PBSS4350Z_15 PHILIPS | Alldatasheet
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Technical content
Supersedes data of 2003 Jan 20
2003 May 13
50 V low VCEsat NPN transistor
ndbook, halfpage M3D087
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NXP Semiconductors Product data sheet
50 V low VCEsat NPN transistor PBSS4350Z
FEATURES
- Low collector-emitter saturation voltage
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- Higher efficiency leading to less heat generation
- Reduced PCB area requirements compared to DPAK.
APPLICATIONS
- Power management – DC/DC converters – Supply line switching – Battery charger – Linear voltage regulation (LDO).
- Peripheral drivers – Driver in low supply voltag e applications, e.g. lamps, LEDs – Inductive load driver, e.g. relays, buzzers, motors.
DESCRIPTION
NPN low VCEsat transistor in a SOT223 plastic package. PNP complement: PBSS5350Z. MARKING TYPE NUMBER MARKING CODE PBSS4350Z PB4350 PINNING PIN DESCRIPTION 1 base 2 collector 3 emitter 4 collector handbook, halfpage 4 123 MAM287Top view 2, 4 Fig.1 Simplified outline (SOT223) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT VCEO collector-emitter voltage 50 V ICM peak collector current 5 A RCEsat equivalent on-resistance <145 mΩ
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NXP Semiconductors Product data sheet In accordance with the Absolute Maximum Rating System (IEC 60134). Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 60 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) − 3 A ICM peak collector current − 5 A IBM peak base current − 1 A Ptot total power dissipation Tamb ≤ 25 °C; notes 1 and 3 − 1.35 W Tamb ≤ 25 °C; notes 2 and 3 − 2 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient in free air; notes 1 and 3 92 K/W in free air; notes 2 and 3 62.5 K/W
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NXP Semiconductors Product data sheet Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: t p ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 50 V; IE = 0 − − 100 nA VCB = 50 V; IE = 0; Tj = 150 °C − − 50 μA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 2 V; IC = 500 mA 200 − − VCE = 2 V; IC = 1 A; note 1 200 − − VCE = 2 V; IC = 2 A; note 1 100 − − VCEsat collector-emitter saturation voltage IC = 500 mA; IB = 50 mA − − 90 mV IC = 1 A; IB = 50 mA − − 170 mV IC = 2 A; IB = 200 mA; note 1 − − 290 mV RCEsat equivalent on-resistance IC = 2 A; IB = 200 mA; note 1 − 110 <145 mΩ VBEsat base-emitter saturation voltage IC = 2 A; IB = 200 mA; note 1 − − 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 1 A; note 1 − − 1.1 V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 100 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 30 pF
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NXP Semiconductors Product data sheet handbook, halfpage hFE IC (mA) 600 100 200 300 500 400 MGW175 10−1 11 0 1 0 2 103 104 (1) (2) (3) Fig.2 DC current gain as a function of collector current; typical values. VCE = 2 V. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage 0.2 IC (mA) VBE (V) 1.2 0.4 0.8 0.6 1.0 MGW176 10−1 11 0 1 0 2 103 104 (1) (2) (3) Fig.3 Base-emitter voltage as a function of collector-current; typical values. VCE = 2 V. (1) T amb = −55 °C. (2) T amb = 25 C. (3) T amb = 150 °C. handbook, halfpage IC (mA) 103 102 MGW181 10−1 11 0 1 0 2 103 104 VCEsat (mV) (1) (2) (3) Fig.4 Collector-emitter saturation as a function of collector current; typical values. IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C. handbook, halfpage IC (mA) 1.2 0.6 0.4 0.2 0.8 1.0 MGW178 10−1 11 0 1 0 2 103 104 VBEsat (V) (1) (2) (3) Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C.
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NXP Semiconductors Product data sheet handbook, halfpage (1) (2) (3) (4) (5) (6) (7) (8) (9) (10) (11) (12) 1200 1000 200 400 600 800 0.4 0.8 1.2 1.6 MGW179 VCE (V) IC (mA) Fig.6 Collector current as a function of collector-emitter voltage; typical values. (1) I B = 3.96 mA. (2) I B = 3.63 mA. (3) I B = 3.30 mA. (4) I B = 2.97 mA. (5) I B = 2.64 mA. (6) I B = 2.31 mA. (7) I B = 1.98 mA. (8) I B = 1.65 mA. (9) I B = 1.32 mA. (10) IB = 0.99 mA. (11) IB = 0.66 mA. (12) IB = 0.33 mA. VCE = 5 V. handbook, halfpage (4) (3) (2) (5) (6) (7) (8) (9) (10) 0.4 0.8 1.2 1.6 MGW180 VCE (V) IC (A) (1) Fig.7 Collector current as a function of collector-emitter voltage; typical values. VCE = 5 V. (1) I B = 150 mA. (2) I B = 135 mA. (3) I B = 120 mA. (4) I B = 105 mA. (5) I B = 90 mA. (6) I B = 75 mA. (7) I B = 60 mA. (8) I B = 45 mA. (9) I B = 30 mA. (10) IB = 15 mA. handbook, halfpage IC (mA) 103 102 10−1 10−2 MGW182 10−1 11 0 1 0 2 103 104 RCEsat (Ω) (1) (2) (3) Fig.8 Collector-emitter equivalent on-resistance as a function of collector current; typical values. IC/IB = 20. (1) T amb = 150 °C. (2) T amb = 25 °C. (3) T amb = −55 °C.
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NXP Semiconductors Product data sheet UNIT A 1 bp cD E e1 HE Lp Qy wv REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 0.10 0.01 1.8 1.5 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.10.2 DIMENSIONS (mm are the original dimensions) SOT223 SC-73 97-02-28 99-09-13 w Mbp D e A Lp Q detail X HE E v M A AB B c y 0 2 4 mm scale A X 13 2 Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT22 3
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NXP Semiconductors Product data sheet
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