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Product proﬁle

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package.

1.2 Features

■ Low VCEsat (BISS) transistor and resistor-equipped transistor in one package ■ Low threshold voltage (< 1 V) compared to MOSFET ■ Low drive power required ■ Space-saving solution ■ Reduction of component count

1.3 Applications

■ Supply line switches ■ Battery charger switches ■ High-side switches for LEDs, drivers and backlights ■ Portable equipment

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O 3, standard footprint. [2] Pulse test: tp ≤ 300µs;δ≤ 0.02. PBLS6002D

60 V PNP BISS loadswitch

Rev. 01 — 23 June 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage open base - - −60 V IC collector current (DC) [1] -- −1A R CEsat collector-emitter saturation resistance IC = −1A ; IB = −100 mA [2] - 255 340 m Ω TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage open base - - 50 V IO output current (DC) - - 100 mA R1 bias resistor 1 (input) 3.3 4.7 6.1 k Ω R2/R1 bias resistor ratio 0.8 1 1.2

Pinning information 3. Ordering information 4. Marking Table 2: Pinning Pin Description Simpliﬁed outline Symbol 1 emitter TR1 2 base TR1 3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2 6 collector TR1 13 2 456 65 4 1 23 TR1 TR2 sym036 Table 3: Ordering information Type number Package Name Description Version PBLS6002D SC-74 plastic surface mounted package; 6 leads SOT457 Table 4: Marking codes Type number Marking code PBLS6002D F2

Limiting values [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O 3, standard footprint. Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1; PNP low VCEsat transistor VCBO collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −60 V VEBO emitter-base voltage open collector - −5V IC collector current (DC) [1] - −700 mA [2] - −850 mA [3] - −1A ICM peak collector current single pulse; tp ≤ 1m s - −2A IB base current (DC) - −300 mA IBM peak base current single pulse; tp ≤ 1m s - −1A Ptot total power dissipation Tamb ≤ 25 °C [1] - 250 mW [2] - 350 mW [3] - 400 mW TR2; NPN resistor-equipped transistor V CBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +30 V negative - −10 V I O output current (DC) - 100 mA ICM peak collector current - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW [2] - 200 mW [3] - 200 mW Per device P tot total power dissipation Tamb ≤ 25 °C [1] - 400 mW [2] - 530 mW [3] - 600 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C

Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O 3, standard footprint. (1) Ceramic PCB, Al2O 3, standard footprint (2) FR4 PCB, mounting pad for collector 1 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves Tamb (°C) 0 160 12040 80 006aaa461 0.4 0.2 0.6 0.8 Ptot (W) (1) (2) (3) Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R th(j-a) thermal resistance from junction to ambient in free air [1] - - 312 K/W [2] - - 236 K/W [3] - - 208 K/W TR1; PNP low VCEsat transistor R th(j-sp) thermal resistance from junction to solder point - - 105 K/W

9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 5 of 16 Philips Semiconductors PBLS6002D FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values FR4 PCB, mounting pad for collector 1 cm2 Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa462 102 103 Zth(j-a) (K/W) 10−1 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.75 0.5 0.33 0.2 0.1 δ = 1 0.05 0.02 0.01 006aaa463 102 103 Zth(j-a) (K/W) 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.75 0.5 0.33 0.2 0.1 δ = 1 0.05 0.02 0.01

Characteristics Ceramic PCB, Al2O 3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa464 102 103 Zth(j-a) (K/W) 10−5 1010−210−4 10210−1 tp (s) 10−3 1031 0.75 0.5 0.33 0.2 0.1 δ = 1 0.05 0.02 0.01 Table 7: Characteristics Tamb = 25°C unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor ICBO collector-base cut-off current VCB = −60 V; IE =0A - - −100 nA VCB = −60 V; IE =0A ; Tj= 150°C -- −50 µA ICES collector-emitter cut-off current VCE = −60 V; VBE =0V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −100 nA hFE DC current gain V CE = −5 V; IC = −1 mA 200 350 - VCE = −5V ; IC = −500 mA [1] 150 230 - VCE = −5V ; IC = −1000 mA [1] 100 160 - VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1m A - −110 −175 mV IC = −500 mA; IB = −50 mA [1] - −135 −180 mV IC = −1000 mA; IB = −100 mA [1] - −255 −340 mV R CEsat collector-emitter saturation resistance IC = −1A ; IB = −100 mA [1] - 255 340 m Ω VBEsat base-emitter saturation voltage

