P4SMA100A

P4SMA BOURNS | Alldatasheet

Document overview

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Technical content

Features

n RoHS compliant* and halogen free** n Surface Mount SMA package n Breakdown Voltage: 6.8 to 550 volts n Peak Pulse Power: 400 watts n Typical temperature coefficient: ∆VBR = 0.1 % x VBR @ 25 °C x ∆T

Applications

n IEC 61000-4-2 ESD (Min. Level 4) n IEC 61000-4-4 EFT n IEC 61000-4-5 Surge Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) P4SMA Transient Voltage Suppressor Diode Series * RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. **Bourns considers a product to be “halogen free” if (a) the Bromine (Br) content is 900 ppm or less; (b) the Chlorine (Cl) content is 900 ppm or less; and (c) the total Bromine (Br) and Chlorine (Cl) content is 1500 ppm or less. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Parameter Symbol Value Unit Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2) PPK 400 Watts Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) (Note 3) IFSM 40 Amps Instantaneous Forward Voltage @ 25 A (For Unidirectional Units Only) P4SMA6.8A ~ P4SMA200A P4SMA220A ~ P4SMA550A VF 3.5

5.0 Volts

Operating Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +150 °C 1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve. 2. Mounted on 5.0 mm x 5.0 mm copper pad to each terminal. 3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only). General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AC (SMA) size format. The Transient Voltage Suppressor series offers a choice of Breakdown Voltages from 6.8 V up to 550 V. Typical fast response times are less than 1.0 picosecond for unidirectional devices and less than 5.0 picoseconds for bidirectional devices. Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the flat configuration minimizes roll away. How to Order P4SMA 6.8 CA - H Series P4SMA = SMA/DO-214AC Breakdown Voltage 6.8 to 550 = 6.8 to 550 VBD (Volts) Suffix A = 5 % Tolerance Unidirectional Device CA = 5 % Tolerance Bidirectional Device Reel (blank) = 13 inch reel -H = 7 inch reel *RoHS COMPLIANT LEAD FREE *RoHS COMPLIANTVERSIONS AVAILABLE LEAD FREE VERSIONS ARE RoHS COMPLIANT* Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus@bourns.com Europe: Tel: +36 88 520 390 Email: eurocus@bourns.com The Americas: Tel: +1-951 781-5500 Email: americus@bourns.com www.bourns.com

Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P4SMA Transient Voltage Suppressor Diode Series Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Unidirectional Device Bidirectional Device Breakdown Voltage VBR (Volts) Working Peak Reverse Voltage Maximum Reverse Leakage @ VRWM Maximum Reverse Voltage @ IRSM Maximum Reverse Surge Current Part No. Marking Part No. Marking Min. Max. @ IT (mA) VRWM (V) IR (μA) VRSM (V) IRSM (A) P4SMA20A 20A P4SMA20CA 20C 19 21 1 17.1 1 27.7 14.8 P4SMA33A 33A P4SMA33CA 33C 31.4 34.7 1 28.2 1 45.7 9 P4SMA39A 39A P4SMA39CA 39C 37.1 41 1 33.3 1 53.9 7.6 P4SMA56A 56A P4SMA56CA 56C 53.2 58.8 1 47.8 1 77 5.3 P4SMA62A 62A P4SMA62CA 62C 58.9 65.1 1 53 1 85 4.8 P4SMA68A 68A P4SMA68CA 68C 64.6 71.4 1 58.1 1 92 4.5 P4SMA75A 75A P4SMA75CA 75C 71.3 78.8 1 64.1 1 103 4 P4SMA82A 82A P4SMA82CA 82C 77.9 86.1 1 70.1 1 113 3.6 P4SMA91A 91A P4SMA91CA 91C 86.5 95.5 1 77.8 1 125 3.3 P4SMA100A 100A P4SMA100CA 100C 95 105 1 85.5 1 137 3 P4SMA110A 110A P4SMA110CA 110C 105 116 1 94 1 152 2.7 P4SMA120A 120A P4SMA120CA 120C 114 126 1 102 1 165 2.5 P4SMA130A 130A P4SMA130CA 130C 124 137 1 111 1 179 2.3 P4SMA150A 150A P4SMA150CA 150C 143 158 1 128 1 207 2 P4SMA160A 160A P4SMA160CA 160C 152 168 1 136 1 219 1.9 P4SMA170A 170A P4SMA170CA 170C 162 179 1 145 1 234 1.8 P4SMA180A 180A P4SMA180CA 180C 171 189 1 154 1 246 1.7 P4SMA200A 200A P4SMA200CA 200C 190 210 1 171 1 274 1.5 P4SMA220A 220A P4SMA220CA 220C 209 231 1 185 1 328 1.3 P4SMA250A 250A P4SMA250CA 250C 237 263 1 214 1 344 1.2 P4SMA300A 300A P4SMA300CA 300C 285 315 1 256 1 414 1 P4SMA350A 350A P4SMA350CA 350C 332 368 1 300 1 482 0.9 P4SMA400A 400A P4SMA400CA 400C 380 420 1 342 1 548 0.8 P4SMA440A 440A P4SMA440CA 440C 418 462 1 376 1 602 0.7 P4SMA480A 480A P4SMA480CA 480C 456 504 1 408 1 658 0.6 P4SMA510A 510A P4SMA510CA 510C 485 535 1 434 1 698 0.6 P4SMA530A 530A P4SMA530CA 530C 503.5 556.5 1 477 1 725 0.6 P4SMA540A 540A P4SMA540CA 540C 513 567 1 486 1 740 0.5 P4SMA550A 550A P4SMA550CA 550C 522.5 577.5 1 495 1 760 0.5 Notes: 1. Suffix ‘A’ denotes a 5 % tolerance unidirectional device. 3. For bidirectional devices with a VR of 10 volts or less, the IR limit is double. 2. Suffix ‘CA’ denotes a 5 % tolerance bidirectional device.

