PBSS301ND | DigiCamel IC Datasheet

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Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 16

Technical content

Product proﬁle

1.1 General description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT457 (SC-74) SMD plastic package. PNP complement: PBSS301PD.

1.2 Features

■ Very low collector-emitter saturation resistance ■ Ultra low collector-emitter saturation voltage ■ 4 A continuous collector current ■ Up to 15 A peak current ■ High efﬁciency due to less heat generation

1.3 Applications

■ Power management functions ■ Charging circuits ■ DC-to-DC conversion ■ MOSFET gate driving ■ Power switches (e.g. motors, fans) ■ Thin Film Transistor (TFT) backlight inverter

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O 3, standard footprint. [2] Pulse test: tp ≤ 300 µs;δ≤ 0.02. PBSS301ND

20 V, 4 A NPN low VCEsat (BISS) transistor

Rev. 02 — 25 April 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current (DC) [1] --4 A ICM peak collector current single pulse; tp ≤ 1m s --1 5 A R CEsat collector-emitter saturation resistance IC =4A ; IB = 400 mA [2] - 5 07 0m Ω

Pinning information 3. Ordering information 4. Marking 5. Limiting values Table 2: Pinning Pin Description Simpliﬁed outline Symbol 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector 13 2 456 sym014 1, 2, 5, 6 Table 3: Ordering information Type number Package Name Description Version PBSS301ND SC-74 plastic surface mounted package; 6 leads SOT457 Table 4: Marking codes Type number Marking code PBSS301ND C6 Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 20 V VCEO collector-emitter voltage open base - 20 V VEBO emitter-base voltage open collector - 5 V IC collector current (DC) [1] -4 A ICM peak collector current single pulse; tp ≤ 1m s -1 5 A IB base current (DC) - 0.8 A IBM peak base current single pulse; tp ≤ 1m s -2 A Ptot total power dissipation Tamb ≤ 25 °C [2] - 360 mW [3] - 600 mW [4] - 750 mW [1] - 1.1 W [2][5] - 2.5 W

9397 750 14958 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 25 April 2005 3 of 16 Philips Semiconductors PBSS301ND [1] Device mounted on a ceramic PCB, Al2O 3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Operated under pulsed conditions: Duty cycleδ≤ 10 % and pulse width tp ≤ 10 ms. Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C (1) Ceramic PCB, Al2O 3, standard footprint (2) FR4 PCB; mounting pad for collector 6 cm2 (3) FR4 PCB; mounting pad for collector 1 cm2 (4) FR4 PCB; standard footprint Fig 1. Power derating curves Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit (1) Tamb (°C) −75 175 12525 75−25 006aaa270 800 400 1200 1600 Ptot (mW) (2) (4) (3)

Thermal characteristics [1] Device mounted on a ceramic PCB, Al2O 3, standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [5] Operated under pulsed conditions: Duty cycleδ≤ 10 % and pulse width tp ≤ 10 ms. Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit R th(j-a) thermal resistance from junction to ambient in free air [2] - - 350 K/W [3] - - 208 K/W [4] - - 160 K/W [1] - - 113 K/W [2][5] - - 50 K/W R th(j-sp) thermal resistance from junction to solder point - - 45 K/W FR4 PCB; standard footprint (1) δ =1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ =0 Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa271 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 (3) (4) (5) (6) (7) (8) (9) (10) (1) (2)

9397 750 14958 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 25 April 2005 5 of 16 Philips Semiconductors PBSS301ND FR4 PCB; mounting pad for collector 1 cm2 (1) δ =1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ =0 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa272 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 (2) (1) (5) (6) (7) (8) (9) (10) (3) (4)

9397 750 14958 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 25 April 2005 6 of 16 Philips Semiconductors PBSS301ND FR4 PCB; mounting pad for collector 6 cm2 (1) δ =1 (2) δ = 0.75 (3) δ = 0.5 (4) δ = 0.33 (5) δ = 0.2 (6) δ = 0.1 (7) δ = 0.05 (8) δ = 0.02 (9) δ = 0.01 (10) δ =0 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa273 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 (1) (2) (3) (4) (5) (6) (7) (8) (9) (10)

Characteristics [1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. Table 7: Characteristics Tamb = 25°C unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB =2 0V ; IE =0A - - 0 . 1 µA VCB =2 0V ; IE =0A ; Tj= 150°C -- 5 0 µA ICES collector-emitter cut-off current VCE =2 0V ; VBE = 0 V - - 0.1 µA IEBO emitter-base cut-off current VEB =5V ; IC = 0 A - - 0.1 µA hFE DC current gain V CE =2V ; IC = 0.5 A 300 450 - VCE =2V ; IC =1A [1] 300 430 - VCE =2V ; IC =2A [1] 250 400 - VCE =2V ; IC =4A [1] 200 310 - VCE =2V ; IC =6A [1] 100 230 - VCEsat collector-emitter saturation voltage IC = 0.5 A; IB = 50 mA - 30 50 mV IC = 1 A; IB = 50 mA - 60 90 mV IC = 2 A; IB = 200 mA - 110 150 mV IC = 4 A; IB = 400 mA [1] - 200 280 mV IC = 6 A; IB = 600 mA [1] - 300 420 mV R CEsat collector-emitter saturation resistance IC = 4 A; IB = 400 mA [1] -5 0 7 0 m Ω VBEsat base-emitter saturation voltage IC = 0.5 A; IB = 50 mA - 0.79 0.85 V IC = 1 A; IB = 50 mA - 0.81 0.9 V IC = 1 A; IB = 100 mA [1] - 0.83 1 V IC = 4 A; IB = 400 mA [1] - 1.0 1.1 V VBEon base-emitter turn-on voltage VCE =2V ; IC = 2 A - 0.79 1 V td delay time V CC = 12.5 V; IC =3A ; IBon = 0.15 A; IBoff= −0.15 A -1 2 - n s tr rise time - 36 - ns ton turn-on time - 48 - ns ts storage time - 230 - ns tf fall time - 50 - ns toff turn-off time - 280 - ns fT transition frequency VCE =1 0V ; IC = 0.1 A; f = 100 MHz - 100 - MHz C c collector capacitance VCB =1 0V ; IE =ie =0A ; f=1M H z -6 0 - p F

