PBSS3515E PHILIPS | Alldatasheet
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1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. NPN complement: PBSS2515E.
1.2 Features
■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability: IC and ICM ■ High collector current gain (hFE ) at high IC ■ High efficiency due to less heat generation ■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
■ DC-to-DC conversion ■ MOSFET gate driving ■ Motor control ■ Charging circuits ■ Low power switches (e.g. motors, fans) ■ Portable applications
1.4 Quick reference data
[1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 01 — 18 April 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −15 V IC collector current (DC) - - −0.5 A ICM peak collector current single pulse; tp ≤ 1m s -- −1A R CEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] - 300 500 m Ω
9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 2 of 11 Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. Table 2: Pinning Pin Description Simplified outline Symbol 1 base 2 emitter 3 collector sym013 Table 3: Ordering information Type number Package Name Description Version PBSS3515E SC-75 plastic surface mounted package; 3 leads SOT416 Table 4: Marking codes Type number Marking code PBSS3515E 1R Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −15 V VCEO collector-emitter voltage open base - −15 V VEBO emitter-base voltage open collector - −6V IC collector current (DC) - −0.5 A ICM peak collector current single pulse; tp ≤ 1m s - −1A IBM peak base current single pulse; tp ≤ 1m s - −100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 150 mW [2] - 250 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C
9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 3 of 11 Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. (1) FR4 PCB, mounting pad for collector 1 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves Tamb (°C) 0 160 12040 80 006aaa412 100 200 300 P tot (mW) (1) (2) Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [1] - - 833 K/W [2] - - 500 K/W
9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 4 of 11 Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 7. Characteristics [1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. FR4 PCB, mounting pad for collector 1 cm2 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa413 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 102 103 0.1 0.05 0.02 0.01 Zth(j-a) (K/W) duty cycle = 0.750.5 0.33 0.2 Table 7: Characteristics Tamb = 25°C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −15 V; IE =0A - - −100 nA VCB = −15 V; IE =0A ; Tj= 150°C -- −50 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −100 nA hFE DC current gain V CE = −2 V; IC = −10 mA 200 - - VCE = −2 V; IC = −100 mA [1] 150 - - VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - - −25 mV IC = −200 mA; IB = −10 mA - - −150 mV IC = −500 mA; IB = −50 mA [1] -- −250 mV R CEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] - 300 500 m Ω VBEsat base-emitter saturation voltage VBEon base-emitter turn-on voltage fT transition frequency VCE = −5 V; IC = −100 mA; f = 100 MHz 100 280 - MHz C c collector capacitance VCB = −10 V; IE =ie =0A ; f=1M H z --1 0 p F
9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 5 of 11 Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor VCE = −2V (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C VCE = −2V (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 3. DC current gain as a function of collector current; typical values Fig 4. Base-emitter voltage as a function of collector current; typical values IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa372 IC (mA) 200 400 600 h FE (2) (1) (3) 006aaa373 -500 -700 -300 -900 -1100 VBE (mV) -100 IC (mA) (2) (1) (3) 006aaa374 -10-1 -10-2 VCEsat (mV) -10-3 IC (mA) (1) (2) (3) 006aaa375 -10-1 -10-2 VCEsat (mV) -10-3 IC (mA) (2) (1) (3)
9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 6 of 11 Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor IC /IB =2 0 (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 7. Base-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation resistance as a function of collector current; typical values Tamb =2 5°CT amb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 9. Collector current as a function of collector-emitter voltage; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa376 IC (mA) -0.5 -0.9 -1.3 VBEsat (V) -0.1 (2) (1) (3) 006aaa377 102 R CEsat (W ) 10-1 IC (mA) (1) (2) (3) VCE (V) 0 -5-4-2 -3-1 006aaa378 -0.4 -0.8 -1.2 IC (A) IB = 10 mA 006aaa379 IC (mA) 102 103 R CEsat (W ) 10-1 (1) (2) (3)
9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 7 of 11 Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 8. Package outline 9. Packing information [1] For further information and the availability of packing methods, seeSection15. Fig 11. Package outline SOT416 (SC-75) 04-11-04Dimensions in mm 0.95 0.60 1.8 1.4 1.75 1.45 0.9 0.7 0.25 0.10 0.30 0.15 3 0.45 0.15 Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PBSS3515E SOT416 4 mm pitch, 8 mm tape and reel -115 -135
9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 8 of 11 Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 10. Soldering Dimensions in mm Fig 12. Reflow soldering footprint Dimensions in mm Fig 13. Wave soldering footprint MSA438 2.00 0.60 (3x) 0.70 1.50 1.10 2.20 0.50 (3x) 0.85 0.60 1.90 solder lands solder resist occupied area solder paste MSA418 3.30 3.80 1.502.85 0.70 2.10 0.80 preferred transport direction during soldering solder lands solder resist occupied area
9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 9 of 11 Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 11. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS3515E_1 20050418 Product data sheet - 9397 750 14878 -
Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 9397 750 14878 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 10 of 11 12. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 14. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 18 April 2005 Document number: 9397 750 14878 Published in The Netherlands Philips Semiconductors PBSS3515E 15 V, 0.5 A PNP low VCEsat (BISS) transistor 16. Contents