P4SMA6.8A SSC | Alldatasheet

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08/23/2007 Rev.1.00 www.SiliconStandard.com 1 P4SMA6.8A thru P4SMA550CA PRODUCT SUMMARY Peak Pulse Power 400W Breakdown voltage 6.8 to 550V

FEATURES

Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) Ideal for EFT protection of data lines in accordance with IEC1000-4-4 (IEC801-4) Low profile package with built-in strain relief for surface mounted applications Glass passivated junction Low incremental surge resistance, excellent clamping capability 400W peak pulse power capability with a 10/1000us wave- form, repetition rate (duty cycle): 0.01% (300W above 91V) Very Fast response time High temperature soldering guaranteed: 250 oC/10 seconds at terminals MECHANICAL DATA Case: JEDEC DO-214AC molded plastic over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.002oz., 0.064g Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions. Pb-free; RoHS-compliant

08/23/2007 Rev.1.00 www.SiliconStandard.com 2 P4SMA6.8A thru P4SMA550CA MAXIMUM RATINGS AND CHARACTERISTICS (TA=25 oC unless otherwise noted) retemaraPl obmySe ulaVt inU 0001/01ahtiwnoitapissidrewopeslupkaeP u mrofevaws )2()1( )1.giF( P MPP 004W 0001/01ahtiwtnerruceslupkaeP u mrofevaws )1( )3.giF(I MPP elbaTtxeNeeSA T,knistaehetinifninonoitapissidrewoP A 05= oCP )VA(M 0.1W evaw-enisflahelgnissm3.8,tnerrucegrusdrawrofkaeP ylnolanoitcerid-inu )2( I MSF 04A riatneibmaotnoitcnujecnatsiserlamrehT )3( Rθ AJ 021 o W/C sdaelotnoitcnujecnatsiserlamrehTR θ LJ 03 o W/C egnarerutarepmetegarotsdnanoitcnujgnitarepOT J T, GTS 051+ot55- oC 3. Mounted on minimum recommended pad layout

08/23/2007 Rev.1.00 www.SiliconStandard.com 3 P4SMA6.8A thru P4SMA550CA

ELECTRICAL CHARACTERISTICS

Ratings at 25 oC ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) epyteciveD gnikrameciveD edoc egatlovnwodkaerB V )RB( )stloV( )1( tseT tnerruc Ita T )Am( ffo-dnatS egatlov V MW )stloV( mumixaM esrever egakael Vta MW ID )3( (u )A mumixaM eslupkaep tnerruc I MPP )2( )A( mumixaM gnipmalc taegatlov I MPP VC )stloV( mumixaM erutarepmet tneiciffeoc Vfo )RB( /%( o )CINUI B. niM. xaM A021AMS4PA 021C 0214 116 210 .12 010 .18 .15 617 01.0 A031AMS4PA 031C 0314 217 310 .11 110 .17 .19 717 01.0 A051AMS4PA 051C 0513 418 510 .18 210 .14 .17 026 01.0 A061AMS4PA 061C 0612 518 610 .16 310 .14 .19 128 01.0 A071AMS4PA 071C 0712 619 710 .15 410 .13 .14 328 01.0 A081AMS4PA 081C 0811 719 810 .14 510 .12 .16 428 01.0 A002AMS4PA 002C 0020 910 120 .11 710 .11 .14 728 01.0 A022AMS4PA 022C 0229 021 320 .15 810 .19 .08 238 01.0 A052AMS4PA 052C 0527 323 620 .14 120 .12 .14 438 01.0 A003AMS4PA 003C 0035 825 130 .16 520 .10 .14 148 01.0 A053AMS4PA 053C 0532 338 630 .10 030 .19 .02 848 01.0 A004AMS4PA 004C 0040 830 240 .12 430 .18 .08 458 01.0 A044AMS4PA 044C 0448 142 640 .16 730 .17 .02 068 01.0 A084AMS4PA 084C 0846 544 050 .18 040 .16 .08 568 01.0 A015AMS4PA 015C 0155 845 350 .14 340 .16 .08 968 01.0 A045AMS4PA 045C 0453 157 650 .19 540 .15 .00 478 01.0 Notes: 1. V(BR) measured after IT applied for 300us, IT=square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. All terms and symbols are consistent with ANSI/IEEE CA62.35 4. For bidirectional types with VR 10 Volts and less, the ID limit is doubled

P4SMA6.8A thru P4SMA550CA 08/23/2007 Rev.1.00 www.SiliconStandard.com 4 Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties. RATINGS AND CHARACTERISTIC CURVES (TA=25oC unless otherwise noted)