P6FMBJ RECTRON | Alldatasheet
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Technical content
- Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum. NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 o C per Fig.2. RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION
FEATURES
- Plastic package has underwriters laboratory * Glass passivated chip construction * 600 watt surage capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. TVS P6FMBJ SERIES DO-214AA 600 WATT PEAK POWER 1.0 WATT STEADY STATE GPP TRANSIENT VOLTAGE SUPPRESSOR Dimensions in inches and (millimeters) MAXIMUM RA TINGS (At TA = 25 o C unless otherwise noted) DEVICES FOR BIPOLAR APPLICATIONS For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400 Electrical characteristics apply in both direction 1998-8 Ratings at 25 o C ambient temperature unless otherwise specified. RATINGS Steady State Power Dissipation at TL = 75 o C ( Note 2 ) Peak Pulse Durrent with a 10/1000uS waveform ( Note 1, Fig.3 ) Maximum Instantaneous Forward Voltage at 50A for SYMBOL IFSM V F TJ, TSTG Volts -55 to + 150 0 C UNITS unidirectional only ( Note 3,4 ) Amps Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1) Minimum 600 100 SEE NOTE 4 VALUE Operating and Storage Temperature Range P PPM Watts IPPM AmpsSEE TABLE 1 Peak Forward Surge Current, 8.3mS single half sine wave super- imposed on rated load (Jedec Method)(Note 3,2) unidirectional only P M (AV ) 5.0 Amps