P850-G

P500-G BOURNS | Alldatasheet

Document overview

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Technical content

Features

■ Formerly brand ■ Extremely high speed performance ■ Blocks high voltages and currents ■ Two TBU™ protectors in one small package ■ Simple, superior circuit protection ■ Minimal PCB area ■ RoHS compliant*, UL Recognized

Applications

■ POTS linecards ■ VolP equipment ■ Voice and data combo linecards ■ ONU, ONT ■ Gateways ■ Cable and DSL modems TBU ™ P500-G and P850-G Protectors *RoHS COMPLIANT *RoHS Directive 2002/95/EC Jan 27 2003 including Annex. Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications Transient Blocking Units - TBU™ Devices Bourns® Model P500-G and P850-G TBU™ products are high speed, surge protection components designed to protect Subscriber Line Interface Circuits (SLICs) against transients caused by AC power cross, induction and lightning surges. The TBU ™ device blocks surges and provides an effective barrier behind which sensitive electronics are not exposed to large voltages or currents during surge events. Electrical Characteristics (Tamb = 25 °C) The P-G series TBU™ devices are bidirectional; specifi cations are valid in both directions. Symbol Parameter Min. Typ. Max. Unit Iop Maximum current through the device that will not cause current blocking P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH 100 200 100 200 mA I trigger Typical current for the device to go from normal operating state to protected state P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH 150 275 150 275 mA I out Maximum current through the device P500-G120-WH P500-G200-WH P850-G120-WH P850-G200-WH 200 400 200 400 mA R TBU Series resistance of the TBU™ device 50 55 Ω Rbal Line-to line series resistance difference between two TBU™ devices 2 Ω tblock Maximum time for the device to go from normal operating state to protected state 1µ s Iquiescent Current through the triggered TBU™ device with 50 Vdc circuit voltage 0.7 mA Vreset Voltage below which the triggered TBU™ device will transition to normal operating state 22 V Absolute Maximum Ratings (Tamb = 25 °C) Symbol Parameter Value Unit Vimp Maximum protection voltage for impulse faults with rise time ≥ 1 µsec P500-Gxxx-WH P850-Gxxx-WH 500 850 V Vrms Maximum protection voltage for continuous Vrms faults P500-Gxxx-WH P850-Gxxx-WH 300 425 V Top Operating temperature range -40 to +85 °C Tstg Storage temperature range -65 to +150 °C Agency Approval UL recognized component File # E315805. Industry Standards Description Model Telcordia GR-1089 Port Type 2, 4 P500-G Port Type 3, 5 P850-G

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications Typical Performance Characteristics TBU™ P500-G and P850-G Protectors V-I Characteristics Time to Block vs. Fault Current Trigger Current Temperature -Itrigger Vreset -Vreset Itrigger 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.1 1 10 100 1000 Fault Current (A) Time to Block (sec) 100 120 140 -40 -20 0 20 40 60 80 Temperature (°C) % of Trigger Current

TBU™ P500-G and P850-G Protectors Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications Operational Characteristics P500-G Lightning, 500 V P850-G Lightning, 850 V The graphs below demonstrate the operational characteristics of the TBU™ device. For each graph the fault voltage, protected side voltage, and current is presented. P500-G Power Fault, 120 Vrms, 25 A P850-G Power Fault, 230 Vrms, 25 A Pxxx-G Equipment V1 V2Tip Ring TEST CONFIGURATION DIAGRAM 1 µs/div. 100 V/div. 400 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 1 µs/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 4 ms/div. 100 V/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 4 ms/div. 100 V/div. 200 mA/div. Ch1 V1 Ch2 V2 Ch3 Current

