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PDF pages: 11

Technical content

Product proﬁle

1.1 General description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in one package.

1.2 Features

■ Low VCEsat (BISS) and resistor-equipped transistor in one package ■ Low threshold voltage (< 1 V) compared to MOSFET ■ Low drive power required ■ Space-saving solution ■ Reduction of component count

1.3 Applications

■ Supply line switches ■ Battery charger switches ■ High-side switches for LEDs, drivers and backlights ■ Portable equipment

1.4 Quick reference data

PBLS4003Y; PBLS4003V

40 V PNP BISS loadswitch

Rev. 02 — 14 July 2005 Product data sheet Table 1: Product overview Type number Package Philips JEITA PBLS4003Y SOT363 SC-88 PBLS4003V SOT666 - Table 2: Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor VCEO collector-emitter voltage open base - - −40 V IC collector-current (DC) - - −500 mA R CEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] - 440 700 m Ω TR2; NPN resistor-equipped transistor VCEO collector-emitter voltage open base - - 50 V

9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 2 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V [1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. 2. Pinning information 3. Ordering information 4. Marking [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China IO output current - - 100 mA R1 bias resistor 1 (input) 7 10 13 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 Table 2: Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit Table 3: Pinning Pin Description Simpliﬁed outline Symbol 1 emitter TR1 2 base TR1 3 output (collector) TR2

4 GND (emitter) TR2

5 input (base) TR2 6 collector TR1 001aab555 6 45 1 32 65 4 1 23 TR1 TR2 sym036 Table 4: Ordering information Type number Package Name Description Version PBLS4003Y SC-88 plastic surface mounted package; 6 leads SOT363 PBLS4003V - plastic surface mounted package; 6 leads SOT666 Table 5: Marking codes Type number Marking code[1] PBLS4003Y S3* PBLS4003V K3

Limiting values [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reﬂow soldering is the only recommended soldering method. Table 6: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit TR1; PNP low VCEsat transistor VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector - −6V IC collector current (DC) - −500 mA ICM peak collector current single pulse; tp ≤ 1m s - −1A IB base current (DC) - −50 mA IBM peak base current single pulse; t p ≤ 1m s - −100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW TR2; NPN resistor-equipped transistor V CBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage positive - +40 V negative - −10 V I O output current - 100 mA ICM peak collector current single pulse; tp ≤ 1 ms - 100 mA Ptot total power dissipation Tamb ≤ 25 °C [1] - 200 mW Per device P tot total power dissipation - 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Table 7: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device R th(j-a) thermal resistance from junction to ambient in free air SOT363 [1] - - 416 K/W

Characteristics [1] Pulse test: tp ≤ 300 µs;δ≤ 0.02. Table 8: Characteristics Tamb =2 5°C unless otherwise speciﬁed. Symbol Parameter Conditions Min Typ Max Unit TR1; PNP low VCEsat transistor ICBO collector-base cut-off current VCB = −40 V; IE =0A - - −100 nA VCB = −40 V; IE =0A ; Tj= 150°C -- −50 µA IEBO emitter-base cut-off current VEB = −5 V; IC =0A - - −100 nA hFE DC current gain V CE = −2 V; IC = −10 mA 200 - - VCE = −2 V; IC = −100 mA [1] 150 - - VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - - −50 mV IC = −100 mA; IB = −5m A - - −130 mV IC = −200 mA; IB = −10 mA - - −200 mV IC = −500 mA; IB = −50 mA [1] -- −350 mV R CEsat collector-emitter saturation resistance IC = −500 mA; IB = −50 mA [1] - 440 700 m Ω VBEsat base-emitter saturation voltage VBEon base-emitter turn-on voltage fT transition frequency IC = −100 mA; VCE = −5V ; f = 100 MHz 100 300 - MHz C c collector capacitance VCB = −10 V; IE =ie =0A ; f=1M H z - - 10 pF TR2; NPN resistor-equipped transistor ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB =0A - - 1 µA VCE = 30 V; IB =0A ; Tj= 150°C -- 5 0 µA IEBO emitter-base cut-off current VEB =5V ; IC =0A - - 4 0 0 µA hFE DC current gain V CE =5V ; IC = 5 mA 30 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V ; IC = 100µA - 1.1 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC = 10 mA 2.5 1.8 - V R1 bias resistor 1 (input) 7 10 13 k Ω R2/R1 bias resistor ratio 0.8 1 1.2 C c collector capacitance VCB = 10 V; IE =ie =0A ; f=1M H z - - 2.5 pF

9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 5 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V VCE = −2V (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 1. TR1 (PNP): DC current gain as a function of collector current; typical values Fig 2. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values VCE = −2V (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C IC /IB =2 0 (1) Tamb = −55 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 3. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values Fig 4. TR1 (PNP): Base-emitter saturation voltage as a function of collector current; typical values 006aaa388 200 400 600 h FE IC (mA) (1) (2) (3) 006aaa390 IC (mA) −10−1 VCEsat (mV) −10−2 (1) (2) (3) 006aaa389 −500 −700 −300 −900 −1100 VBE (mV) −100 IC (mA) (1) (2) (3) 006aaa392 −0.5 −0.7 −0.3 −0.9 −1.1 VBEsat (V) −0.1 IC (mA) (1) (2) (3)

