PB1000G WTE | Alldatasheet
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Technical content
Features
! Glass Passivated Die Construction ! High Current Capability ! H i g h C a s e D i e l e c t r i c S t r e n g t h H ! H i g h S u r g e C u r r e n t C a p a b i l i t y J ! Ideal for Printed Circuit Board Application G + ~ ! Plastic Material has Underwriters Laboratory Flammability Classification 94V-O E A ~ - E Mechanical Data ! Case: Molded Plastic D C ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! P o l a r i t y : M a r k e d o n B o d y B ! Weight: 5.4 grams (approx.) A ! Mounting Position: Through Hole for #6 Screw ! Mounting Torque: 5.0 Inch-pounds Maximum ! Marking: Type Number Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol PB 1000G PB 1001G PB 1002G PB 1004G PB 1006G PB 1008G PB 1010G Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM VRWM VR 50 100 200 400 600 800 1000 V RMS Reverse Voltage V R(RMS) 35 70 140 280 420 560 700 V Average Rectified Output Current (Note 1) @TA = 45°C I O 10 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 180 A Forward Voltage (per element) @IF = 5.0A V FM 1.0 V P e a k R e v e r s e C u r r e n t @ TC = 25°C At Rated DC Blocking Voltage @TC = 125°C IR 5.0 500 µA I2t Rating for Fusing (t<8.3ms) (Note 2) I 2t 160 A 2s Typical Junction Capacitance (Note 3) C j 220 pF Typical Thermal Resistance (Note 4) R /G01JC 4.30 K/W Operating and Storage Temperature Range T j, TSTG -55 to +150 °C 2. Non-repetitive, for t > 1ms and < 8.3ms. 4. Thermal resistance junction to case per element. WTE POWER SEMICONDUCTORS KBPC-8 Dim Min Max A 18.54 19.56 B 6.35 7.60 C 19.00 — D 1.27 Ø Typical E 5.33 7.37 Hole for #6 screwG 3.60 4.00 H 12.20 13.20 J 2.38 x 45°C Typical All Dimensions in mm
0.01 0.1 1.0 0 0.4 0.8 1.2 1.6 I,FORW ARD CURR ENT (A) F V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, per element F T = 25°Cj Pulse width = 300µs 1.0 10 100 I,PEAK FO RW ARD SURGE CURREN T (A) F NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current Single half sine-wave JEDEC method T = 50°CC 120 160 200 240 0.01 0.1 1.0 04 0 8 0 1 2 0 I ,INS TANTAN EOUS REVERSE CURRENT R PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics, per element T = 25°Cj T = 100°Cj 30 60 90 120 150 I , A VERA GE FORW AR D OUTPUT CURREN T (A) AV T , AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve A Resistive or Inductive load PB1000G – PB1010G 2 of 3 © 2002 W on-Top Electronics
PB1000G – PB1010G 3 of 3 © 2002 Won-Top Electronics
ORDERING INFORMATION
Product No. Package Type Shipping Quantity PB1000G Square Bridge 200 Units/Box PB1001G Square Bridge 200 Units/Box PB1002G Square Bridge 200 Units/Box PB1004G Square Bridge 200 Units/Box PB1006G Square Bridge 200 Units/Box PB1008G Square Bridge 200 Units/Box PB1010G Square Bridge 200 Units/Box Shipping quantity given is for minimum packing quantity only. For minimum order quantity, please consult the Sales Department. Won-Top Electronics Co., Ltd (WTE) has checked all information carefully and believes it to be correct and accurate. However, W TE cannot assume any responsibility for inaccuracies. Furthermore, this information does not give the purchaser of semiconductor devices any license under patent rights to manufacturer. WTE reserves the right to change any or all information herein without further notice. WARNING: DO NOT USE IN LIFE SUPPORT EQUIPMENT. WTE power semiconductor products are not authorized for use as critical components in l ife support devices or systems without the express written approval. We power your everyday. Won-Top Electronics Co., Ltd. No. 44 Yu Kang North 3rd Road, Chine Chen Dist., Kaohsiung, Taiwan Phone: 886-7-822-5408 or 886-7-822-5410 Fax: 886-7-822-5417 Email: sales@wontop.com Internet: http://www.wontop.com