6&6 A 4&4 A 1&1 A 3&3 A 6 4 1 3 PIN 1 A B D C 4 64A 6A5 3 13A 1A2 EE J J N N H H M G G K F K LL TOP VIEW SIDE VIEW BOTTOM VIEW PIN 1 A B D C E JJ N N H M E K K F TOP VIEW SIDE VIEW BOTTOM VIEW Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications TBU™ P500-G and P850-G Protectors Product Dimensions DIMENSIONS: MM (INCHES) Dim. P500-G P850-G A 3.40 (.139) 4.00 (.157) 4.10 (.161) 3.40 (.139) 4.00 (.157) 4.10 (.161) B 5.90 (.232) 6.00 (.236) 6.10 (.240) 8.15 (.321) 8.25 (.325) 8.35 (.329) C 0.80 (.031) 0.85 (.033) 0.90 (.035) 0.80 (.031) 0.85 (.033) 0.90 (.035) D 0.000 (.000) 0.025 (.001) 0.050 (.002) 0.000 (.000) 0.025 (.001) 0.050 (.002) E 1.15 (.045) 1.25 (.049) 1.35 (.053) 1.15 (.045) 1.25 (.049) 1.35 (.053) F 1.05 (.041) 1.15 (.045) 1.25 (.049) 1.05 (.041) 1.15 (.045) 1.25 (.049) G- - - - - - 0.725 (.029) 0.825 (.032) 0.925 (.036) H 1.10 (.043) 1.20 (.047) 1.30 (.051) 1.10 (.043) 1.20 (.047) 1.30 (.051) J 0.375 (.015) 0.425 (.017) 0.475 (.019) 0.375 (.015) 0.425 (.017) 0.475 (.019) K 0.70 (.028) 0.75 (.030) 0.80 (.031) 0.25 (.010) 0.30 (.012) 0.35 (.014) L- - - - - - 0.70 (.028) 0.75 (.030) 0.80 (.031) M 0.70 (.028) 0.75 (.030) 0.80 (.031) 0.70 (.028) 0.75 (.030) 0.80 (.031) N 0.375 (.015) 0.425 (.017) 0.475 (.018) 0.375 (.015) 0.425 (.017) 0.475 (.018) Recommended Pad Layout Pad # Apply

1 Tip In

3 Tip Out

4 Ring Out

6 Ring In

NC = Solder to PCB; do not make electrical connection, do not connect to ground. Pad DesignationTBU™ devices have matte-tin termination fi nish. Suggested layout should use non-solder mask opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking any power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For mini- mum parasitic capacitance, do not allow any signal, ground or power signals beneath any of the pads of the device. P500-Gxxx P850-Gxxx Pads 1A and 1 are internally connected; the same for pads 3A with 3, 4A with 4, and 6A with 6. This allows for one PCB layout to accommodate the P500 or P850. P500-Gxxx P850-Gxxx 1.225 (.048) 0.75 (.030) 1.15 (.045) 1.275 (.050) 0.375 (.015) 1.225 (.048) 1.25 (.049) 0.85 (.033) 0.30 (.012) 0.75 (.030) 1.15 (.045) 0.375 (.015) Pad # Apply Pad # Apply 1A Tip In 4A Ring Out

1 Tip In 4 Ring Out

3 Tip Out 6 Ring In

NC = Solder to PCB; do not make electrical connection, do not connect to ground. Pad Designation Block Diagram P500-Gxxx P850-Gxxx

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications TBU™ P500-G and P850-G Protectors Thermal Resistances Part # Symbol Parameter Value Unit P500-G R th(j-a) Junction to leads (package) 113 °C/W Junction to leads (per TBU™ device) 236 °C/W P850-G R th(j-a) Junction to leads (package) 119 °C/W Junction to leads (per TBU™ device) 215 °C/W Refl ow Profi le Profi le Feature Pb-Free Assembly Average Ramp-Up Rate (Tsmax to Tp) 3 °C/sec. max. Preheat - Temperature Min. (Tsmin) - Temperature Max. (Tsmax) - Time (tsmin to tsmax) 150 °C 200 °C 60-180 sec. Time maintained above: - Temperature (TL) - Time (tL) 217 °C 60-150 sec. Peak/Classifi cation Temperature (Tp) 260 °C Time within 5 °C of Actual Peak Temp. (tp) 20-40 sec. Ramp-Down Rate 6 °C/sec. max. Time 25 °C to Peak Temperature 8 min. max.

