PBSS3540F PHILIPS | Alldatasheet

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Product specification 2001 Jul 13 DISCRETE SEMICONDUCTORS PBSS3540F

40 V low VCEsat PNP transistor

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Philips Semiconductors Product specification

40 V low VCEsat PNP transistor PBSS3540F

FEATURES

  • Low collector-emitter saturation voltage
  • High current capability
  • Improved thermal behaviour due to flat leads
  • Enhanced performance over SOT23 general purpose transistors.

APPLICATIONS

  • General purpose switching and muting
  • Low frequency driver circuits
  • Audio frequency general purpose applications
  • Battery driven equipment (mobile phones, video cameras, hand-held devices).

DESCRIPTION

PNP low VCEsat transistor in a SC-89 (SOT490) plastic package. NPN complement: PBSS2540F. MARKING TYPE NUMBER MARKING CODE PBSS3540F 2D PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector handbook, halfpage MAM411 Top view Fig.1 Simplified outline (SC-89; SOT490) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage−40 V ICM peak collector current −1A R CEsat equivalent on-resistance <700 mΩ LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter −− 40 V VCEO collector-emitter voltage open base −− 40 V VEBO emitter-base voltage open collector −− 6V IC collector current (DC) −− 500 mA ICM peak collector current −− 1A IBM peak base current −− 100 mA Ptot total power dissipation T amb ≤ 25 °C − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C

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Philips Semiconductors Product specification Tamb =2 5°C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 ms;δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to ambient in free air 500 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = −40 V; IE =0 −−− 100 nA VCB = −40 V; IE = 0; Tj= 150°C −−− 50 µA IBEO emitter-base cut-off current VEB = −5 V; IC =0 −−− 100 nA hFE DC current gain V CE = −2V IC = −10 mA 200 −− IC = −100 mA; note 1 150 −− IC = −500 mA; note 1 40 −− VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA −−− 50 mV IC = −100 mA; IB = −5m A −−− 130 mV IC = −200 mA; IB = −10 mA −−− 200 mV IC = −500 A; IB = −50 mA; note 1 −−− 350 mV R CEsat equivalent on-resistance I C = −500 mA; IB = −50 mA; note 1− 440 <700 m Ω VBEsat base-emitter saturation voltage IC = −500 mA; IB = −50 mA; note 1−−− 1.2 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −100 mA; note 1 −−− 1.1 V C c collector capacitance V CB = −10 V; IE =Ie = 0; f = 1 MHz−− 10 pF fT transition frequency I C = −100 mA; VCE = −5V ; f = 100 MHz 100 300 − MHz

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Philips Semiconductors Product specification UNIT b p cD E e1 H E Lp wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE 98-10-23 IEC JEDEC EIAJ mm 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 0.5 e 1.0 1.7 1.5 0.10.1 DIMENSIONS (mm are the original dimensions) 0.5 0.3 SOT490 SC-89 bp D e A Lp detail X H E E w M v M A B AB 0 1 2 mm scale A 0.8 0.6 c X Plastic surface mounted package; 3 leads SOT490

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Philips Semiconductors Product specification

  1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

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Philips Semiconductors Product specification

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Philips Semiconductors Product specification

© Philips Electronics N.V. SCA All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Internet: http://www.semiconductors.philips.com 2001 72 Philips Semiconductors – a worldwide company For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria:Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil:see South America Bulgaria:Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

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