PAM2301 KODENSHI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 13
Technical content
Features
Efficiency up to 96% Only 40μA (typ) Quiescent Current Output Current: Up to 800mA Internal Synchronous Rectifier 1.5MHz Switching Frequency Soft Start Under-Voltage Lockout Short Circuit Protection Thermal Shutdown TSOT25 Pack age Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Pin Assignments
Applications
Cellular Phone Portable Electronics Wireless Devices Cordless Phone Computer Peripherals Battery-Powered Widgets Electronic Scales Digital Frame Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS ), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead- free/ for more information about Diodes Incorporated’s definitions of H alogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony- free "Green” products are defined as those which contain <900ppm bro mine, <900ppm chlorine (<1η00ppm total Br + Cl) and <1000ppm antimony compounds. TSOT25
Document number: DS36384 Rev. 3 - 2 2 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT Typical Applications Circuit Fixed Output Voltage Adjustable Output Voltage 2 R 1 R16 . 0V O Pin Descriptions Pin Number Pin Name Function 1 EN Enable Control Input. Force this pin voltage above 1.5V, enables the chip, and below 0.3V shuts down the device.
2 GND Ground
3 SW The drains of the internal main and synchronous power MOSFET.
4 VIN Power Supply
5 VOUT/FB
VOUT: Output voltage feedback pin, an internal resistive divider divides the output voltage down for comparison to the internal reference voltage. FB: Feedback voltage to internal error amplifier, the threshold voltage is 0.6V. Functional Block Diagram
Document number: DS36384 Rev. 3 - 2 3 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) These are stress ratings only and functional operation is not implied. E xposure to absolute maximum ratings for prolonged time periods may aff ect device reliability. All voltages are with respect to ground. Parameter Rating Unit Input Voltage -0.3 to +6.0 V EN, FB Pin Voltage -0.3 to VIN V SW Pin Voltage -0.3 to (VIN + 0.3) V Junction Temperature +150 ° C Storage Temperature Range -65 to +150 ° C Soldering Temperature +300, 5s ° C Recommended Operating Conditions (@TA = +25°C, unless otherwise specified.) Parameter Rating Unit Supply Voltage 2.5 to 5.5 V Operation Temperature Range -40 to +85 ° C Juntion Temperature Range -40 to +125 Thermal Information Parameter Symbol Max Unit Thermal Resistance (Junction to Case) șJC 130 °C/W Thermal Resistance (Junction to Ambient) șJC 250 Internal Power Dissipation PD 400 mW Electrical Characteristics (@TA = +25°C, VIN = 3.6V, VO = 1.8V, CIN = 10µF, L = 4.7µH unless otherwise specified.) Parameter Symbol Test Conditions Min Typ Max Units Input Voltage Range VIN - 2.5 - 5.5 V Regulated Feedback Voltage VFB - 0.588 0.600 0.612 V Reference Voltage Line Regulation ΔVFB - - 0.3 - %/V Regulated Output Voltage Accuracy VO IO = 100mA -3 - +3 % Peak Inductor Current IPK VIN = 3V,VFB = 0.5V or VO = 90% - 1.2 - A Output Voltage Line Regulation LNR VIN = 2.5V to 5V, IO = 10mA - 0.2 0.5 %/V Output Voltage Load Regulation LDR IO = 1mA to 800mA - 0.5 1.5 % Quiescent Current IQ No Load - 40 70 µ A Shutdown Current ISD VEN = 0V - 0.1 1.0 µ A Oscillator Frequency fOSC VO = 100% 1.2 1.5 1.8 MHz VFB = 0V or VO = 0V - 500 - kHz Drain-Source On-State Resistance RDS(ON) IDS = 100mA P MOSFET - 0.30 0.45 Ω N MOSFET - 0.35 0.50 Ω SW Leakage Current ILSW - - ±0.01 1 µ A High Efficiency Ș - - 96 - % EN Threshold High VEH - 1.5 - - V EN Threshold Low VEL - - - 0.3 V EN Leakage Current IEN - - ±0.01 - µ A Over Temperature Protection OTP - - +150 - ° C OTP Hysteresis OTH - - +30 - ° C
Document number: DS36384 Rev. 3 - 2 4 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT Typical Performance Characteristics (@TA = +25°C, CIN = 10µF, CO = 10µF, L = 4.7µH, unless otherwise specified.)
Document number: DS36384 Rev. 3 - 2 5 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT Typical Performance Characteristics (Cont.) (@TA = +25°C, CIN = 10µF, CO = 10µF, L = 4.7µH, unless otherwise specified.)
Document number: DS36384 Rev. 3 - 2 6 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT Typical Performance Characteristics (Cont.) (@TA = +25°C, CIN = 10µF, CO = 10µF, L = 4.7µH, unless otherwise specified.)
Document number: DS36384 Rev. 3 - 2 7 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT Typical Performance Characteristics (Cont.) (@TA = +25°C, CIN = 10µF, CO = 10µF, L = 4.7µH, unless otherwise specified.)
Document number: DS36384 Rev. 3 - 2 8 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT Typical Performance Characteristics (Cont.) (@TA = +25°C, CIN = 10µF, CO = 10µF, L = 4.7µH, unless otherwise specified.)
