P5504

P5504 UMW | Alldatasheet

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Technical content

FEATURES

• Package with low thermal resistance Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PRODUCT SUMMARY S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a ID -50 A TC = 125 °C -39 Continuous Source Current (Diode Conduction) a IS -50 Pulsed Drain Current b IDM -200 Single Pulse Avalanche Current L = 0.1 mH IAS -40 Single Pulse Avalanche Energy EAS 80 mJ Maximum Power Dissipation b TA = 25 °C PD W TC = 25 °C 136 TC = 125 °C 45 Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c RthJA 50 °C/WJunction-to-Case (Drain) RthJC 1.1 UMW R P5504 /G108VDS (V) = -40V /G108RDS(ON) 17 m (VGS = -10V) /G108RDS(ON) 28m (VGS = -4.5V) www.umw-ic.com 1 UTD Semiconductor Co.,Limited P-Channel MOSFET

a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. PECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS VGS = 0 V, ID = -250 μA -40 V Gate-Source Threshold Voltage V GS(th) VDS = VGS, ID = -250 μA -1.5 -2.5 Gate-Source Leakage I GSS V DS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS V GS = 0 V V DS = -40 V -1 VGS = 0 V V DS = -40 V, TJ = 125 °C -50 μA VGS = 0 V V DS = -40 V, TJ = 175 °C -150 On-State Drain Currenta I D(on) V GS = -10 V V DS  -5 V -50 AV GS = -10 V I D = -17 A 17 Drain-Source On-State Resistancea R DS(on)  VGS = -4.5 V I D = -14 A 29 Forward Transconductancea gfs VDS = -15 V, ID = -17 A 61 - S Dynamic b Input Capacitance C iss VGS = 0 V V DS = -25 V, f = 1 MHz 2872 3950 Output Capacitance C oss 508 635 pF Reverse Transfer Capacitance C rss 352 440 Total Gate Charge c Qg VGS = -10 V V DS = -30 V, ID = -50 A 60 80 Gate-Source Charge c Qgs 5.7 8.6 nC Gate-Drain Charge c Qgd 14.7 22 Gate Resistance R g f = 1 MHz 1.5 3 4.5  Turn-On Delay Time c td(on) VDD = -20 V, RL = 0.4  ID  -50 A, VGEN = -10 V, Rg = 1  10 15 nsR ise Time c tr 12 18 Turn-Off Delay Time c td(off) 40 60 Fall Time c tf 16 24 Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM -200 A Forward Voltage V SD IF = -50 A, VGS = 0 V -1 -1.5 V m www.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R P5504 P-Channel MOSFET

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Output Characteristics On-Resistance vs. Drain Current Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 100 VGS = 10 V thru 5 V 3 V VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 129631 5 4 V 0.00 0.01 0.02 0.03 0.05 0 2 04 06 08 0 1 0 0 ID - Drain Current (A) VGS = 4.5 V RDS(on) - On-Resistance () 0.04 VGS = 10 V VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) ID = 50 A VDS = 20 V 50403020 0601 100 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 86421 0 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 1000 2000 3000 4000 5000 Ciss Coss Crss 35 30 25 20 15 1054 0 0.5 0.8 1.1 1.4 1.7 2.0 175 VGS = 10 V ID = 30 A TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) - 50 150 125 100 75 50 25 0 - 25 www.umw-ic.com 3 UTD Semiconductor Co.,Limited UMW R P5504 P-Channel MOSFET

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Source Drain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to Source Voltage Transconductance Drain Source Breakdown vs. Junction Temperature VSD -- Source-to-Drain Voltage (V) IS - Source Current (A) 0.01 0.001 0.1 100 TJ = 25 °C TJ = 150 °C ID = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) - 0.4 0.5 0.8 1.1 ID = 5 mA - 50 - 25 150 125 100 75 50 25175 - 0.1 0.2 0.00 0.02 0.04 0.08 0.10 0 2468 1 0 TJ = 25 °C RDS(on) - On-Resistance () VGS - Gate-to-Source Voltage (V) TJ = 150 °C 0.06 100 120 0 2 04 06 08 0 1 0 0 ID - Drain Current (A) - Transconductance (S)gfs TC = - 55 °C 25 °C 125 °C - 50 - 48 - 46 - 44 - 42 - 40 - 50 - 25 0 25 50 75 100 125 150 175 ID = 10 mA TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) www.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R P5504 P-Channel MOSFET

TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Safe Operating Area Normalized Thermal Transient Impedance, Junction-to-Case 0.01 0.1 100 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is s ID - Drain Current (A) TC = 25 °C Single Pulse 100 µs BVDSS Limited 1 ms 10 ms 100 ms 1 s, 10 s, DC Limited by R *DS(on) ID Limited IDM Limited Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 Duty Cycle = 0.5 Single Pulse 0.02 www.umw-ic.com 5 UTD Semiconductor Co.,Limited UMW R P5504 P-Channel MOSFET

Normalized Thermal Transient Impedance, Junction-to-Ambient Note

• The characteristics shown in the two graphs  - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062" , double sided with 2 oz. copper, 100 % on both sides. The part ca pabilities can widely vary depending on actual application parameters and operating conditions. Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 10-1 10 Normalized Effective Transient Thermal Impedance 1000 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1001 www.umw-ic.com 6 UTD Semiconductor Co.,Limited UMW R P5504 P-Channel MOSFET

Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D Package Mechanical Data TO-252 MarkingOrdering information Order code Package Baseqty Deliverymode UMW P5504EDG TO-252 2500 Tape and reel www.umw-ic.com 7 UTD Semiconductor Co.,Limited UMW R P5504 P-Channel MOSFET