PBSS2515YPN PHILIPS | Alldatasheet

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Technical content

Product specification Supersedes data of 2002 May 08

2005 Jan 11

15 V low VCE(sat) NPN/PNP

book, halfpage MBD128

2005 Jan 11 2

Philips Semiconductors Product specification

15 V low VCE(sat) NPN/PNP transistor PBSS2515YPN

FEATURES

  • Low collector-emitter saturation voltage
  • High current capability
  • Replaces two SC-70 packaged low VCEsat transistors on same PCB area
  • Reduces required PCB area
  • Reduced pick and place costs. APPLICATION
  • General purpose switching and muting
  • Low frequency driver circuits
  • LCD backlighting
  • Supply line switching circuits
  • Battery driven equipment (mobile phones, video cameras and hand-held devices).

DESCRIPTION

NPN/PNP low VCEsat transistor pair in a SC-88 plastic package. MARKING Note 1. * = -: made in Hong Kong * = t: made in Malaysia * = W: made in China. QUICK REFERENCE DATA PINNING TYPE NUMBER MARKING CODE PBSS2515YPN N8* SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 15 V ICM peak collector current 1 A R CEsat equivalent on-resistance <500 mΩ PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 handbook, halfpage MAM445 13 2 TR1 TR2 6 45 Top view 123 654 Fig.1 Simplified outline SC-88 (SOT363) and symbol.

ORDERING INFORMATION

PBSS2515YPN SC-88 plastic surface mounted package; 6 leads SOT363

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Philips Semiconductors Product specification In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 15 V VEBO emitter-base voltage open collector − 6V IC collector current (DC) − 500 mA ICM peak collector current − 1A IBM peak base current − 100 mA Ptot total power dissipation T amb ≤ 25 °C − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Per device Ptot total power dissipation T amb ≤ 25 °C; note 1 − 300 mW SYMBOL PARAMETER CONDITIONS VALUE UNIT R th(j-a) thermal resistance from junction to ambient note 1 416 K/W

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Philips Semiconductors Product specification Tamb =2 5°C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs;δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 15 V; IE =0A −− 100 nA VCB = 15 V; IE = 0 A; Tj= 150°C −− 50 µA IEBO emitter-base cut-off current VEB =5V ; IC =0A −− 100 nA hFE DC current gain V CE =2V ; IC =1 0m A 2 0 0 −− VCE =2V ; IC = 100 mA; note 1 150 −− VCE =2V ; IC = 500 mA; note 1 90 −− VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA −− 25 mV IC = 200 mA; IB =1 0m A −− 150 mV IC = 500 mA; IB = 50 mA; note 1 −− 250 mV R CEsat equivalent on-resistance I C = 500 mA; IB = 50 mA; note 1 − 300 <500 m Ω VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 −− 1.1 V VBEon base-emitter turn-on voltage VCE =2V ; IC = 100 mA; note 1 −− 0.9 V NPN transistor fT transition frequency I C = 100 mA; VCE = 5 V; f = 100 MHz 250 420 − MHz C c collector capacitance V CB = 10 V; IE =Ie = 0 A; f = 1 MHz− 4.4 6 pF PNP transistor fT transition frequency I C = −100 mA; VCE = −5V ; f = 100 MHz 100 280 − MHz C c collector capacitance V CB = −10 V; IE =Ie = 0 A; f = 1 MHz−− 10 pF

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Philips Semiconductors Product specification handbook, halfpage 400 600 200 MLD687 10-1 11 0 IC (mA) hFE 102 103 (2) (1) (3) Fig.2 DC current gain as a function of collector current; typical values. TR1 (NPN) VCE =2V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD689 110-1 IC (mA) VBE (mV) 10 10 2 103 (1) (3) (2) Fig.3 Base-emitter voltage as a function of collector current; typical values. TR1 (NPN) VCE =2V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage 103 102 MLD691 10-1 11 0 IC (mA) VCEsat (mV) 102 103 (1) (3) (2) Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN) IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage 200 1200 400 600 800 1000 MLD690 110-1 IC (mA) VBEsat (mV) 10 10 2 103 (2) (3) (1) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. TR1 (NPN) IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C.

