PBSS306PX_15 KEXIN | Alldatasheet

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www.kexin.com.cn 1 Tran sistors PNP Transistors PBSS306PX (KBSS306PX) ■ Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Complement to PBSS306NX. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -100 Collector - Emitter Voltage VCEO -100 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -3.7 Collector Current - Pulse @ tp ≤ 1 ms ICP -7.4 (Note.1) 0.6 Collector Power Dissipation (Note.2) 1.65 (Note.3) 2.1 (Note.1) 208 Thermal Resistance from Junction to Ambient (Note.2) 76 (Note.3) 60 Thermal Resistance from Junction to Solder Point RθSP 20 Junction Temperature TJ 150 Storage Temperature range Tstg -65 to 150 V PC W A RθJA ℃/W Note.1: Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Note.2: Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Note.3: Device mounted on a ceramic PCB, Al2O3, standard footprint. C E B

www.kexin.com.cn2 Transistors PNP Transistors PBSS306PX (KBSS306PX) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -100 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -100 Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 -5 VCB= -80 V , IE=0 -100 nA VCB= -80 V , IE=0 ,TJ= 150℃ -50 uA Emitter cut-off current IEBO VEB= -5V , IC=0 -100 nA IC=-500 mA, IB=-50mA -60 IC=-1 A, IB=-50mA -130 IC=-4 A, IB=-400mA -300 IC=-1 A, IB=-100mA -0.9 IC=-4 A, IB=-400mA -1.05 Base-emitter turn-on voltage (Note.1) VBE(on) VCE= -2V, IC= -2 A -0.85 Collector-emitter saturation resistance RCEsat IC=-4 A, IB=-400mA (Note.1) 75 mΩ VCE= -2V, IC= -500mA 200 VCE= -2V, IC= -1A 150 VCE= -2V, IC= -2A 100 VCE= -2V, IC= -4A 25 DelayTime td 15 Rise Time tr 185 Turn-On Time ton 200 Storage Time ts 150 Fall time tf 175 Turn-off time toff 325 Collector capacitance Cc VCB= -10V, IE=ie=0,f=1MHz 80 pF Transition frequency fT VCE= -10V, IC= -100mA,f=100MHz 100 MHz DC current gain (Note.1) hFE V Collector-base cut-off current ICBO Collector-emitter saturation voltage (Note.1) VCE(sat) Base - emitter saturation voltage (Note.1) VBE(sat) VCC = −12.5V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A ns mV V Note.1: Pulse test: tp ≤ 300 us; δ ≤ 0.02. ■ Marking Marking *5N

www.kexin.com.cn 3 Tran sistors PNP Transistors PBSS306PX (KBSS306PX) ■ Typical Characterisitics (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves Tamb ( °C) − 57157 12525 75−25 1.0 0.5 1.5 2.0 2.5 P tot (W) (3) (2) (1) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa557 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.20 0.10 102 103 Zth(j-a) (K/W) 0.05 0.02 0.01 δ = 1 0.75 0.50 0.33

www.kexin.com.cn4 Tran sistors PNP Transistors PBSS306PX (KBSS306PX) ■ Typical Characterisitics FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.01 0.05 0.10 0.20 0.33 δ = 1 0.02 102 Zth(j-a) (K/W) 10−1 0.75 0.50 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.33 0.10 0.01 0.02 102 Zth(j-a) (K/W) 10−1 0.05 δ = 1 0.75 0.50 0.20 VCE = −2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Collector current as a function of collector-emitter voltage; typical values 200 400 600 hFE IC (mA) (3) (2) (1) VCE (V) −10 −12 −14 IC (A) −145 IB (mA) = −1015 −290 −870 −725 −580 −435

www.kexin.com.cn 5 Transistors PNP Transistors PBSS306PX (KBSS306PX) ■ Typical Characterisitics VCE = −2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values −0.4 −0.8 −1.2 VBE (V) IC (mA) (3) (2) (1) −0.4 −0.8 −1.2 VBEsat (V) IC (mA) (3) (2) (1) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values −10−1 −10 VCEsat (V) −10−2 IC (mA) (3) (2) (1) −10−1 −10 VCEsat (V) −10−2 IC (mA) (3) (2) (1) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values IC (mA) 10−1 102 103 RCEsat (Ω) 10−2 (3) (2) (1) IC (mA) 10−1 102 103 RCEsat (Ω) 10−2 (3) (2) (1)

www.kexin.com.cn6 Transistors PNP Transistors PBSS306PX (KBSS306PX) ■ Typical Characterisitics Fig 13. BISS transistor switching time definition VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A Fig 14. Test circuit for switching times −IBon (100 %) −IB input pulse (idealized waveform) −IBoff 90 % 10 % −IC (100 %) −IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff R C DUT V o R B (probe) 450 Ω (probe) 450 Ωoscilloscope oscilloscope V BB V I V CC