PA2001 MA-COM | Alldatasheet
Document overview
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Technical content
Features
- LOW NOISE FIGURE: 2.0 dB (TYP.)
- GAIN: 21 dB (TYP.)
- HIGH P1dB: +30.3 dBm (TYP.)
- HIGH IP3: +46.5 dBm (TYP.)
- BROADBAND RESPONSE: 1.5 GHz TO 2.2 GHz (TYP.)
Description
The PA2001 is a is a discrete hybrid design, which uses thick film solder manufacturing processes for accurate performance and high reliability. This 2 stage GaAS FET transistor design uses feedback loops for flat broadband linear performance, with very low noise figure. The model is particularly suited for power driver applications used in the base station & repeater infrastructure, and for commercial & military radios. Electrical Specifications: Z0 = 50Ω, VCC = +12 VDC Parameter Units Typical Gurarnteed 25ºC 0ºC to +85ºC Frequency MHz 1800-2000 1800-2000 Small Signal Gain (min) dB 21.0 19.0 Gain Flatness (max) dB + 0.2 + 0.4 Noise Figure (max) dB 2.0 3.5 Reverse Isolation dB 37.0 Power Output Output IP3 dBm +46.5 +43.0 DC Current @ +12 Volts (max.) mA 345 400 Product Image Absolute Maximum Ratings Parameter Absolute Maximum Storage Temperature -40ºC to +85ºC Operation Base Temperature +85ºC Max. DC VOltage +15 Vdc Max. Continuous RF Input Power +15 dBm Outline Drawing: Flange Mount Carrier * ∗ Dimensions are inches + 0.015 unless otherwise specified.
Ordering Information
PA2001 Flange Mount Carrier Thermal Data: VCC = +12 VDC Parameter Rating Thermal Resistance θjc 22ºC/W Junction Temperature Rise Above Case Tjc 51ºC M/A-COM STD. OUTLINE PIN# FUNCTION
1 RF IN
2 GROUND
3 Vcc
4 GROUND
5 RF OUT
1.70 1.45 1.06 .56 .08 MIN. .12 .15 .10 x 45o (4 CORNERS) .725 .42 .09 .010 TYP. .02 TYP. .20 TYP. .46 .23 PIN PIN PIN PIN PIN 1 2 3 4 5