1N1199A_07 DIOTEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 Dimensions - Maße [mm] Nominal Current Nennstrom 12 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 ... 1000 V Metal case Metallgehäuse DO-4 Weight approx. – Gewicht ca. 5.5 g Standard polarity: Cathode to stud / Kathode am Gewinde Index R: Anode to stud / Anode am Gewinde (e. g. 1N1199AR) Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type Typ Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1N1199A = PBY271 50 60 1N1200A = PBY272 100 120 1N1202A = PBY273 200 240 1N1204A = PBY274 400 480 1N1206A = PBY275 600 720 1N3671 = PBY276 800 1000 1N3673 = PBY277 1000 1200 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 85°C IFAV 12 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 40 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 200/240 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 240 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -65...+175°C -65...+175°C 1 Max. case temperature TC = 85°C – Max. Gehäusetemperatur TC = 85°C © Diotec Semiconductor AG http://www.diotec.com/ 1 10 10 Type SW11
Forward Voltage – Durchlass-Spannung Tj = 25°C IF = 30 A VF < 1.5 V Leakage Current – Sperrstrom Tj = 25°C VR = VRRM IR < 100 µA Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse RthC < 2 K/W Recommended mounting torque Empfohlenes Anzugsdrehmoment 10-20 UNF M 5 18 ± 10% lb.in. 2 ± 10% Nm © Diotec Semiconductor AG http://www.diotec.com/ 2 120 100 [%] IFAV Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. [°C]TC 150100500 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) IF [A] T = 25°Cj T = 125°Cj 220a-(30a-1,5v) Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz [A] îF 1 10 10 [n] 102 3