PBSS306NX_15 KEXIN | Alldatasheet

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www.kexin.com.cn 1 Tran sistors NPN Transistors PBSS306NX (KBSS306NX) ■ Features

  • Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain (hFE) at high IC
  • High efficiency due to less heat generation
  • Complement to PBSS306PX. 1.Base 2.Collector 3.Emitter 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 100 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 4.5 Collector Current - Pulse @ tp ≤ 1 ms ICP 9 (Note.1) 0.6 Collector Power Dissipation (Note.2) 1.65 (Note.3) 2.1 (Note.1) 208 Thermal Resistance from Junction to Ambient (Note.2) 76 (Note.3) 60 Thermal Resistance from Junction to Solder Point RθSP 20 Junction Temperature TJ 150 Storage Temperature range Tstg -65 to 150 V PC W A RθJA ℃/W Note.1: Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Note.2: Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Note.3: Device mounted on a ceramic PCB, Al2O3, standard footprint. E C B

www.kexin.com.cn2 Transistors NPN Transistors PBSS306NX (KBSS306NX) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 μA， IE=0 100 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB=0 100 Emitter - base breakdown voltage VEBO IE= 100μA， IC=0 5 VCB= 80 V , IE=0 100 nA VCB= 80 V , IE=0 ,TJ= 150℃ 50 uA Emitter cut-off current IEBO VEB= 5V , IC=0 100 nA IC=500 mA, IB=50mA 40 IC=1 A, IB=50mA 75 IC=1 A, IB=10mA 150 IC=2 A, IB=40mA 160 IC=4 A, IB=200mA 225 IC=4 A, IB=400mA 200 IC=4.5 A, IB=225mA 245 IC=1 A, IB=100mA 0.9 IC=-4 A, IB=-400mA 1.05 Base-emitter turn-on voltage (Note.1) VBE(on) VCE= 2V, IC= 2 A 0.85 Collector-emitter saturation resistance RCEsat IC=4 A, IB=200mA (Note.1) 56 mΩ VCE= 2V, IC= 500mA 200 VCE= 2V, IC= 1A 150 VCE= 2V, IC= 2A 100 VCE= 2V, IC= 4A 50 VCE= 2V, IC= 5A 40 DelayTime td 15 Rise Time tr 315 Turn-On Time ton 330 Storage Time ts 240 Fall time tf 290 Turn-off time toff 530 Collector capacitance Cc VCB= 10V, IE=ie=0,f=1MHz 40 pF Transition frequency fT VCE= 10V, IC= 100mA,f=100MHz 110 MHz DC current gain (Note.1) hFE V Collector-base cut-off current ICBO Collector-emitter saturation voltage (Note.1) VCE(sat) Base - emitter saturation voltage (Note.1) VBE(sat) VCC = 12.5V; IC =3 A; IBon = 0.15 A; IBoff = -0.15 A ns mV V Note.1: Pulse test: tp ≤ 300 us; δ ≤ 0.02. ■ Marking Marking *5G

www.kexin.com.cn 3 Tran sistors NPN Transistors PBSS306NX (KBSS306NX) ■ Typical Characterisitics (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves Tamb (°C) − 57157 12525 75−25 1.0 0.5 1.5 2.0 2.5 Ptot (W) (3) (2) (1) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.20 0.10 102 103 Zth(j-a) (K/W) 0.05 0.02 0.01 δ = 1 0.75 0.50 0.33

www.kexin.com.cn4 Tran sistors NPN Transistors PBSS306NX (KBSS306NX) ■ Typical Characterisitics FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Ceramic PCB, Al2O3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.01 0.05 0.10 0.20 0.33 δ = 1 0.02 102 Zth(j-a) (K/W) 10−1 0.75 0.50 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.33 0.10 0.01 0.02 102 Zth(j-a) (K/W) 10−1 0.05 δ = 1 0.75 0.50 0.20 VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Collector current as a function of collector-emitter voltage; typical values 200 400 600 hFE IC (mA) 10−1 1041031 10210 (3) (2) (1) VCE (V) 50 42 31 IC (A) IB (mA) = 500 200 150 100 450 350 250 400 300

www.kexin.com.cn 5 Transistors NPN Transistors PBSS306NX (KBSS306NX) ■ Typical Characterisitics VCE = 2 V (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values 0.4 0.8 1.2 V BE (V) IC (mA) 10−1 1041031 10210 (3) (2) (1) 0.4 0.8 1.2 V BEsat (V) IC (mA) 10−1 1041031 10210 (3) (2) (1) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb = 25 °C (1) IC/IB = 100 (2) IC/IB = 50 (3) IC/IB = 10 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values IC (mA) 10−1 1041031 10210 10−1 VCEsat (V) 10−2 (3) (2) (1) IC (mA) 10−1 1041031 10210 10−2 10−1 VCEsat (V) 10−3 (3) (2) (1) IC (mA) 10−1 1041031 10210 10−1 102 103 RCEsat (Ω) 10−2 (3) (2) (1) IC (mA) 10−1 1041031 10210 10−1 102 103 RCEsat (Ω) 10−2 (3) (2) (1)

www.kexin.com.cn6 Transistors NPN Transistors PBSS306NX (KBSS306NX) ■ Typical Characterisitics Fig 13. BISS transistor switching time definition VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff = −0.15 A Fig 14. Test circuit for switching times IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff RC DUT Vo RB (probe) 450 Ω (probe) 450 Ωoscilloscope oscilloscope VBB VI VCC