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Product proﬁle

1.1 General description

PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a SOT457 (SC-74) SMD plastic package. NPN complement: PBSS302ND

1.2 Features

■ Ultra low collector-emitter saturation voltage VCEsat ■ 4 A continuous collector current capability IC (DC) ■ Up to 15 A peak current ■ Very low collector-emitter saturation resistance ■ High efﬁciency due to less heat generation

1.3 Applications

■ Power management functions ■ Charging circuits ■ DC-to-DC conversion ■ MOSFET gate driving ■ Power switches (e.g. motors, fans) ■ Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O 3, standard footprint. [2] Pulse test: tp ≤ 300 µs;δ≤ 0.02. PBSS302PD

40 V PNP low VCEsat (BISS) transistor

Rev. 01 — 18 April 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −40 V IC collector current (DC) [1] -- −4A ICM peak collector current t = 1 ms or limited by Tj(max) -- −15 A R CEsat collector-emitter saturation resistance IC =−6 A; IB = −600 mA [2] - 5 57 5m Ω

Pinning information 3. Ordering information 4. Marking 5. Limiting values Table 2: Pinning Pin Description Simpliﬁed outline Symbol 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector 13 2 456 1, 2, 5, 6 sym030 Table 3: Ordering information Type number Package Name Description Version PBSS302PD SC-74 plastic surface mounted package; 6 leads SOT457 Table 4: Marking codes Type number Marking code PBSS302PD C9 Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −5V IC collector current (DC) [1] - −4A ICM peak collector current t = 1 ms or limited by Tj(max) - −15 A IB base current (DC) - −0.8 A IBM peak base current t p ≤ 300 µs- −2A Ptot total power dissipation Tamb ≤ 25°C [2] - 360 mW [3] - 600 mW [4] - 750 mW [1] - 1.1 W [2][5] - 2.5 W

9397 750 14513 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 3 of 15 Philips Semiconductors PBSS302PD [1] Device mounted on a ceramic PCB, AL2O 3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Operated under pulsed conditions: Duty cycleδ≤ 10 % and pulse width tp ≤ 10 ms. Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C (1) Ceramic PCB, AL2O 3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, mounting pad for collector 1 cm2 (4) FR4 PCB, standard footprint Fig 1. Power derating curves Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit (1) Tamb (°C) −75 175 12525 75−25 006aaa270 800 400 1200 1600 Ptot (mW) (2) (4) (3)

Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on a ceramic PCB, AL2O 3, standard footprint. [5] Operated under pulsed conditions: Duty cycleδ≤ 10 % and pulse width tp ≤ 10 ms. Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [1] - - 350 K/W [2] - - 208 K/W [3] - - 160 K/W [4] - - 113 K/W [1][5] --5 0 K / W R th(j-sp) thermal resistance from junction to solder point --4 5 K / W FR4 PCB, standard footprint (1) δ =1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ =0 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa271 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 (3) (4) (5) (6) (7) (8) (9) (10) (1) (2)

9397 750 14513 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 5 of 15 Philips Semiconductors PBSS302PD FR4 PCB, mounting pad for collector 1 cm2 (1) δ =1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ =0 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa272 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 (2) (1) (5) (6) (7) (8) (9) (10) (3) (4)

9397 750 14513 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 6 of 15 Philips Semiconductors PBSS302PD FR4 PCB, mounting pad for collector 6 cm2 (1) δ =1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ =0 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa273 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10)

