PBSS305PZ

PBSS305PZ PHILIPS | Alldatasheet

Document overview

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Technical content

1.1 General description

small Surface-Mounted Device (SMD) plastic package.

1.2 Features

1.3 Applications

1.4 Quick reference data

Table 1. Quick reference data

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Table 2. Pinning Table 3. Ordering information Table 4. Marking codes

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O 3, standard footprint. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O 3, standard footprint. Table 6. Thermal characteristics

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 5 of 14 Philips Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values Ceramic PCB, Al2O 3, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa562 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 0.20 d = 1 0.1010 102 Zth(j-a) (K/W) 10-1 0.05 0.01 0.02 0.75 0.50 0.33 006aaa563 10-5 1010-210-4 10210-1 tp (s) 10-3 1031 0.10 102 Zth(j-a) (K/W) 10-1 0.05 0.02 0.01 d = 1 0.75 0.50 0.33 0.20

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Table 7. Characteristics Tamb =2 5°C unless otherwise specified.

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 7 of 14 Philips Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor VCE = −2V (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Collector current as a function of collector-emitter voltage; typical values VCE = −2V (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C IC /IB =2 0 (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 7. Base-emitter voltage as a function of collector current; typical values Fig 8. Base-emitter saturation voltage as a function of collector current; typical values 006aaa629 200 400 600 h FE IC (mA) (3) (2) (1) 006aaa635 VCE (V) 0 -5-4-2 -3-1 -10 -12 -14 IC (A) IB (mA) = -600 -120 -60 -240 -180 -540 -480 -420 -360 -300 006aaa630 -0.4 -0.8 -1.2 VBE (V) IC (mA) (3) (2) (1) 006aaa633 -0.4 -0.8 -1.2 VBEsat (V) IC (mA) (3) (2) (1)

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 8 of 14 Philips Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values 006aaa631 -10-1 -10 VCEsat (V) -10-2 IC (mA) (3) (2) (1) 006aaa632 IC (mA) -10-2 -10-1 -10 VCEsat (V) -10-3 (3) (2) (1) 006aaa634 IC (mA) 10-1 102 103 R CEsat (W ) 10-2 (3) (2) (1) 006aaa636 IC (mA) 10-1 102 103 R CEsat (W ) 10-2 (3) (2) (1)

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 9 of 14 Philips Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor 8. Test information Fig 13. BISS transistor switching time definition VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff= 0.15 A Fig 14. Test circuit for switching times 006aaa266 −IBon (100 %) −IB input pulse (idealized waveform) −IBoff 90 % 10 % −IC (100 %) −IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff R C DUT mgd624 Vo R B (probe) 450 W (probe)

450 Woscilloscope oscilloscope

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. [1] For further information and the availability of packing methods, seeSection14. Table 8. Packing methods

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 11 of 14 Philips Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor 11. Soldering Fig 16. Reflow soldering footprint Fig 17. Wave soldering footprint sot223_frsolder resist occupied areasolder lands solder paste Dimensions in mm 1.20 (4 ·) 3.90 5.90 4.807.40 231 3.85 1.20 (3 ·) 1.30 (3 ·) 0.30 3.60 3.50 7.00 6.15 7.65 sot223_fwsolder resistoccupied areasolder lands Dimensions in mm transport direction during soldering 6.70 8.90 1.90 (2·) 1.10 7.30 4.30 8.10 8.70 12 3

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Table 9. Revision history

PBSS305PZ_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 20 September 2006 13 of 14 Philips Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor 13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com.

13.2 Definitions

Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

13.3 Disclaimers

General — Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

13.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

Philips Semiconductors PBSS305PZ 80 V, 4.5 A PNP low VCEsat (BISS) transistor © Koninklijke Philips Electronics N.V. 2006. All rights reserved. For more information, please visit: http://www.semiconductors.philips.com. Date of release: 20 September 2006 Document identifier: PBSS305PZ_1 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 15. Contents