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Document overview
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Technical content
1.1 General description
Device (SMD) plastic package.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel
Table 1. Quick reference data
40 V, 2 A PNP BISS/Trench MOSFET module
[1] Device mounted on an FR4 PCB, single-sided copper , tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on an FR4 PCB, single-sided c opper, tin-plated, mounting pad for drain 1 cm2. Table 1. Quick reference data …continued Table 2. Pinning Table 3. Ordering information Table 4. Marking code
[1] Device mounted on an FR4 PCB, single-sided copper , tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on an FR4 PCB, single-sided c opper, tin-plated, mounting pad for drain 1 cm2. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Product data sheet Rev. 1 — 20 June 2012 4 of 20 NXP Semiconductors PBSM5240PFH (1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm 2 (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm 2 (3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm 2 (4) FR4 PCB, single-sided copper, standard footprint Fig 1. BISS transistor: Power derating curves Fig 2. MOSFET: Normalized total power dissipation as a function of solder point temperature Fig 3. MOSFET: Normalized continuous drain current as a function of solder point temperature Tamb (°C) –75 175 12525 75–25 006aac6081.4 Ptot (W) 1.0 0.6 0.2 0.0 0.4 0.8 1.2 (2) (1) (3) (4) Tsp (°C) 0 200 15050 100 03aa17 120 Pder (%) Tsp (°C) 0 200 15050 100 03aa25 120 Ider (%) Pder Ptot Ptot 25 C ID ID2 5C
Product data sheet Rev. 1 — 20 June 2012 5 of 20 NXP Semiconductors PBSM5240PFH IDM = single pulse (1) t p =1m s (2) DC; T sp =2 5 C (3) t p =1 0m s (4) t p = 100 ms (5) DC; T amb =2 5 C; drain mounting pad 1 cm2 Fig 4. MOSFET: Safe operating area; junction to ambien t; continuous and peak drain currents as a function of drain-source voltage 006aac609 VDS (V) 10–1 102101 10–1 ID (A) 10–2 (1) (2) (3) (4) (5) Limit RDSon = VDS/ID
[1] Device mounted on an FR4 PCB, single-sided copper , tin-plated, mounting pad for collector 6 cm2. [2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided c opper, tin-plated, mounting pad for drain 1 cm2. Table 6. Thermal characteristics
Product data sheet Rev. 1 — 20 June 2012 7 of 20 NXP Semiconductors PBSM5240PFH FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 Fig 6. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 Fig 7. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac611 10–5 1010–210–4 10210–1 tp (s) 10–3 1031 102 103 Zth(j-a) (K/W) duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aac612 10–5 1010–210–4 10210–1 tp (s) 10–3 1031 102 103 Zth(j-a) (K/W) duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75
Product data sheet Rev. 1 — 20 June 2012 8 of 20 NXP Semiconductors PBSM5240PFH FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 Fig 8. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values FR4 PCB, single-sided copper, mounting pad for drain 1 cm2 Fig 9. MOSFET: Transient therma l impedance from junction to ambient as a function of pulse duration; typical values 006aac613 10–5 1010–210–4 10210–1 tp (s) 10–3 1031 102 103 Zth(j-a) (K/W) duty cycle = 1 0.01 0.02 0.05 0.1 0.2 0.33 0.5 0.75 006aac614 tp (s) 10–3 102 10310110–2 10–1 102 103 Zth(j-a) (K/W) 0.75 0.5 0.33 0.25 0.2 0.1 0.05 0.02 0.01 duty cycle = 1
Table 7. Characteristics for PNP low V CEsat transistor Tamb =2 5 C unless otherwise specified.
