PJP75N75_07 PANJIT | Alldatasheet

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PAGE . 1STAD-JUN.11.2007 PJP75N75

FEATURES

  • RDS(ON) , VGS @10V,IDS @30A=11m Ω  Advanced Trench Process Technology  High Density Cell Design For Ultra Low On-Resistance  Specially Designed for Converters and Power Motor Controls  Fully Characterized Avalanche Voltage and Current  In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA  Case: TO-220AB Molded Plastic  Terminals : Solderable per MIL-STD-750,Method 2026  Marking : P75N75 75V N-Channel Enhancement Mode MOSFET Maximum RATINGS and Thermal Characteristics (TA =25O C unless otherwise noted ) Note: 1. Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE Gate Drain Source RETEMARAPl obmySt imiLs tinU egatloVecruoS-niarDV SD 57V egatloVecruoS-etaGV SG + 02V tnerruCniarDsuounitnoCI D 57A tnerruCniarDdesluP )1 I MD 053A noitapissiDrewoPmumixaM TA 52= O C TA 57= O C P D 501 5.26 W egnaRerutarepmeTegarotSdnanoitcnuJgnitarepO TJ T, GTS 051+ot55- O C esluPelgniShtiwygrenEehcnalavA I SA Hm3.0=L,V5.73=DDV,A74= E SA 066J m ecnatsiseRlamrehTesaC-ot-noitcnuJR θ CJ 2.1 O W/C )detnuomBCP(ecnatsiseRlamrehTtneibmAot-noitcnuJ 2 Rθ AJ 26 O W/C

PAGE . 2STAD-JUN.11.2007 PJP75N75 ELECTRICAL CHARACTERISTICS ( TA=25O C unless otherwise noted ) VDD VOUT VIN RG RL Switching Test Circuit Gate Charge Test Circuit VDD VGS RG RL 1mA retemaraPl obmySn oitidnoCtseT. niM. pyT. xaMs tinU citatS gatloVnwodkaerBecruoS-niarDe VB SSD V SG I,V0= D Au052= 57- - V egatloVdlohserhTetaGV )ht(SG V SD V= SG I, D Au052= 1-3V etatS-nOecruoS-niarD ecnatsiseR R )no(SD V SG I,V01= D A03= -0 .81 1 mΩ V SG I,V01= D 521=cT,A03= O C -- 0 2 niarDegatloVetaGoreZ tnerruC I SSD V SD V,V57= SG V0= --1 Au V SD V,V57= SG 521=cT,V0= O C -- 0 1 egakaeLydoBetaGI SSG V SG =+ V,V02 SD V0= -- + 001n Α ecnatcudnocsnarTdrawroFg Sf V SD I> )NO(D RX xam)NO(SD I, D A51= 02- - S cimanyD egrahCetaGlatoTQ g V SD I,V03= D A03= V SG V01= -3 8- CnegrahCecruoS-etaGQ sg -9 .8- egrahCniarD-etaGQ dg -3 .42- emiTyaleDnO-nruTt )no(d V DD R,V03= L 51= Ω ID V,A2= NEG V01= RG 5.2= Ω -2 .812 2 sn emiTesiRnO-nruTt r -6 .510 2 emiTyaleDffO-nruTt )ffo(d -5 .070 9 emiTllaFffO-nruTt f -8 .318 1 ecnaticapaCtupnIC ssi V SD V,V52= SG V0= HM0.1=f Z -0 513- FpecnaticapaCtuptuOC sso -0 03- refsnarTesreveR ecnaticapaC C ssr -0 42- edoiDniarD-ecruoS tnerruCdrawroFedoiD.xaM Is - -- 5 7A egatloVdrawroFedoiDV DS IS V,A03= SG V0= -5 8.05 .1V

PAGE . 3STAD-JUN.11.2007 PJP75N75 Fig. 1-TYPICAL FORWARD CHARACTERISTICFIG.1- Output Characteristic Typical Characteristics Curves (T =25 C,unless otherwise noted)A O FIG.2- Transfer Characteristic FIG.3- On Resistance vs Drain Current FIG.6 - CapacitanceFIG.5- On Resistance vs Junction Temperature 100 012345 V DS - Drain-to-Source Voltage (V) ID - Drain-to-Source Current (A) 3.0V 3.5V 4.0V 4.5V 5.0V 6.5 7.5 8.5 9.5 0 20 40 60 80 100 ID - D rain Current (A) 6.0V10V V =10VGS R - On-Resistance (m ) DS(ON) /c87 FIG.4- On Resistance vs Gate to Source Voltage 2468 1 0 VGS - Gate-to-Source Voltage (V) ID =30A T =125 CJ O T =25 CJ O R - On-Resistance (m ) DS(ON) /c87 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) RDS(ON) - On-Resistance (Normalized) V =10V I =30A GS D 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Ciss Coss Crss V =0V f=1MHz GS V =10VDSV =10VDSV =10VDS 100 1.5 2 2.5 3 3.5 4 4.5 V GS - Gate-to-Source Voltage (V) ID - Drain Source Current (A) VDS =10V TJ =2 5oC T 125 CJ= O T =-55 CJ O

PAGE . 4STAD-JUN.11.2007 PJP75N75 Fig.11 - Maximum Drain Current vs Junction Temperature Fig.8 - Threshold Voltage vs Junction Temperature Fig.7 - Gate Charge Fig.9 - Breakdown Voltage vs Junction Temperature Fig.10 - Source-Drain Diode Forward Voltage 0 1 02 03 04 05 06 07 08 09 0 Q g - Gate Charge (nC) VGS - Gate-to-Source Voltage (V) V =30V I =30A DS D 0.1 100 VSD - Source-to-Drain Voltage (V) IS - Source Current (A) T =125 CJ O T =25 CJ O T =-55 CJ O V =0VGS 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) V th - G-S Threshold Voltage (NORMALIZED) I =250uAD 0.9 0.95 1.05 1.1 1.15 1.2 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) BV DSS Breakdown Voltage (NORMALIZED) I =250uAD 100 25 50 75 100 125 150 T J - Junction Temperature ( oC) ID - Drain Current (A) Limited by Package Fig.12 - Safe Operation Area 0.1 100 1000 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) ID -D r a i nC u r r e n t( A ) 10ms 100us 1msDC Rds(on) Limited LEGAL STATEMENT Copyright PanJit International, Inc 2007 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others.