P6SMB_V02 VISHAY | Alldatasheet
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www.vishay.com Vishay General Semiconductor Revision: 23-Dec-14 1 Document Number: 88370 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Surface Mount TRANSZORB® Transient Voltage Suppressors DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. P6SMB10CA). Electrical characteristics apply in both directions.
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated chip junction
- Available in uni-directional and bi-directional
- 600 W peak pulse power capability with a 10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %
- Excellent clamping capability
- Very fast response time
- Low incremental surge resistance
- Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
- AEC-Q101 qualified
- Material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. MECHANICAL DATA Case: DO-214AA (SMB J-Bend) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 cla ss 2 whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional ty pes the band denotes cathode end, no marking on bi-directional types Notes (1) Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2. (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal PRIMARY CHARACTERISTICS VWM 5.8 V to 459 V VBR (uni-directional) 6.8 V to 540 V VBR (bi-directional) 6.8 V to 220 V PPPM 600 W PD 5.0 W IFSM (uni-directional only) 100 A TJ max. 150 °C Polarity Uni-directional, bi-directional Package DO-214AA (SMB J-Bend) DO-214AA (SMB J-Bend) MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1) P PPM 600 W Peak pulse current with a 10/1000 μs waveform (1) I PPM See next table A Power dissipation on infinite heatsink at TA = 50 °C P D 5.0 W Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 100 A Operating junction and storage temperature range T J, TSTG -65 to +150 °C
www.vishay.com Vishay General Semiconductor Revision: 23-Dec-14 2 Document Number: 88370 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: tp 50 ms (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) For bi-directional types with VWM of 10 V and less, the ID limit is doubled (4) All terms and symbols are consistent with ANSI/IEEE CA62.35 (5) VF = 3.5 V at IF = 50 A (uni-directional only) ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PART NUMBER DEVICE MARKING CODE BREAKDOWN VOLTAGE VBR AT IT (1) (V) TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) MAXIMUM REVERSE LEAKAGE AT VWM ID (3) (μA) MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/°C)UNI BI MIN. MAX. P6SMB120A 120A 120C 114 126 1.0 102 1.0 3.6 165 0.107 P6SMB130A 130A 130C 124 137 1.0 111 1.0 3.4 179 0.107 P6SMB150A 150A 150C 143 158 1.0 128 1.0 2.9 207 0.108 P6SMB160A 160A 160C 152 168 1.0 136 1.0 2.7 219 0.108 P6SMB170A 170A 170C 162 179 1.0 145 1.0 2.6 234 0.108 P6SMB180A 180A 180C 171 189 1.0 154 1.0 2.4 246 0.108 P6SMB200A 200A 200C 190 210 1.0 171 1.0 2.2 274 0.108 P6SMB220A 220A 220C 209 231 1.0 185 1.0 1.8 328 0.108 P6SMB250A 250A - 237 263 1.0 214 1.0 1.74 344 0.110 P6SMB300A 300A - 285 315 1.0 256 1.0 1.45 414 0.110 P6SMB350A 350A - 333 368 1.0 300 1.0 1.24 482 0.110 P6SMB400A 400A - 380 420 1.0 342 1.0 1.10 548 0.110 P6SMB440A 440A - 418 462 1.0 376 1.0 1.00 602 0.110 P6SMB480A 480A - 456 504 1.0 408 1.0 0.91 658 0.110 P6SMB510A 510A - 485 535 1.0 434 1.0 0.86 698 0.110 P6SMB540A 540A - 513 567 1.0 459 1.0 0.81 740 0.110
www.vishay.com Vishay General Semiconductor Revision: 23-Dec-14 3 Document Number: 88370 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note (1) Mounted on minimum recommended pad layout Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Typical thermal resistance, junction to ambient air (1) RJA 100 °C/ W Typical thermal resistance, junction to lead R JL 20 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) VOLTAGE RANGE (V) PACKAGE CODE BASE QUANTITY DELIVERY MODE UNI - BI - P6SMB6.8A-E3/52 0.096 6.8 to 540 6.8 to 220 5 2 750 7" diameter plastic tape and reel P6SMB6.8A-E3/5B 0.096 6.8 to 540 6.8 to 220 5 B 3200 13" diameter plastic tape and reel P6SMB6.8AHE3/52 (1) 0.096 6.8 to 220 6.8 to 220 52 750 7" diameter plastic tape and reel P6SMB6.8AHE3/5B (1) 0.096 6.8 to 220 6.8 to 220 5B 3200 13" diameter plastic tape and reel P6SMB250AHE3_A/H (1) 0.096 250 to 540 - H 750 7" diameter plastic tape and reel P6SMB250AHE3_A/I (1) 0.096 250 to 540 - I 3200 13" diamet er plastic tape and reel Copper Pad Areas 0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms 100 0.1 P PPM - Peak P ulse Po wer (kW) td - Pulse Width (s) 0 25 50 75 100 100 125 150 175 200 TJ - Initial Temperature (°C) Peak P ulse Po wer (P PP ) or C urrent (I PP Derating in Percentage, %
www.vishay.com Vishay General Semiconductor Revision: 23-Dec-14 4 Document Number: 88370 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Fig. 3 - Pulse Waveform Fig. 4 - Typical Junction Capacitance Fig. 5 - Typical Transient Thermal Impedance Fig. 6 - Maximum Non-Repetitive Peak Forward Surge Current PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 100 150 td 0 1.0 2.0 3.0 4.0 IPPM - Peak P ulse C urrent, % I RSM t - Time (ms) tr = 10 µs Peak Value IPPM Half Value - IPPM IPP 10/1000 µs Waveform as defined by R.E.A. TJ = 25 °C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of I PPM 100 1000 101 100 200 Uni-Directional Bi-Directional 6000 TJ = 25 °C f = 1.0 MHz V sig = 50 mVp-p Measured at Zero Bias VR, Measured at Stand-Off Voltage VWM C J - J unction Capacitance (pF) VWM - Reverse Stand-Off Voltage (V) 0.1 1.0 100 0.001 0.01 0.1 1 10 100 1000 tp - Pulse Duration (s) Transient Thermal Impedance (°C/W) 200 100 1 10010 8.3 ms Single Half Sine-Wave Uni-Directional Only Number of Cycles at 60 Hz Peak For ward S urge C urrent (A) 0.180 (4.57) 0.006 (0.152) 0.008 (0.203) Max.0.220 (5.59) 0.205 (5.21) 0.060 (1.52) 0.030 (0.76) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.096 (2.44) 0.084 (2.13) Cathode Band DO-214AA (SMB J-Bend) Mounting Pad Layout 0.085 (2.159) MAX. 0.220 REF. 0.086 (2.18) MIN. 0.060 (1.52) MIN.
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