9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 6 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V Tamb =2 5°CI C /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −55 °C Fig 5. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values Fig 6. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Tamb =2 5°C (1) IC /IB = 100 (2) IC /IB =5 0 (3) IC /IB =1 0 Fig 7. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values Fig 8. TR1 (PNP): Collector-emitter saturation resistance as a function of collector current; typical values VCE (V) 006aaa394 −0.4 −0.6 −0.2 −0.8 IC (A) IB (mA) = −30 −12 −15 −27 −24 −21 −18 006aaa393 IC (mA) 102 103 R CEsat (Ω ) 10−1 (1) (2) (3) 006aaa391 IC (mA) −10−1 VCEsat (mV) −10−2 (1) (2) (3) 006aaa395 IC (mA) 102 103 R CEsat (Ω ) 10−1 (1) (2) (3)

9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 7 of 11 Philips Semiconductors PBLS4003Y; PBLS4003V VCE =5V (1) Tamb = 150°C (2) Tamb =2 5°C (3) Tamb = −40 °C IC /IB =2 0 (1) Tamb = 100°C (2) Tamb =2 5°C (3) Tamb = −40 °C Fig 9. TR2 (NPN): DC current gain as a function of collector current; typical values Fig 10. TR2 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb =2 5°C (3) Tamb = 100°C VCE =5V (1) Tamb = −40 °C (2) Tamb =2 5°C (3) Tamb = 100°C Fig 11. TR2 (NPN): On-state input voltage as a function of collector current; typical values Fig 12. TR2 (NPN): Off-state input voltage as a function of collector current; typical values IC (mA) 10-1 102101 006aaa034 102 103 hFE (1) (2) (3) IC (mA) 11 0 210 006aaa035 10-1 VCEsat (V) 10-2 (1) (2) (3) 006aaa036 IC (mA) 10−1 102101 VI(on) (V) 10−1 (2) (3) (1) 006aaa037 IC (mA) 10−2 10110−1 VI(off) (V) 10−1 (1) (2) (3)

Package outline 9. Packing information [1] For further information and the availability of packing methods, seeSection15. [2] T1: normal taping [3] T2: reverse taping Fig 13. Package outline SOT363 (SC-88) Fig 14. Package outline SOT666 04-11-08Dimensions in mm 0.25 0.10 0.3 0.2 pin 1 index 1.3 0.65 2.2 2.0 1.35 1.15 2.2 1.8 1.1 0.8 0.45 0.15 13 2 465 Dimensions in mm 04-11-08 1.7 1.5 1.7 1.5 1.3 1.1 0.18 0.08 0.27 0.170.5 pin 1 index 123 456 0.6 0.5 0.3 0.1 Table 9: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 4000 8000 10000 PBLS4003Y SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; T2[3] -125 - - -165 PBLS4003V SOT666 2 mm pitch, 8 mm tape and reel - - -315 - 4 mm pitch, 8 mm tape and reel - -115 - -

Revision history Table 10: Revision history Document ID Release date Data sheet statusChange notice Doc. number Supersedes PBLS4003Y_PBLS4003V_2 20050714 Product data sheet - 9397 750 15222 PBLS4003Y_ PBLS4003V_1 Modiﬁcations: • Table2: ’equivalent on-resistance’ renamed to ’collector-emitter saturation resistance’

Table8: ’equivalent on-resistance’ renamed to ’collector-emitter saturation resistance’
Figure4 and6: conditions amended
Figure6: ’equivalent on-resistance’ renamed to ’collector-emitter saturation resistance’
Figure8: ’equivalent on-resistance’ renamed to ’collector-emitter saturation resistance’
Figure7 and8: conditions amended
Table9: Packing method (2 mm pitch) for SOT666 added
Section 14 “Trademarks”: added PBLS4003Y_PBLS4003V_1 20041206 Product data sheet - 9397 750 13457 -

Philips Semiconductors PBLS4003Y; PBLS4003V 9397 750 15222 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 02 — 14 July 2005 10 of 11 11. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Deﬁnitions Short-form speciﬁcation —The data in a short-form speciﬁcation is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation. 13. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed. 14. Trademarks Notice —All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Deﬁnition I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips Semiconductors reserves the right to change the speciﬁcation in any manner without notice. II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

© Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 July 2005 Document number: 9397 750 15222 Published in The Netherlands Philips Semiconductors PBLS4003Y; PBLS4003V

Contents

Product Information

PBLS4003Y specifications and overview.

Summary

40 V PNP BISS loadswitch Rev. 02-14 July 2005

Description

40 V PNP BISS loadswitch Rev. 02-14 July 2005

Source title PBLS4003Y Datasheet(PDF) - NXP Semiconductors

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