P600A YEASHIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

HIGH CURRE NT PLASTIC SILICON RECTIFIERS VOLTAGE- 50 to 1000 Volts CURRENT - 6.0 Amperes FE ATURES

  • Plastic package has Underwriters Laboratories
  • Flammability Classi fication 94V-O utilizing
  • Flame Retardant Epoxy Molding Compound.
  • High current capability .
  • Exceeds env ironmental standards of MIL-S-19 500/2 28
  • Low leakage .
  • High temperature soldering : 260 O C / 10 seconds at terminals
  • Pb free product at available:99% Sn above meet RoHS environment substance directive request MECHAN ICAL DATA
  • Case: Molded plasti c, P600
  • Terminals: Axial leads, solderable to MIL-STD-202,Method 208
  • Polari ty: Color Band denotes cathode
  • Mounting Position: Any MAXIMUM RATINGS AND ELECTRIC AL CHA RACTERISTICS Ratings at 25°C ambienttempe rature unless otherwise specified. Resistive or inductive load, 60 H z. P600A P600B P600D P600G P600J P600K P600M UNIT Maximum Recurrent Peak Reverse Voltage 50 100 200 400 600 800 1000 V Maximum RMS Voltage 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage 50 100 200 400 600 800 1000 V Maximum Average Forward Rectified Current at TA=55°C 6.0 A Maximum Overload Surge Current at 1cyc le (Note 1) 400 A Maximum Forward Voltage at 6.0A DC 1.00 V Maximum DC Reverse Current at Rated DC Blocki ng Voltage T A=25°C Maximum DC Reverse Current at Rated DC Blocking Voltage T A=100°C 10.0 1.0 mA Typical Junction capaci tance (Note 2) 150 PF Typical Junction Resistance(Note 3 ) RθJL 20.0 4.0 Operating and Storage Temperature Range -55 to +150 NOTES: 1.Peak forward surge current, per 8.3ms single half- sine-wave superimposed on rated load (JEDEC method) 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts. 1.0 x 1.0 ( 30 x 30mm ) copper pads. P-600 Unit:inch(mm) .052 (1.3) .048 (1.2) .36 (9.1) .34 (8.6) DIA. DIA. .36 (9.1) .34 (8.6) 1.0 (25.4) MIN. 1.0 (25.4) MIN. http://www.yeashin.com 1 REV.03 20150105 DATA SHEET P600A THRU P600M SEMICONDUCTOR µA SYMBOLS VRRM VRMS VDC I(AV) IFSM VF IR CJ TJ,TSTG RθJA

Fig. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS AMBIENT TEMPERATURE (T )- C A O Fig. 1 - FORWARD DERATING CURVE 8.0 6.0 4.0 2.0 0 25 50 75 100 125 150 175 200 1.0 0.1 0 .01 Fig. 5 - MAXIMUM OVERLOAD S URHE CURRENT Fig. 3 - TYPICAL T RANSIENT THERMAL IMPEDANCE 100 1.0 10 1.0 0.10.01 480 400 320 240 160 1 0 0 10 1 T =60 C A o PERCENT OF RATED PEAK REVERSE VOLTAGE INSTANTANEOUS FORWARD VOLTAGE,VOLTS NO. OF CYCLES AT 60Hz k p A , T N E R R U C E G R U S D R A W R O F S E R E P M A W / C , E C N A D E P M I L A M R E H T T N E I S N A R T O , T N E R R U C D R A W R O F S U O E N A T N A T S N I S E R E P M A A u , T N E R R U C E S R E V E R S U O E N A T N A T S N I P M A - ) o I ( T N E R R U C D W F E G A R E V A 1.0 0.10 20 40 60 80 100 120 140 Fig. 2 TYPICAL REVERSE CHARACTERISTICS 100 25 C o 100 100 0.1 t,PULSE DURATION, sec. http://www.yeashin.com 2 REV.03 20150105 M 0 0 6 P ~ A 0 0 6 P RATING AND CHARACTERISTIC CURVES