P4SMA220CA GOOD-ARK | Alldatasheet
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scitsiretcarahCdnasgnitaRmumixaM (TA=25oC unless otherwise noted) Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 1000-4-2 (IEC801-2) Ideal for EFT protection of data lines in accordance with IEC1000-4-4 (IEC801-4) Low profile package with built-in strain relief for surface mounted applications Glass passivated junction Low incremental surge resistance, excellent clamping capability 400W peak pulse power capability with a 10/1000us wave- form, repetition rate (duty cycle): 0.01% (300W above 91V) Very Fast response time High temperature soldering guaranteed: 250 oC/10 seconds at terminals Case: JEDEC DO-214AC molded plastic over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: For uni-directional types the band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: 0.002oz., 0.064g AC022AMS4PurhtA8.6AMS4P srosserppuSegatloVtneisnarTtnuoMecafruS V022ot8.6egatloVnwodkaerBW004rewoPesluPkaeP retemaraPl obmySe ulaVt inU 0001/01ahtiwnoitapissidrewopeslupkaeP u mrofevaws )2()1( )1.giF( P MPP 004W 0001/01ahtiwtnerruceslupkaeP u mrofevaws )1( )3.giF(I MPP elbaTtxeNeeSA T,knistaehetinifninonoitapissidrewoP A 05= oCP )VA(M 0.1W evaw-enisflahelgnissm3.8,tnerrucegrusdrawrofkaeP ylnolanoitcerid-inu )2( I MSF 04A riatneibmaotnoitcnujecnatsiserlamrehT )3( Rθ AJ 021 o W/C sdaelotnoitcnujecnatsiserlamrehTR θ LJ 03 o W/C egnarerutarepmetegarotsdnanoitcnujgnitarepOT J T, GTS 051+ot56- oC 3. Mounted on minimum recommended pad layout Devices for Bidirectional Applications For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions.
Ratings at 25oC ambient temperature unless otherwise specified. VF=3.5V at IF=25A (uni-directional only) epyteciveD gnikrameciveD edoc egatlovnwodkaerB V )RB( )stloV( )1( tseT tnerruc Ita T )Am( ffo-dnatS egatlov V MW )stloV( mumixaM esrever egakael Vta MW ID )3( (u )A mumixaM eslupkaep tnerruc I MPP )2( )A( mumixaM gnipmalc taegatlov I MPP VC )stloV( mumixaM erutarepmet tneiciffeoc Vfo )RB( /%( o )CINUI B. niM. xaM A021AMS4PA 021C 0214 116 210 .12 010 .18 .15 617 01.0 A031AMS4PA 031C 0314 217 310 .11 110 .17 .19 717 01.0 A051AMS4PA 051C 0513 418 510 .18 210 .14 .17 026 01.0 A061AMS4PA 061C 0612 518 610 .16 310 .14 .19 128 01.0 A071AMS4PA 071C 0712 619 710 .15 410 .13 .14 328 01.0 A081AMS4PA 081C 0811 719 810 .14 510 .12 .16 428 01.0 A002AMS4PA 002C 0020 910 120 .11 710 .11 .14 728 01.0 A022AMS4PA 022C 0229 021 320 .15 810 .19 .08 238 01.0 Notes: 1. V(BR) measured after IT applied for 300us, IT=square wave pulse or equivalent 2. Surge current waveform per Fig. 3 and derate per Fig. 2 3. All terms and symbols are consistent with ANSI/IEEE CA62.35 4. For bidirectional types with V R 10 Volts and less, the ID limit is doubled
SEVRUCCITSIRETCARAHCDNASGNITAR (TA = 25oC unless otherwise noted)