Characteristics [1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. Table 7: Characteristics Tamb = 25°C unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB =−30 V; IE = 0 A - - −0.1 µA VCB =−30 V; IE = 0 A; Tj= 150°C- - −50 µA ICES collector-emitter cut-off current VCE =−30 V; VBE = 0 V - - −0.1 µA IEBO emitter-base cut-off current VEB =−5 V; IC = 0 A - - −0.1 µA hFE DC current gain V CE =−2 V; IC =−0.5 A 200 - - VCEsat collector-emitter saturation voltage IC =−0.5 A; IB =−50 mA - −46 −60 mV IC =−1 A; IB =−50 mA - −70 −110 mV IC =−2 A; IB =−200 mA - −120 −180 mV IC =−4 A; IB =−400 mA [1] - −220 −300 mV IC =−6 A; IB =−600 mA [1] - −320 −450 mV R CEsat collector-emitter saturation resistance IC =−6 A; IB =−600 mA [1] - 5 57 5m Ω VBEsat base-emitter saturation voltage VBEon base-emitter turn-on voltage td delay time V CC =−10 V; IC =−2 A; IBon = −0.1 A; IBoff= 0.1 A -1 2 -n s tr rise time - 43 - ns ton turn-on time - 55 - ns ts storage time - 241 - ns tf fall time - 80 - ns toff turn-off time - 321 - ns fT transition frequency VCE =−10 V; IC =−0.1 A; f = 100 MHz - 110 - MHz C c collector capacitance VCB =−10 V; IE = ie = 0 A; f=1M H z -5 0 -p F

9397 750 14513 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 8 of 15 Philips Semiconductors PBSS302PD VCE = −2V (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C VCE = −2V (1) Tamb =2 5°C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Base-emitter voltage as a function of collector current; typical values IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values IC (mA) 006aaa282 200 400 600 h FE (1) (2) (3) IC (mA) 006aaa283 -0.8 -0.4 -1.2 -1.6 VBE (V) 006aaa284 -10-1 -10-2 VCEsat (V) -10-3 IC (mA) (1) (2) (3) -10-1 -10-2 VCEsat (V) -10-3 006aaa285 IC (mA) (1) (2) (3)

9397 750 14513 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 9 of 15 Philips Semiconductors PBSS302PD IC /IB =2 0 (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 9. Base-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values IC (mA) 006aaa287 -0.5 -0.9 -1.3 VBEsat (V) -0.1 (1) (2) (3) IC (A) 006aaa327 10−1 102 103 R CEsat (Ω ) 10−2 (2) (1) (3)

9397 750 14513 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 10 of 15 Philips Semiconductors PBSS302PD Tamb =2 5°C (1) IB = −400 mA (2) IB = −360 mA (3) IB = −320 mA (4) IB = −280 mA (5) IB = −240 mA (6) IB = −200 mA (7) IB = −160 mA (8) IB = −120 mA (9) IB = −80 mA (10) IB = −40 mA IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 11. Collector current as a function of collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values VCE (V) 006aaa288 -12 IC (A) (1) (3) (5) (6) (8) (9) (10) (7) (2) (4) 006aaa289 IC (mA) 10-1 102 R CEsat (W ) 10-2 (1) (2) (3)

Test information Fig 13. BISS transistor switching time deﬁnition (1) VCC =−10 V; IC =−2 A; IBon = −0.1 A; IBoff= 0.1 A Fig 14. Test circuit for switching times 006aaa266 −IBon (100 %) −IB input pulse (idealized waveform) −IBoff 90 % 10 % −IC (100 %) −IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff R C DUT mgd624 Vo R B (probe) 450 W (probe)

450 Woscilloscope oscilloscope

Package outline 10. Packing information [1] For further information and the availability of packing methods, seeSection15. [2] T1: normal taping [3] T2: reverse taping Fig 15. Package outline SOT457 (SC-74) 04-11-08Dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.250.95 1.1 0.9 0.6 0.2 13 2 456 Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 5000 10000 PBSS302PD SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - -135 4 mm pitch, 8 mm tape and reel; T2[3] -125 - -165

Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS302PD_1 20050418 Product data sheet - 9397 750 14513 -

Philips Semiconductors PBSS302PD 9397 750 14513 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 18 April 2005 14 of 15 12. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Deﬁnitions Short-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. 14. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Deﬁnition I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

Product Information

PBSS302PD specifications and overview.

Summary

40 V PNP low VCEsat (BISS) transistor Rev. 01-18 April 2005

Description

40 V PNP low VCEsat (BISS) transistor Rev. 01-18 April 2005

Source title PBSS302PD Datasheet(PDF) - NXP Semiconductors

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