Product data sheet Rev. 1 — 20 June 2012 10 of 20 NXP Semiconductors PBSM5240PFH VCE = 5V (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 55 C Tamb =2 5 C Fig 10. PNP transistor: DC current gain as a function of collector current; typical values Fig 11. PNP transistor: Collector current as a function of collector-emitter voltage; typical values VCE = 5V (1) T amb = 55 C (2) T amb =2 5 C (3) T amb = 100 C IC/IB =2 0 (1) T amb = 55 C (2) T amb =2 5 C (3) T amb = 100 C Fig 12. PNP transistor: Base-emitter voltage as a function of collector current; typical values Fig 13. PNP transistor: Base-emitter saturation voltage as a function of collector current; typical values 006aac783 200 100 300 400 hFE IC (mA) (1) (2) (3) /g57/g38/g40/g3/g11/g57/g12 /g19/g16 /g24 /g16/g23/g16/g21 /g16/g22/g16/g20 /g68/g68/g68/g16/g19/g19/g22/g23/g22/g28 /g16/g19/g17/g25 /g16/g20/g17/g21 /g16/g20/g17/g27 /g44/g38 /g11/g36/g12 /g19/g17/g19 /g44/g37/g3/g11/g80/g36/g12/g3/g32/g3/g16/g21/g23 /g16/g21/g20/g17/g25 /g16/g20/g28/g17/g21/g16/g20/g25/g17/g27 /g16/g20/g23/g17/g23 /g16/g20/g21 /g16/g28/g17/g25 /g16/g26/g17/g21 /g16/g23/g17/g27 /g16/g21/g17/g23 006aac615 –0.8 –0.4 –1.2 –1.6 VBE (V) –0.0 IC (mA) (2) (1) (3) 006aaa468 −0.5 −0.9 −1.3 V BEsat (V) −0.1 IC (mA) (2) (3) (1)
Product data sheet Rev. 1 — 20 June 2012 11 of 20 NXP Semiconductors PBSM5240PFH IC/IB =2 0 (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 55 C Tamb =2 5 C (1) I C/IB = 100 (2) I C/IB =5 0 (3) I C/IB =1 0 Fig 14. PNP transistor: Coll ector-emitter saturation voltage as a function of collector current; typical values Fig 15. PNP transistor: Coll ector-emitter saturation voltage as a function of collector current; typical values IC/IB =2 0 (1) T amb = 100 C (2) T amb =2 5 C (3) T amb = 55 C Tamb =2 5 C (1) I C/IB = 100 (2) I C/IB =5 0 (3) I C/IB =1 0 Fig 16. PNP transistor: Coll ector-emitter saturation resistance as a function of collector current; typical values Fig 17. PNP transistor: Coll ector-emitter saturation resistance as a function of collector current; typical values 006aaa466 IC (mA) −10−1 VCEsat (V) −10−2 (3) (1) (2) 006aaa471 IC (mA) −10−2 −10−1 −10 VCEsat (V) −10−3 (3) (2) (1) 006aaa470 IC (mA) 102 103 RCEsat (Ω) 10−1 (3) (1) (2) 006aaa472 IC (mA) 102 103 RCEsat (Ω) 10−1 (3) (2) (1)
Table 8. Characteristics for N-channel Trench MOSFET Tj =2 5 C unless otherwise specified.
Product data sheet Rev. 1 — 20 June 2012 13 of 20 NXP Semiconductors PBSM5240PFH Tj =2 5 CT j =2 5 C; VDS =5V Fig 18. MOSFET: Output characteristics: drain current as a function of drain-source voltage; typical values Fig 19. MOSFET: Subthreshold drain current as a function of gate-source voltage Tj =2 5 C (1) V GS =1 . 8V (2) V GS =2 . 0V (3) V GS =2 . 5V (4) V GS =3 . 0V (5) V GS =4 . 5V VDS >I D RDSon Fig 20. MOSFET: Drain-source on-state resistance as a function of drain current; typical values Fig 21. MOSFET: Transfer characteristics: drain current as a function of gate-source voltage; typical values 03an94 0.5 1.5 2.5 0 0.5 1 1.5 2 VDS (V) ID (A) 4.5 3 2.5 1.8 VGS (V) = 1.5 03am43 VGS (V) 0 1.2 0.80.4 10−4 10−5 10−3 ID (A) 10−6 min typ max ID (A) 006aac616 0.4 0.6 0.2 0.8 1.0 RDSon (Ω) 0.0 (2)(1) (3) (4) (5) 03an96 0.5 1.5 2.5 01234 VGS (V) ID (A) Tj = 150 °C25 °C
Product data sheet Rev. 1 — 20 June 2012 14 of 20 NXP Semiconductors PBSM5240PFH ID =1m A ; VDS =V GS Fig 22. MOSFET: Normalized drain-source on-state resistance as a function of junction temperature; typical values Fig 23. MOSFET: Gate-source threshold voltage as a function of junction temperature f=1M H z ; VGS =0V Fig 24. MOSFET: Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Fig 25. MOSFET: Gate-source voltage as a function of gate charge; typical values Tj (°C) –60 180 12006 0 006aac618 0.6 1.2 1.8 a 0.0 Tj (°C) −60 18012006 0 03aj65 0.6 0.3 0.9 1.2 VGS(th) (V) max min typ a RDSon RDSon 25 C 03an98 102 10-1 1 10 102 VDS (V) C (pF) Ciss Coss Crss 03an99 0 0.2 0.4 0.6 0.8 1 Q G (nC) VGS (V) ID = 1 A Tj = 25 °C VDS = 15 V
[1] For further information and the availability of packing methods, see Section 13. Table 9. Packing methods
Product data sheet Rev. 1 — 20 June 2012 16 of 20 NXP Semiconductors PBSM5240PFH
- Soldering Fig 29. Reflow soldering footprint DFN2020-6 (SOT1118) sot1118_fr Dimensions in mm solder paste solder resist occupied area solder lands 0.49 0.49 0.650.65 0.875 0.875 2.25 0.35 (6×) 0.3 (6×) 0.4 (6×) 0.45 (6×) 0.72 (2×) 0.82 (2×) 1.05 (2×) 1.15 (2×) 2.1
Table 10. Revision history
Product data sheet Rev. 1 — 20 June 2012 18 of 20 NXP Semiconductors PBSM5240PFH
- Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
Product data sheet Rev. 1 — 20 June 2012 19 of 20 NXP Semiconductors PBSM5240PFH Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PBSM5240PFH © NXP B.V. 2012. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 20 June 2012 Document identifier: PBSM5240PFH Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 14. Contents