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Philips Semiconductors Product specification handbook, halfpage102 10-1 MLD692 10-1 11 0 IC (mA) R CEsat (W ) 102 103 (2) (1) (3) Fig.6 Equivalent on-resistance as a function of collector current; typical values. TR1 (NPN) IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage (1)(2)(3)(4) (6) (8) IC (mA) VCE (V) 1200 800 400 21 0 468 MLD688 (9) (10) (7) (5) Fig.7 Collector current as a function of collector-emitter voltage; typical values. (1) IB = 4.6 mA. (2) IB = 4.14 mA. (3) IB = 3.68 mA. (4) IB = 3.22 mA. (5) IB = 2.76 mA. (6) IB = 2.3 mA. (7) IB = 1.84 mA. (8) IB = 1.38 mA. (9) IB = 0.92 mA. (10) IB = 0.46 mA. TR1 (NPN) Tamb =2 5°C.

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Philips Semiconductors Product specification handbook, halfpage 400 600 200 MLD693 -10-1 -1 -10 IC (mA) hFE -102 -103 (2) (1) (3) Fig.8 DC current gain as a function of collector current; typical values. TR2 (PNP) VCE = −2V . (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage -200 -1200 -400 -600 -800 -1000 MLD695 -1-10-1 IC (mA) VBE (mV) -10 -102 -103 (1) (3) (2) Fig.9 Base-emitter voltage as a function of collector current; typical values. TR2 (PNP) VCE = −2V . (1) Tamb = −55 °C. (2) Tamb =2 5°C. (3) Tamb = 150°C. handbook, halfpage -103 -102 -10 MLD697 -10-1 -1 -10 IC (mA) VCEsat (mV) -102 -103 (1)(2) (3) Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP) IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage -200 -1200 -400 -600 -800 -1000 MLD696 -1-10-1 IC (mA) VBEsat (mV) -10 -102 -103 (2) (3) (1) Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. TR2 (PNP) IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C.

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Philips Semiconductors Product specification handbook, halfpage 103 102 10-1 MLD698 -10-1 -1 -10 IC (mA) R CEsat (W ) -102 -103 (1) (3)(2) Fig.12 Equivalent on-resistance as a function of collector current; typical values. TR2 (PNP) IC /IB = 20. (1) Tamb = 150°C. (2) Tamb =2 5°C. (3) Tamb = −55 °C. handbook, halfpage (1)(2)(3)(4) (5) (6) (7) (8) (10) IC (mA) VCE (V) -1200 -800 -400 -2 -10-4 -6 -8 MLD694 (9) Fig.13 Collector current as a function of collector-emitter voltage; typical values. (1) IB = −7 mA. (2) IB = −6.3 mA. (3) IB = −5.6 mA. (4) IB = −4.9 mA. (5) IB = −4.2 mA. (6) IB = −3.5 mA. (7) IB = −2.8 mA. (8) IB = −2.1 mA. (9) IB = −1.4 mA. (10) IB = −0.7 mA. TR2 (PNP) Tamb =2 5°C.

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Philips Semiconductors Product specification D e pin 1 index A Lp Q detail X H E E v M A AB y 0 1 2 mm scale c X 13 2 456 Plastic surface mounted package; 6 leads SOT363 UNIT A 1 max bp cD E e1 H E Lp Qy wv mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.10.2 DIMENSIONS (mm are the original dimensions) 0.45 0.15 0.25 0.15 A 1.1 0.8 97-02-28 04-11-08

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Philips Semiconductors Product specification

  1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. LEVEL DATA SHEET STATUS (1) PRODUCT STATUS (2)(3) DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.

© Koninklijke Philips Electronics N.V. 2005 SCA77 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 Printed in The Netherlands R75/03/pp11 Date of release:2005 Jan 11 Document order number: 9397 750 14428