9397 750 14958 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 25 April 2005 8 of 16 Philips Semiconductors PBSS301ND VCE =2V (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C VCE =2V (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 5. DC current gain as a function of collector current; typical values Fig 6. Base-emitter voltage as a function of collector current; typical values IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. Collector-emitter saturation voltage as a function of collector current; typical values IC (mA) 10-1 10510410311 0 210 006aaa328 400 600 200 800 1000 hFE (1) (2) (3) IC (mA) 10-1 10510410311 0 210 006aaa329 0.8 0.4 0.2 0.6 1.0 1.4 1.2 V BE (mV) (1) (2) (3) 006aaa330 10-2 10-1 1.0 VCEsat (V) 10-3 IC (mA) 10-1 10510410311 0 210 (1) (2) (3) 006aaa331 10-2 10-1 VCEsat (V) 10-3 IC (mA) 10-1 10510410311 0 210 (1) (2) (3)

9397 750 14958 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 25 April 2005 9 of 16 Philips Semiconductors PBSS301ND IC /IB =2 0 (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 9. Base-emitter saturation voltage as a function of collector current; typical values Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values IC (mA) 10-1 10510410311 0 210 006aaa332 VBEsat (V) 1.1 0.9 0.7 0.5 0.3 1.3 1.5 0.1 (1) (2) (3) 10-1 102 103 R CEsat (W ) 10-2 006aaa333 IC (mA) 10-1 10510410311 0 210 (1) (2) (3)

9397 750 14958 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 25 April 2005 10 of 16 Philips Semiconductors PBSS301ND Tamb =2 5°C (1) IB =8 0m A (2) IB =7 2m A (3) IB =6 4m A (4) IB =5 6m A (5) IB =4 8m A (6) IB =4 0m A (7) IB =3 2m A (8) IB =2 4m A (9) IB =1 6m A (10) IB =8m A IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 11. Collector current as a function of collector-emitter voltage; typical values Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values VCE (V) 006aaa334 IC (A) (10) (9) (8) (7) (6) (5) (4) (3) (2) (1) 006aaa335 10-1 102 R CEsat (W ) 10-2 IC (mA) 10-1 10510410311 0 210 (3) (1) (2)

Test information Fig 13. BISS transistor switching time deﬁnition VCC = 12.5 V; IC = 3 A; IBon = 0.15 A; IBoff= −0.15 A Fig 14. Test circuit for switching times 006aaa003 IBon (100 %) IB input pulse (idealized waveform) IBoff 90 % 10 % IC (100 %) IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff R C DUT mlb826 Vo R B (probe) 450 W (probe)

450 Woscilloscope oscilloscope

Package outline Fig 15. Package outline SOT457 (SC-74) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT457 SC-74 wB Mbp D e pin 1 index A Lp Q detail X H E E v M A AB y scale c X 13 2 456 0 1 2 mm Plastic surface mounted package; 6 leads SOT457 UNIT A 1 bp cD E H E Lp Qy wv mm 0.1 0.013 0.40 0.25 3.1 2.7 0.26 0.10 1.7 1.3 e 0.95 3.0 2.5 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.6 0.2 0.33 0.23 A 1.1 0.9 01-05-04 04-11-08

Packing information [1] For further information and the availability of packing methods, seeSection16. [2] T1: normal taping [3] T2: reverse taping Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PBSS301ND SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165

Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBSS301ND_2 20050425 Product data sheet - 9397 750 14958 PBSS301ND_1 Modiﬁcations:

Section1.3: acronym TFT explained
Figure2,3 and4: Zth renamed to Zth(j-a)
Figure11: ﬁgure notes amended
Section15: added PBSS301ND_1 20050405 Product data sheet - 9397 750 14487 -

Philips Semiconductors PBSS301ND 9397 750 14958 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 25 April 2005 15 of 16 12. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Deﬁnitions Short-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. 14. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed. 15. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Deﬁnition I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 25 April 2005 Document number: 9397 750 14958 Published in The Netherlands Philips Semiconductors PBSS301ND

Contents

Product Information

PBSS301ND specifications and overview.

Summary

20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02-25 April 2005

Description

20 V, 4 A NPN low VCEsat (BISS) transistor Rev. 02-25 April 2005

Source title PBSS301ND Datasheet(PDF) - NXP Semiconductors

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