 1.0 G 2.0 G S22-FREQUENCY W AVELENGTHS TOW ARD GENERATOR ANGLEOFREFLECTIONCOEFFICIENTINDEGREES 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.140.130.120.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.360.370.380.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 8090100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 RESISTANCE COMPONENT R Zo   POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT –JX Zo +JX Zo 0.5 G 0.1 G 1.0 G 2.0 G Data Sheet PU10443EJ1V0DS 10 µPC2745TB, µPC2746TB

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ Data Sheet PU10443EJ1V0DS 11 µPC2745TB, µPC2746TB

TYPICAL CHARACTERISTICS (T A = +25°C, unless otherwise specified)  µPC2746TB  0 1234 Supply Voltage V CC (V) CIRCUIT CURRENT vs. SUPPLY VOLTAGECircuit Current ICC (mA) –60 Operating Ambient Temprature T A (˚C) CIRCUIT CURRENT vs. OPERATING AMBIENT TEMPERATURE Circuit Current ICC (mA) VCC = 3.0 V –40 –20 0 +20 +40 +60 +100 0.1 Frequency f (GHz) NOISE FIGURE, POWER GAIN vs. FREQUENCYPower Gain GP (dB) Frequency f (GHz) POWER GAIN vs. FREQUENCY Power Gain GP (dB) 0.3 1.0 3.0

3 Noise Figure NF (dB)

VCC = 3.3 VVCC = 3.0 V VCC = 2.7 V VCC = 1.8 V VCC = 2.7 V to 3.3 V 0.1 0.3 1.0 3.0 VCC = 3.0 V TA = +85°C TA = +25°C TA = –40°C +10 –20 –40 –60 –80 0.1 Frequency f (GHz) ISOLATION vs. FREQUENCY Isolation ISL (dB) +10 –10 –20 –30 Frequency f (GHz) INPUT RETURN LOSS, OUTPUT RETURN LOSS vs. FREQUENCY Input Return Loss RLin (dB) Output Return Loss RLout (dB) VCC = 1.8 V VCC = 3.0 V RL out RL in VCC = 1.8 V VCC = 3.0 V VCC = 1.8 V +80 VCC = 1.8 V VCC = 3.0 V No signal No signal VCC = 1.8 V Remark The graphs indicate nominal characteristics. Data Sheet PU10443EJ1V0DS 12 µPC2745TB, µPC2746TB

 µPC2746TB  +10 –10 –20 –30 –40–50 Input Power P in (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) +10 –10 –15 0.1 Frequency f (GHz) SATURATED OUTPUT POWER vs. FREQUENCY Saturated Output Power PO(sat) (dBm) –60 –50 –40 –30 –20 –10 Output Power of Each Tone P O(each) (dBm) 3RD ORDER INTERMODULATION DISTORTION vs. OUTPUT POWER OF EACH TONE –30 –40 –30 –20 –10 0 f = 500 MHz VCC = 3.3 V +10 –10 –20 –30 –40–50 Input Power P in (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) –40 –30 –20 –10 0 f = 1.0 GHz VCC = 3.3 V VCC = 2.7 V +10 –10 –20 –30 –40–50 Input Power P in (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) –40 –30 –20 –10 0 f = 500 MHz VCC = 3.0 V TA = +85°C +10 –10 –20 –30 –40–50 Input Power P in (dBm) OUTPUT POWER vs. INPUT POWER Output Power Pout (dBm) –40 –30 –20 –10 TA = +85°CTA = –40°C TA = +25°C TA = –40°C TA = +25°C f = 1.0 GHz VCC = 3.0 V 0.3 1.0 3.0 VCC = 3.3 V VCC = 2.7 V VCC = 1.8 V VCC = 2.7 to 3.3 V P in = –6 dBm VCC = 1.8 V Pin = –10 dBm 3rd Order Intermodulation Distortion IM3 (dBc) f1 = 500 MHz f2 = 502 MHz VCC = 3.0 V VCC = 1.8 V TA = –40°C TA = +25°C TA = +85°C TA = +85°C VCC = 1.8 V VCC = 2.7 V VCC = 3.0 V VCC = 3.3 V VCC = 3.0 V TA = –40°C TA = +25°C VCC = 3.0 V VCC = 2.7 V VCC = 1.8 V Remark The graphs indicate nominal characteristics. Data Sheet PU10443EJ1V0DS 13 µPC2745TB, µPC2746TB

SMITH CHART (TA = +25°C, VCC = 3.0 V)  µPC2746TB  S11-FREQUENCY W AVELENGTHS TOW ARD GENERATOR ANGLEOFREFLECTIONCOEFFICIENTINDEGREES 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.140.130.120.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.360.370.380.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 8090100 110 120 130 140 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 RESISTANCE COMPONENT R Zo   POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT –JX Zo +JXZo 0.5 G 0.1 G 1.0 G 1.5 G S22-FREQUENCY W AVELENGTHS TOW ARD GENERATOR ANGLEOFREFLECTIONCOEFFICIENTINDEGREES 0.49 0.48 0.47 0.46 0.45 0.44 0.43 0.42 0.41 0.40 0.39 0.38 0.37 0.36 0.35 0.34 0.33 0.32 0.31 0.30 0.29 0.28 0.27 0.26 0.25 0.24 0.23 0.22 0.21 0.20 0.19 0.18 0.17 0.16 0.15 0.140.130.120.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.01 0.02 0.03. 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.11 0.12 0.13 0.14 0.15 0.16 0.17 0.18 0.19 0.20 0.21 0.22 0.23 0.24 0.25 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.33 0.34 0.35 0.360.370.380.39 0.40 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 0.49 -160 -150 -140 -130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 8090100 110 120 130 140 150 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 RESISTANCE COMPONENT R Zo   POSITIVEREACTANCECOMPONENT NEGATIVEREACTANCECOMPONENT –JX Zo +JXZo 0.5 G 0.1 G 1.0 G 1.5 G Data Sheet PU10443EJ1V0DS 14 µPC2745TB, µPC2746TB

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ Data Sheet PU10443EJ1V0DS 15 µPC2745TB, µPC2746TB

6-PIN SUPER MINIMOLD (UNIT: mm) 0.9±0.1 0.7 0 to 0.1 0.15+0.1 –0.05 0.2+0.1 –0.05 2.0±0.2 1.3 0.650.65 1.25±0.1 2.1±0.1 0.1 MIN. Data Sheet PU10443EJ1V0DS 16 µPC2745TB, µPC2746TB

(1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). All the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) The bypass capacitor should be attached to the VCC pin. (4) The DC cut capacitor must be attached to input pin and output pin. RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Soldering Conditions Condition Symbol Infrared Reflow Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120 ±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below IR260 VPS Peak temperature (package surface temperature) : 215 °C or below Time at temperature of 200°C or higher : 25 to 40 seconds Preheating time at 120 to 150°C : 30 to 60 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below VP215 Wave Soldering Peak temperature (molten solder temperature) : 260 °C or below Time at peak temperature : 10 seconds or less Preheating temperature (package surface temperature) : 120°C or below Maximum number of flow processes : 1 time Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below WS260 Partial Heating Peak temperature (pin temperature) : 350 °C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below HS350 Caution Do not use different soldering methods together (except for partial heating). Data Sheet PU10443EJ1V0DS 17 µPC2745TB, µPC2746TB

M8E 00. 4 - 0110 The information in this document is current as of November, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10443EJ1V0DS 18 µPC2745TB, µPC2746TB

NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0310 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) 5th Sales Group, Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPC2745TB, µPC2746TB