P6SMB_15 TSC | Alldatasheet

Document overview

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Technical content

  • Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Typical IR less than 1μA above 10V - Halogen-free according to IEC 61249-2-21 definition Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test SYMBOL UNIT P PK Watts PD Watts TJ °C TSTG °C Devices for Bipolar Applications 1. For Bidirectional Use C or CA Suffix for Types P6SMB6.8 - Types P6SMB220A 2. Electrical Characteristics Apply in Both Directions PART NO. Note 1: "xxxx" defines voltage from 6.8V (P6SMB6.8) to 220V (P6SMB220A) PART NO. Document Number: DS_D1409032 Version: L15 AEC-Q101 qualified Green compoundP6SMB20AHR5G P6SMB20A H R5 G SMB 3,000 / 13" Plastic reel EXAMPLE PREFERRED PART NO. PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX

DESCRIPTION

(Note 1) H G SMB 850 / 7" Plastic reel R4 SMB 3,000 / 13" Paper reel

ORDERING INFORMATION

PART NO. SUFFIX PACKING CODE PACKING CODE SUFFIX PACKAGE PACKING °C/W10 Note 2: VF=3.5V on P6SMB6.8 - P6SMB91 Devices and VF=5.0V on P6SMB100 - P6SMB220 Device. DO-214AA (SMB) Steady state power dissipation 3 Volts Operating junction temperature range - 55 to +150 Case: DO-214AA (SMB) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 100 Storage temperature range - 55 to +150 Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25°C Per Fig. 2 Maximum instantaneous forward voltage at 50 A for Unidirectional only (Note 2) VF 3.5 / 5.0 Polarity: Indicated by cathode band Weight: 0.09 g (approximately) Typical thermal resistance RθJC RθJA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER VALUE Peak power dissipation at TA=25°C, Tp=1ms (Note 1) 600 A P6SMB SERIES Taiwan Semiconductor 600W, 6.8V - 220V Surface Mount Transient Voltage Suppressor

FEATURES

  • Fast response time: Typically less than 1.0ps from 0 volt to BV min Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC MECHANICAL DATA

Document Number: DS_D1409032 Version: L15 P6SMB SERIES Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) 100 125 0 25 50 75 100 125 150 175 200 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) TA, AMBIENT TEMPERATURE (°C) FIG.2 PULSE DERATING CURVE 100 1 10 100 IFSM, PEAK FORWARD SURGE CURRENT (A) NUMBER OF CYCLES AT 60 Hz FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY 8.3ms Single Half Sine Wave 100 120 140 00 . 511 . 522 . 533 . 54 PEAK PULSE CURRENT (%) t, TIME ms FIG. 3 CLAMPING POWER PULSE WAVEFORM td Peak Value IPPM tr=10μs Half Value-IPPM/2 10/1000μs, WAVEFORM as DEFINED by R.E.A. PULSE WIDTH(td) is DEFINED as the POINT WHERE the PEAK CURRENT DECAYS to 50% OF I PPM 100 1000 10000 1 10 100 CJ, JUNCTION CAPACITANCE (pF) A V(BR), BREAKDOWN VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE f=1.0MHz Vsig=50mVp-p VR=0 MEASURED at STAND-OFF VOLTAGE,Vwm 0.1 100 0.1 1 10 100 1000 10000 PPPM, PEAK PULSE POWER, KW tp, PULSE WIDTH, (μs) FIG. 1 PEAK PULSE POWER RATING CURVE NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3

Test Stand-Off Maximum Maximum Maximum Maximum Current Voltage Reverse Leakage Peak Pulse Clamping Voltag e Temperature IT VWM @ VWM Current IPPM @ IPPM Coefficient Min Max (mA) (V) ID (μA) (A) (Note 2) Vc(V) of VBR(%/°C) Document Number: DS_D1409032 Version: L15 P6SMB SERIES Taiwan Semiconductor Device Device Marking Code Breakdown Voltage VBR (V) (Note 1)

Test Stand-Off Maximum Maximum Maximum Maximum Current Voltage Reverse Leakage Peak Pulse Clamping Voltag e Temperature IT VWM @ VWM Current IPPM @ IPPM Coefficient Min Max (mA) (V) ID (μA) (A) (Note 2) Vc(V) of VBR(%/°C) P6SMB100 MWJ 90 110 1.0 81.0 1 4.3 144 0.106 P6SMB100A MXJ 95 105 1.0 85.5 1 4.5 137 0.106 P6SMB110 MYJ 99 121 1.0 89.2 1 3.9 158 0.107 P6SMB110A MZJ 105 116 1.0 94.0 1 4.1 152 0.107 P6SMB120 NDJ 108 132 1.0 97.2 1 3.6 173 0.107 P6SMB120A NEJ 114 126 1.0 102.0 1 3.8 165 0.107 P6SMB130 NFJ 117 143 1.0 105.0 1 3.3 187 0.107 P6SMB130A NGJ 124 137 1.0 111.0 1 3.5 179 0.107 P6SMB150 NHJ 135 165 1.0 121.0 1 2.9 215 0.108 P6SMB150A NKJ 143 158 1.0 128.0 1 3.0 207 0.108 P6SMB160 NLJ 144 176 1.0 130.0 1 2.7 230 0.108 P6SMB160A NMJ 152 168 1.0 136.0 1 2.8 219 0.108 P6SMB170 NNJ 153 187 1.0 138.0 1 2.5 244 0.108 P6SMB170A NPJ 162 179 1.0 145.0 1 2.6 234 0.108 P6SMB180 NQJ 162 198 1.0 146.0 1 2.4 258 0.108 P6SMB180A NRJ 171 189 1.0 154.0 1 2.5 246 0.108 P6SMB200 NSJ 180 220 1.0 162.0 1 2.1 287 0.108 P6SMB200A NTJ 190 210 1.0 171.0 1 2.2 274 0.108 P6SMB220 NUJ 198 242 1.0 175.0 1 1.8 342 0.108 P6SMB220A NVJ 209 231 1.0 185.0 1 1.9 328 0.108 Notes: 1. V BR measure after IT applied for 300μs, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure. 3 and derate per Figure. 2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. For bidirectional use C or CA suffix for types P6SMB6.8 - P6SMB220A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. Document Number: DS_D1409032 Version: L15 Device Device Marking Code Breakdown Voltage VBR (V) (Note 1) P6SMB SERIES Taiwan Semiconductor

A 1.95 2.10 0.077 0.083 B 4.25 4.75 0.167 0.187 C 3.48 3.73 0.137 0.147 D 1.99 2.61 0.078 0.103 E 0.90 1.41 0.035 0.056 F 5.10 5.30 0.201 0.209 G 0.10 0.20 0.004 0.008 H 0.15 0.31 0.006 0.012 P/N = Device Marking Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1409032 Version: L15 MARKING DIAGRAM D 1.8 0.071 E 6.8 0.268 B 2.5 0.098 C 4.3 0.169 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 P6SMB SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) DO-214AA (SMB)

assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1409032 Version: L15 P6SMB SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,