PA2003 MA-COM | Alldatasheet

Document overview

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Technical content

Features

  • LOW NOISE FIGURE: 2.7 dB (TYP.)
  • GAIN: 21 dB (TYP.)
  • HIGH P1dB: +32.5 dBm (TYP.)
  • HIGH IP3: +46 dBm (TYP.)
  • BROADBAND RESPONSE: 1.5 GHz TO 2.2 GHz (TYP.)

Description

The PA2003 is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability. This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with low noise figure. The model is particularly suited for power driver applications used in the base station & repeater infrastructure, and for commercial & military radios. Electrical Specifications: Z0 = 50Ω, VCC = +12 VDC Parameter Units Typical Gurarnteed 25ºC 0ºC to +70ºC Frequency MHz 1800-2000 1800-2000 Small Signal Gain (min) dB 21.3 19.0 Gain Flatness (max) dB + 0.25 + 0.5 Noise Figure (max) dB 2.7 3.3 Reverse Isolation dB 37.0 Power Output Output IP3 dBm +46.0 DC Current @ +12 Volts (max.) mA 495 520 Product Image Absolute Maximum Ratings Parameter Absolute Maximum Storage Temperature -40ºC to +85ºC Operation Base Temperature +70ºC Max. DC Voltage +15 Vdc Max. Continuous RF Input Power +15 dBm

Ordering Information

PA2003 Flange Mount Carrier Thermal Data: VCC = +12 VDC Parameter Rating Thermal Resistance θjc 22ºC/W Junction Temperature Rise Above Case Tjc 51ºC

Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Ultra Linear Driver Amplifier 1800 to 2000 MHz Rev. V4 PA2003 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. GAIN 20.0 21 .0 22.0 FREQUENCY - GHz Gain - dB VSWR 1. 0 1. 5 2.0 2.5 FREQUENCY - GHz Input VS WR Output VSWR VSWR NOISE FIGURE 2.5 2.7 2.9 FREQUENCY - GHz Noise Figure - dB POWER OUTPTUT* 31 .0 32.0 33.0 FREQUENCY (GHZ) Power Output - dBm @ 1.0 dB Gain Compression THIRD ORDER INTERCEPT POINT* 44.0 45.0 46.0 47.0 FREQUENCY (GHZ) Intercept Point - dBm * Output Pow er = +15 dBm Typical Performance Curves at +25°C Outline Drawing: Flange Mount Carrier * M/A-COM STD. OUTLINE PIN# FUNCTION

1 RF IN

2 GROUND

3 Vcc

4 GROUND

5 RF OUT

1.70 1.45 1.06 .56 .08 MIN. .12 .15 .10 x 45o (4 CORNERS) .725 .42 .09 .010 TYP. .02 TYP. .20 TYP. .46 .23 PIN PIN PIN PIN PIN 1 2 3 4 5 ∗ Dimensions are inches + 0.015 unless otherwise specified.