P841

TLP841 TOSHIBA | Alldatasheet

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TOSHIBA Photointerrupter In frared LED + Phototransistor TLP841 Copiers, Printers and Fax Machines VCRs and CD Players Various Position Detection Sensor The TLP841 is photointerrupter which consists of a GaAs infrared LED and an Si phototransistor. With gap width as wide as 5mm, it is a compact package.

• Compact package: 7.5(w)×6.3(h)×2.6(d)mm
• Printed wiring board direct mounting type (with a locating pin)
• Board thickness: 1.6mm or less
• Gap width: 5 mm
• Resolution: Slit width = 0.5 mm
• Current transfer ratio: I C/IF = 2.5% (min)
• High response speed: tr, tf = 15μs (typ.)
• Material of the package: Polybutylene terephthalate (UL94V-0) Absolute Maximum Ratings (Ta = 2 5 ° C ) M a r k i n g ( N o t e 2 ) Characteristics Symbol Rating Unit Forward current IF 30 mA Forward current derating (Ta>25°C) ΔIF/°C −0.33 mA/°C LED Reverse voltage VR 5 V Collector-emitter voltage VCEO 35 V Emitter-collector voltage VECO 5 V Collector power dissipation PC 75 mW Collector power dissipation derating (Ta>25 ℃) ΔPC/°C −1 mW/°C Detector Collector current IC 50 mA Operating temperature range Topr −30 to 85 °C Storage temperature range Tstg −40 to 100 °C Soldering temperature (5s) (Note 1) T sol 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: At least 1.5mm from body Note 2: Weekly code: (Three digits) TOSHIBA 11-8A1 Weight: 0.1 g (typ.) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Weekly code P841 Product No.

Characteristics Symbol Min Typ. Max Unit Supply voltage VCC ⎯ 5 24 V Forward current IF ⎯ ⎯ 20 mA Operating temperature range Topr −10 ⎯ 75 °C Optical and Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test conditions Min Typ. Max Unit Forward voltage VF I F = 10 mA 1.00 1.23 1.40 V Reverse current IR V R = 5 V ⎯ ⎯ 10 μA LED Peak emission wavelength λP I F = 10 mA ⎯ 940 ⎯ nm Dark current ID (ICEO) V CE = 24 V, IF = 0 ⎯ ⎯ 0.05 μA Detector Peak sensitivity wavelength λP ⎯ ⎯ 820 ⎯ nm Current transfer ratio IC/IF V CE = 2 V, IF = 10 mA 2.5 ⎯ 50 % Collector-emitter saturation voltage VCE (sat) I F = 20 mA, IC = 0.25 mA ⎯ 0.1 0.4 V Rise time tr ⎯ 15 50 Coupled Fall time tf VCE = 5 V, IC = 1 mA, RL = 1 kΩ (Note 3) ⎯ 15 50 μs Note 3 : Switching time measurement circuit and waveform Precautions

• When removing flux with chemicals after soldering, clean only the leads on the soldering side; do not dip the whole package for cleaning. Chemicals remaining on an LED or photo transistor light emitter or receiver, if any, would have a bad influence to the optical characteristics and it may severely lower the conversion efficiency.
• Care must be taken in relation to the environment in which the device is to be installed. Oil or chemicals may cause the package to melt or crack.
• The device should be mounted on an unwarped surface.
• Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. I C/IF (t) IC/IF (0) = Po (t) Po (0) VCC VOUT RL IF VOUT IF tr 90% 10% tf td ts

Package Dimensions: TOSHIBA 11-8A1 Weight : 0.1g (typ.) Pin Connection Unit: mm ( ): Reference value Tolerances are listed below unless otherwise specified. Dimensions Tolerance 4 mm or less ±0.1 Greater then 4 mm ±0.2 Slit width Center of sensor 1: Anode 2: Cathode 3: Collector 4: Emitter

0.5 1.5 2.5 3.5 02468 1 0 1 2 0.1 100 11 0 1 00 0.001 0.01 0.1 1 10 100 IC –VCE (typ.) Collector current I C ( m A ) Collector-emitter voltage V CE (V) Ta = 25°C 20 IF = 5 mA IC – IF (typ.) Forward current I F ( m A ) Collector current I C ( m A ) Ta = 25°C : VCE = 2 V : VCE = 0.4 V Sample 2 Sample 1 IC/IF – IF (typ.) Forward current I F ( m A ) Current transfer ratio I C/IF (%) Sample 2 Sample 1 Ta = 25°C : VCE = 2 V : VCE = 0.4 V 02 0 4 0 6 0 8 0 1 0 0 0 2 04 06 08 0 1 0 0 IF – Ta Ambient temperature Ta (°C) Allowable forward current I F (mA) PC – Ta Ambient temperature Ta (°C) Allowable collector power dissipation PC ( m W ) 100 Forward voltage V F ( V ) Forward current I F ( m A ) Ta = 75°C 50 25 −25 I F – VF (typ.)

0.1 100 1000 0.1 1 10 100 0.2 0.4 0.6 0.8 1.2 -40 -20 0 20 40 60 80 100 R e l a t i v e IC – T a ( t y p . ) Ambient temperature Ta (°C) Relative collector current 0.00 0.04 0.08 0.12 0.16 0.20 -40 -20 0 20 40 60 80 100 V CE (sat) – T a ( t y p . ) Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) 0.00001 0.0001 0.001 0.01 0.1 100 0 20 40 60 80 100 120 Ambient temperature Ta (°C) Dark current I D (ICEO) (μ A) I D (ICEO) – Ta (typ.) Switching characteristics (non saturated operation) (typ.) Load resistance R L ( k Ω) Switching time ( μs) tr, tf td ts 100 1000 1 10 100 Switching characteristics (saturated operation) (typ.) Load resistance R L ( k Ω) Switching time ( μs) tr ts tf td VCE = 2V IF = 20mA IF = 10mA IF = 5mA VCE = 24V IC = 0.25mA IF = 20mA Ta = 25°C IF = 20mA VCC = 5V VOUT ≧ 4.65V Ta = 25°C VCC = 5V VOUT = 1V

Relative Positioning of Shutter and Device For normal operation, position the shutter and the device as shown in the figure below. By considering the device's detection direction characteristic and switching time, determine the shutter slit width and pitch. 0.2 0.4 0.6 0.8 1.2 23456789 0.2 0.4 0.6 0.8 1.2 -3 -2 -1 0 1 2 3 4 Detection position characteristics (1) (typ.) Relative collector current Distance d (mm) IF = 10 mA VCE = 2 V Ta = 25°C Detection position d = 0 ± 0.3 mm 0 + − d Shutter Distance d (mm) Relative collector current Detection position characteristics (2) (typ.) IF = 10 mA VCE = 2 V Ta = 25°C Detection position d = 5 . 1 m m d Shutter + 0.6 − 0.95 A Shutter 4.15 max 5.1 5.7 min Center of sensor Unit: mm Cross section between A and A'

RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collect ively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduc ed without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
• Product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document.
• Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
• Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
• The information contained herein is pres ented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
• A BSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
• GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
• Do not use or otherwise make available Product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations.

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