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications 3312 - 2 mm SMD Trimming Potentiometer TBU™ P500-G and P850-G Protectors Typical Part MarkingHow to Order P 500 - G 120 - WH __ Form Factor P = Two TBU ™ protectors in one device Impulse Voltage Rating 500 = 500 V 850 = 850 V Directional Indication for Paired Devices G = Bidirectional Iop Indicator 120 = 100 mA 200 = 200 mA Packaging Indicator Blank = Packaged in tape and reel (3000 pieces per reel) X = Packaged in tubes Packaging Specifi cations (per EIA468-B) B A D C N F G (MEASURED AT HUB) USER DIRECTION OF FEED CENTER LINES OF CAVITY EMBOSSMENT t D TOP COVER TAPE E W P DIMENSIONS: MM (INCHES) Device A B C D G N P500-G, P850-G 326 (12.835) 330.25 (13.002) 1.5 (.059) 2.5 (.098) 12.8 (.504) 13.5 (.531) 20.2 (.795) - 16.5 (.650) 102 (4.016) Device A0 B 0 D D 1 E F P500-G 4.2 (.165) 4.4 (.173) 6.2 (.244) 6.4 (.252) 1.5 (.059) 1.6 (.063) 1.5 (.059) - 1.65 (.065) 1.85 (.073) 5.4 (.213) 5.6 (.220) P850-G 4.2 (.165) 4.4 (.173) 8.45 (.333) 8.65 (.341) 1.5 (.059) 1.6 (.063) 1.5 (.059) - 1.65 (.065) 1.85 (.073) 7.4 (.291) 7.6 (.299) Device K0 P P 0 P 2 t W P500-G 1.0 (.039) 1.2 (.047) 7.9 (.311) 8.1 (.319) 3.9 (.159) 4.1 (.161) 1.9 (.075) 2.1 (.083) 0.25 (.010) 0.35 (.014) 11.7 (.461) 12.3 (.484) P850-G 1.1 (.043) 1.3 (.051) 7.9 (.311) 8.1 (.319) 3.9 (.159) 4.1 (.161) 1.9 (.075) 2.1 (.083) 0.25 (.010) 0.35 (.014) 15.7 (.618) 16.3 (.642) MARKING NUMBER 50GA = P500-G120-WH 50GB = P500-G200-WH 85GA = P850-G120-WH 85GB = P850-G200-WH MANUFACTURING DATE CODE MANUFACTURER’S TRADEMARK* PIN 1 *TRANSITION FROM FULTEC TRADEMARK TO BOURNS TRADEMARK IN 2009.

Specifi cations are subject to change without notice. Customers should verify actual device performance in their specifi c applications 3312 - 2 mm SMD Trimming Potentiometer 500 ns/div. 100 V/div. 400 mA/div. Ch1 V1 Ch2 V2 Ch3 Current 500 ns/div. 100 V/div. 400 mA/div. Ch1 V1 Ch2 V2 Ch3 Current Pxxx-G -VREF Equipment MOVs or GDTs V1 V2 TBU™ P500-G and P850-G Protectors Reference Designs A cost-effective protection solution combines the Bourns® TBU™ protection device with a pair of MOVs or Bourns® GDTs and a diode bridge. The diagram below illustrates a common confi guration of these components. The graphs to the right demonstrate the operational characteristics of the circuit. Common Confi guration Diagram P500-G Solution: 5000 V Lightning 2/10 µsec, 500 A Asia-Pacifi c: Tel: +886-2 2562-4117  Fax: +886-2 2562-4116 Europe: Tel: +41-41 768 5555  Fax: +41-41 768 5510 The Americas: Tel: +1-951 781-5500  Fax: +1-951 781-5700 www.bourns.com COPYRIGHT©2008, BOURNS, INC. LITHO IN U.S.A. e 12/08 FU0801 REV. 12/08 P850-G Solution: 4000 V Lightning 10/700 µsec, 100 A P500-G Confi guration (GR-1089 Intra-building and 5 kV Lightning) Product Qty. Part Number Source TBU™ Device 1 P500-Gxxx-WH Bourns, Inc. MOV 2 CNR-10D201K GNR10D201K CNR Centra Science Ceramate Technical Diode bridge 2 GSD2004S-V MMBD2004S Vishay Diodes Inc. Product Qty. Part Number Source TBU™ Device 1 P850-G120-WH Bourns, Inc. MOV 2 CNR-10D361K GNR10D361K CNR Centra Science Ceramate Technical Diode bridge 2 GSD2004S-V MMBD2004S Vishay Diodes Inc.