9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 7 of 16 Philips Semiconductors PBLS6002D [1] Pulse test: tp ≤ 300µs;δ≤ 0.02. VBEon base-emitter turn-on voltage td delay time I C = −0.5 A; IBon = −25 mA; IBoff=2 5m A -1 1 -n s tr rise time - 30 - ns ton turn-on time - 41 - ns ts storage time - 205 - ns tf fall time - 55 - ns toff turn-off time - 260 - ns fT transition frequency I C = −50 mA; VCE =−10 V; f = 100 MHz 150 185 - MHz C c collector capacitance V CB = −10 V; IE =ie = 0 A; f = 1 MHz - 9 15 pF TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB =5 0V ; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =3 0V ; IB = 0 A --1 µA VCE =3 0V ; IB =0A ; Tj= 150°C --5 0 µA IEBO emitter-base cut-off current VEB =5V ; IC = 0 A - - 900 µA hFE DC current gain V CE =5V ; IC =2 0m A 3 0 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V ; IC = 100µA - 1.1 0.5 V VI(on) on-state input voltage VCE = 0.3 V; IC =2 0m A 2.5 1.9 - V R1 bias resistor 1 (input) 3.3 4.7 6.1 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 C c collector capacitance V CB =1 0V ; IE =ie = 0 A; f = 1 MHz - - 2.5 pF Table 7: Characteristics …continued Tamb = 25°C unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Unit

9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 8 of 16 Philips Semiconductors PBLS6002D VCE = −5V (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values Fig 6. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values VCE = −5V (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C IC /IB =2 0 (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 006aaa474 200 400 600 h FE IC (mA) (1) (2) (3) 006aaa475 IC (mA) -10-1 VCEsat (mV) -10-2 (1) (2) (3) 006aaa476 -0.6 -0.4 -0.8 -1.0 VBE (V) -0.2 IC (mA) (1) (2) (3) 006aaa477 -0.5 -0.7 -0.3 -0.9 -1.1 VBEsat (V) -0.1 IC (mA) (1) (2) (3)

9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 9 of 16 Philips Semiconductors PBLS6002D Tamb =2 5°CI C /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values Fig 10. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 12. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values 006aaa478 VCE (V) −0.8 −1.2 −0.4 −1.6 −2.0 IC (A) 0.0 IB (mA) = −35.0 −31.5 −28.0 −24.5 −21.0 −17.5 −14.0 −10.5 −7.0 −3.5 006aaa479 IC (mA) 102 103 R CEsat (W ) 10-1 (1) (2) (3) 006aaa480 IC (mA) -10-1 VCEsat (V) -10-2 (1) (2) (3) 006aaa481 IC (mA) 102 103 R CEsat (W ) 10-1 (1) (2) (3)

9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 10 of 16 Philips Semiconductors PBLS6002D VCE =5V (1) Tamb = 150°C (2) Tamb =2 5°C (3) Tamb = −40 °C IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values Fig 14. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb =2 5°C (3) Tamb = 100°C VCE =5V (1) Tamb = −40 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 16. TR2 (NPN): Off-state input voltage as a function of collector current; typical values IC (mA) 10-1 102101 006aaa030 102 103 hFE (1) (2) (3) IC (mA) 11 0 210 006aaa031 10-1 VCEsat (V) 10-2 (1) (2) (3) 006aaa032 IC (mA) 10−1 102101 VI(on) (V) 10−1 (2) (1) (3) 006aaa033 IC (mA) 10−2 10110−1 VI(off) (V) 10−1 (1) (2) (3)

Test information Fig 17. BISS transistor switching time deﬁnition IC = −0.5 A; IBon = −25 mA; IBoff= 25 mA; R1 = open; R2 = 100Ω ; RB = 300Ω ; RC = 20Ω Fig 18. Test circuit for switching times 006aaa266 −IBon (100 %) −IB input pulse (idealized waveform) −IBoff 90 % 10 % −IC (100 %) −IC td ton 90 % 10 % tr output pulse (idealized waveform) tf t ts toff R C DUT mgd624 Vo R B (probe) 450 W (probe)

450 Woscilloscope oscilloscope

Package outline 10. Packing information [1] For further information and the availability of packing methods, seeSection17. [2] T1: normal taping [3] T2: reverse taping Fig 19. Package outline SOT457 (SC-74) 04-11-08Dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.250.95 1.1 0.9 0.6 0.2 13 2 456 Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 10000 PBLS6002D SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; T2[3] -125 -165

Soldering Dimensions in mm Fig 20. Reﬂow soldering footprint Dimensions in mm Fig 21. Wave soldering footprint solder lands solder resis occupied ar solder past 0.95 2.825 0.45 0.55 1.60 1.95 1.70 3.10 3.20 3.30 msc422 1.40 4.30 5.30 0.45 MSC423 1.45 4.455.05 solder lands solder resist occupied area solder paste

Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes PBLS6002D_1 20050623 Product data sheet - 9397 750 15197 -

Philips Semiconductors PBLS6002D 9397 750 15197 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 23 June 2005 15 of 16 13. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Deﬁnitions Short-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. 15. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed. 16. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 17. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Deﬁnition I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 23 June 2005 Document number: 9397 750 15197 Published in The Netherlands Philips Semiconductors PBLS6002D

Contents

Product Information

PBLS6002D specifications and overview.

Summary

60 V PNP BISS loadswitch Rev. 01-23 June 2005

Description

60 V PNP BISS loadswitch Rev. 01-23 June 2005

Source title PBLS6002D Datasheet(PDF) - NXP Semiconductors

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