P6KE-G COMCHIP | Alldatasheet

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Technical content

Features

-Plastic package has underwriters laboratory flammability classification 94V-0 -600W, surge capability at 1mS. -Excellent clamping capability. -Low Zener impedance. -Fast response time: typically less than 1.0pS from 0 volt to BV min. -Typical IR less than 1μA above 10V. Mechanical Data -Case: Molded plastic DO-15 -Terminals: Axial leads solderable per MIL-STD- 202, Method 208 -Polarity: Color band denotes positive end (cathode) -Weight: 0.4 gram (0.014oz.) Dimensions in inches and (millimeter) DO-15 Peak forward surge current, 8.3mS single half sine-wave superimposed on rated load (JEDEC method) (Note 3) Operating junction and storage temperature range PPK 5.0 600 -55 to +175 W W A O C O Steady state power dissipation at TL=75 C Lead length 0.375" (9.5mm) (Note 2) NTOES: O (1) Non-repetitive current pulse, per fig.3 and derated above TA=25 C per fig. 2.2 2 (2) Mounted on copper land area of 1.57in (40mm ). (3) 8.3mS single half-sine wave, duty cycle=4 pulses per minute maximum. (4) For bidirectional use C suffix for 10% tolerance, CA suffix for 5% tolerance. PD IFSM TJ, TSTG 1.0(25.4) MIN. 0.300(7.6) 0.230(5.8) 0.140(3.6) 0.104(2.6) 0.034(0.9) 0.028(0.7) 1.0(25.4) MIN.

RATING AND CHARACTERISTIC (P6KE-G Series) 600W Transient Voltage Suppressor600W Transient Voltage Suppressor Page 2QW-BTV06 REV:A SMD Diodes Specialist MIN. MAX. Maximum Clamping Voltage VRWM (V) Maximum Temperature Coefficient of VRR (%C) BBR (V) @IT(mA) Breakdown Voltage Working Peak Reverse Voltage VRWM(V) Maximum Reverse Leakage at VRWM IR(μA) Maximum Reverse Current IRSM (A) Part No.

600W Transient Voltage Suppressor600W Transient Voltage Suppressor Page 3QW-BTV06 REV:A SMD Diodes Specialist RATING AND CHARACTERISTIC (P6KE-G Series) NOTES: 1. VBR measured after IT applied for 300μS, IT=square wave pulse or equivalent. 2. Surge current wave form per fig.3 and derated per fig.2. 3. VF=3.5V at IF=50A (P6KE6.8-G thru P6KE91A-G VF=5.0V at IF=50A (p6KE100-G thru P6KE400A-G on ½ square or equivalent sine wave. PW=8.3mS, duty cycle=4 pulses per minute max.. 4. For bipolar types having VRWM of 10 Volts and under, the IR limit is doubled. M IN . M A X . M a xim u m C la m p in g V o lta g e V R W M (V ) M a xim u m T e m p e ra tu re C o e ffic ie n t o f V R R (% C ) B B R (V ) @ IT (m A ) B re a k d o w n V o lta g e W o rk in g P e a k R e ve rs e V o lta g e V R W M (V ) M a xim u m R e ve rs e L e a k a g e a t V R W M IR (μ A ) M a xim u m R e ve rs e C u rre n t IR S M (A ) P a rt N o .

RATING AND CHARACTERISTIC CURVES (P6KE-G Series) 600W Transient Voltage Suppressor600W Transient Voltage Suppressor Page 4QW-BTV06 REV:A SMD Diodes Specialist Fig.2 Pulse Derating Curve Peak Pulse Power (PPP) or Current(IPP) Derating in Percentge (%) O TA, Ambient Temperature ( C) Fig.1 Peak Pulse Power Rating Curve 0.1 PPPM,Peak Pulse Power (kW) td, Pulse Width (sec) 0.1μS 1.0μS 10μS 100μS 1.0mS 10mS 1.0 100 100 50 100 200 Fig.3 Pulse Wave Form IPPK, Peak Pulse Current (%) t, Time (mS) 0 1 2 3 4 100 150 Fig.4 Typical Junction Capacitance Unidirectional CJ, Junction Capacitance (pF) VBR, Breakdown Voltage (V) 1 10 200 100 1000 6000 Fig.5 Steady State Power Derating Curve PM(AV), Steady State Power Dissipation (W) O TL, Lead Temperature ( C) 0 50 75 150 200 5.00 1.25 Non-repetitive pulse waveform shown in fig.3 O TA=25 C 150 tr=10μS Peak value, IPPM Half value, IPP/2 10/1000μS waveform as deined by R.E.A Pulse width (td) is defined as the point where the peak current decays to 50% of IPP td 100 Measured at zero bias Measured at stand off voltage, VWM TJ=25OC f=1MHz Vsig=50mVPP 25 100 125 175 2.50 3.75 Fig.6 Maximum Non-repetitive Forward Surge Current Unidirectional IFSM, Peak Forward Surge Current (A) Number of Cycles at 60Hz 8.3mS single half sine-wave (JEDEC method) 10 100 100 200 60Hz Resistive or inductive load 1.6" 1.6" 0.040" (40" 40" 1mm) Copper heat sinks L=0.375"(9.5mm) Lead lengths

RATING AND CHARACTERISTIC CURVES (P6KE-G Series) 600W Transient Voltage Suppressor600W Transient Voltage Suppressor Page 5QW-BTV06 REV:A SMD Diodes Specialist Fig.7 Typical Reverse Leakage Characteristics 0.001 IO, Instantaneous Reverse Leakage Current (μA) VR, Breakdown Voltage (V) 0 100 200 300 400 500 0.01 0.1 O TA=25 C Measured at devices stand-off Voltage, VWM 100 1000