Document number: DS36384 Rev. 3 - 2 9 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT
Application Information
The basic PAM2301 application circuit is shown on Page 1. External component selection is determined by the load requirement, selecting L first and then CIN and COUT. Inductor Selection For most applications, the value of the inductor will fall in the range of 1μH to 4.7μH. Its value is chosen based on the des ired ripple current. Large value inductors lower ripple current and small value inductors result in higher ripple currents. Higher V IN or VOUT also increases the ripple current as shown in Equation 1. A reasonable starting point for setting ripple current is ΔIL = 320mA (40% of 800mA). V V1VL f IN OUT OUTL Equation 1 The DC current rating of the inductor should be at least equal to the maximum load current plus half the ripple current to prevent core saturation. Thus, a 1120mA rated inductor should be enough for most ap plications (800mA + 320mA). For better efficiency, choose a low DC-resistance inductor. CIN and COUT Selection In continuous mode, the source current of the top MOSFET is a square wave of duty cycle V OUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: V VVVIIrequiredC IN OUTINOUT OM AXRM SIN This formula has a maximum at V IN = 2VOUT, where IRMS =IOUT/2. This simple worst-case condition is commonly used for des ign because even significant deviations do not offer much relief. Note that the capacitor manufacturer's ripple current ratings are often based on 2000 hours of life. This makes it advisable to further derate the capacitor, or choose a capacitor rated at a higher temperature than required. Consult the manufacturer if there is any question. The selection of COUT is driven by the required effective series resistance (ESR). Typically, once the ESR requirement for C OUT has been met, the RMS current rating generally far ex ceeds the I RIPPLE (P-P) requirement. The output ripple VOUT is determined by: 1ESRIV OUT LOUT Where f = operating frequency, COUT = output capacitance and ΔIL = ripple current in the inductor. For a fixed output voltage, the output ripple is highest at maximum input voltage since ΔIL increases with input voltage. Using Ceramic Input and Output Capacitors Higher values, lower cost ceramic capacitors are now becoming available in smaller case sizes. Their high ripple current, high voltage rating and low ESR make them ideal for switching regulator applications. Using ceramic capacitors can achieve very low output ripple and small circuit size. When choosing the input and output ceramic capacitors, ch oose the X5R or X7R dielectric formulations. These dielectrics ha ve the best temperature and voltage characteristics of all the ceramics for a given value and size. Setting the Output Voltage The internal reference is 0.6V (Typical). The output voltage is calculated as below: The output voltage is given by Table 1. Table 1: Resistor selection for output voltage setting. VO R1 R2 1.2V 100k 100k 1.5V 150k 100k 1.8V 200k 100k 2.5V 380k 120k 3.3V 540k 120k 2 R 1 R16 . 0V O
where RDS(ON) = P-Channel Switch ON Resistance, I = Output Current, R = Inductor DC Resistance. The reference and the circuit remain reset until the VIN crosses its UVLO threshold. P-Channel current limit (1500mA). with a frequency of 400kHz and minimum duty cycle, therefore the average input current is typically 200mA.
- The power traces, consisting of the GND trace, the SW trace and the VIN trace should be kept short, direct and wide.
- Does the VFB pin connect directly to the feedback resistors? The resistive divider R1/R2 must be connected between the (+) plate of C and
- Does the (+) plate of CIN connect to VIN as closely as possible? This capacitor provides the AC current to the internal power MOSFETs.
- Keep the switching node, SW, away from the sensitive VFB node.
- Keep the (–) plates of CIN and COUT as close as possible.
Figure 1. PAM2301 Suggested Layout
Document number: DS36384 Rev. 3 - 2 11 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT
Ordering Information
B: 5 Number of PinsOutput Current C: 800mA A: Type 1. EN 2. GND 3. SW 4. VIN 5. VOUT/FB Package Type A: TSOT25 Output Voltage 330: 3.3V 280: 2.8V 250: 2.5V 180: 1.8V 150: 1.5V 120: 1.2V ADJ: Adj Part Number Output Voltage (V) Part Mark Package (Note 5) 7’’ Tape & Reel Quantity Status (Note 4) PAM2301CAAB330 3.3 BAKYW TSOT25 3000 In production PAM2301CAAB120 1.2 BABYW TSOT25 3000 In production PAM2301CAABADJ ADJ BAAYW TSOT25 3000 In production 5. For packaging details, go to our website at https://www.diodes.com/design /support/packaging/diodes-packaging/. Marking Information TSOT25
Document number: DS36384 Rev. 3 - 2 12 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT Package Outline Dimensions (All dimensions in mm.) Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT25 Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. TSOT25 Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 D E1/2 E E/2 e A Seating Plane0 L Gauge Plane 01( 4x) 01( 4x) c b Seating Plane C X Y TSOT25 Dim Min Max Typ A - 1.00 - A1 0.01 0.10 - A2 0.84 0.90 - b 0.30 0.45 - c 0.12 0.20 - D - - 2.90 E - - 2.80 E1 - - 1.60 e 0.95 BSC e1 1.90 BSC L 0.30 0.50 - L2 0.25 BSC θ 0° 8° 4° θ1 4° 12° - All Dimensions in mm
Document number: DS36384 Rev. 3 - 2 13 of 13 www.diodes.com February 2018 © Diodes Incorporated PAM2301 NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRES S OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF ME RCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, correct ions or other changes without further notice to this document and any produ ct described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product des cribed herein; neither does Diodes Incorporated convey a ny license under its patent or trademark rights, nor the rights of others. Any Custom er or user of this document or products described her ein in such applications shall assume all risks of such use and will agree to hold Diodes Incorpo rated and all the companies whose products are repres ented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Pro duct names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated in to multiple languages for reference. Only the English vers ion of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support dev ices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perfor m when properly used in accordance with instructions for u se provided in the labeling can be reasonably expected to result in signi ficant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their lif e support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-criti cal, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorpo rated. Further, Customers must fully indemnify Diodes Incor porated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2018, Diodes Incorporated www.diodes.com