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Technical content

30‐40GHz, Solid State Power Amplifier MtronPTI P/N: PA3111V1 20160615

FEATURES

Class AB linear GaAsFET hybrid design Instantaneous wide bandwidth Suitable for all modulations standards Built‐in protection circuits High reliability and ruggedness ELECTRICAL SPECIFICATIONS Parameter Specification Notes Operating Frequency Range 30.0 ‐ 40.0 GHz Power Output Psat 7 Wat t Min / 8 Watt Typ Power Output @ P1dB 6 Watt Typ Power Gain 40 dB Min Power Gain Flatness 4.0 dB p ‐p Max Constan t input power Input / Output Return Loss 10 dB Min Relative to 50 Ohm Noise Figure 12 dB Max Harmonics >20 dBc At rated Pout Non Harmonics Spurious >60 dBc Min Operating Voltage 9 VDC Nom Current Consumption 30 Amp Typ At rated Pout Max Input Power 0 dBm Max Without damage Load VSWR Protection 5 : 1 ENVIRONMENTAL CHARACTERISTICS Parameter Specification Notes Operating Case Temperature ‐20 to +65 °C Storage Temperature ‐40 to +85 °C Relative Humidity 5 to 95 % Non Condensation MECHANICAL SPECIFICATIONS Parameter Specification Notes Dimensions 170 X 180 X 27 mm Excluding Connectors Weight 1.5kg RF Connectors In/Out SMA K Typefemale DC Power / Interface Connector 7‐Pin Hybrid D‐Sub Cooling External Heatsink Forced air required D‐SUB CONNECTOR PIN ASSIGNMENT Pin Function Description

1 N/C Reserved

2 N/C Reserved

3 CURRENT SENSOR I D @ 20mV/100mA Typ

4 TEMP SENSOR VT @ 10mV/C + 500mV Typ

5 SHUTDOWN TTL

30‐40GHz, Solid State Power Amplifier MtronPTI P/N: PA3111V1 20160615 A1 VDD 9VDC A2 GND Ground OUTLINE DRAWING