3312 - 2 mm SMD Trimming Potentiometer t - Time (ms) 150 0 1.02 .0 tr = 10 µsec. Peak Value IPPM T J = 25 ° C Pulse Width (td) is defined as the point where the peak current decays to 50 % of IPPM 10/1000 µsec. Waveform as defined by R.E.A. td 4.0 Half Value- IPPM 100 IPPM - Peak Pulse Current, % IRSM 3.00 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 1.0 0.6 0.8 0.4 0.2 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W)

60 Hz Resistive or

Peak Forward Surge Current (Amps) 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 11 0 100 1000 Unidirectional @VR T J = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR V BR - Reverse Breakdown Voltage (V) t - Time (ms) 150 0 1.02 .0 tr = 10 µsec. Peak Value IPPM T J = 25 ° C Pulse Width (td) is defined as the point where the peak current decays to 50 % of IPPM 10/1000 µsec. Waveform as defined by R.E.A. td 4.0 Half Value- IPPM 100 IPPM - Peak Pulse Current, % IRSM 3.00 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 1.0 0.6 0.8 0.4 0.2 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) Peak Forward Surge Current (Amps) 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 11 0 100 1000 Unidirectional @VR T J = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR V BR - Reverse Breakdown Voltage (V) t - Time (ms) 150 0 1.02 .0 tr = 10 µsec. Peak Value IPPM T J = 25 ° C Pulse Width (td) is defined as the point where the peak current decays to 50 % of IPPM 10/1000 µsec. Waveform as defined by R.E.A. td 4.0 Half Value- IPPM 100 IPPM - Peak Pulse Current, % IRSM 3.00 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 1.0 0.6 0.8 0.4 0.2 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) Peak Forward Surge Current (Amps) 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 11 0 100 1000 Unidirectional @VR T J = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR V BR - Reverse Breakdown Voltage (V) t - Time (ms) 150 0 1.02 .0 tr = 10 µsec. Peak Value IPPM T J = 25 ° C Pulse Width (td) is defined as the point where the peak current decays to 50 % of IPPM 10/1000 µsec. Waveform as defined by R.E.A. td 4.0 Half Value- IPPM 100 IPPM - Peak Pulse Current, % IRSM 3.00 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 1.0 0.6 0.8 0.4 0.2 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) Peak Forward Surge Current (Amps) 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 11 0 100 1000 Unidirectional @VR T J = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR V BR - Reverse Breakdown Voltage (V) t - Time (ms) 150 0 1.02 .0 tr = 10 µsec. Peak Value IPPM T J = 25 ° C Pulse Width (td) is defined as the point where the peak current decays to 50 % of IPPM 10/1000 µsec. Waveform as defined by R.E.A. td 4.0 Half Value- IPPM 100 IPPM - Peak Pulse Current, % IRSM 3.00 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 1.0 0.6 0.8 0.4 0.2 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) Peak Forward Surge Current (Amps) 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 11 0 100 1000 Unidirectional @VR T J = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR V BR - Reverse Breakdown Voltage (V) t - Time (ms) 150 0 1.02 .0 tr = 10 µsec. Peak Value IPPM T J = 25 ° C Pulse Width (td) is defined as the point where the peak current decays to 50 % of IPPM 10/1000 µsec. Waveform as defined by R.E.A. td 4.0 Half Value- IPPM 100 IPPM - Peak Pulse Current, % IRSM 3.00 100 05 025 75 100 150125 175 200 Ambient Temperature ( Peak Pulse Derating in Percent of Peak Power or Current °C) 1.0 0.6 0.8 0.4 0.2 0.0 05 025 75 100 150125 175 200 TL, Lead Temperature (°C) RM(AV) Steady State Power Dissipation (W) Peak Forward Surge Current (Amps) 1 25 10 20 50 100 Number of Cycles at 60 Hz Pulse Width 8.3 ms Single Half Sine-Wave 100 1.0 0.1 0.1 µs 1.0 µs 10 µs 10 ms TP, Pulse Width PP, Peak Power (KW) 100 µs 1.0 ms TA = 25 °C Non-repetitive Pulse Waveform Shown in Pulse Waveform Graph 100 1000 10000 11 0 100 1000 Unidirectional @VR T J = 25 ° C f = 1.0 MHz Vsig = 50 mVp-p CJ - Junction Capacitance (pF) Bidirectional V = 0 V Unidirectional V = 0 V Bidirectional @VR V BR - Reverse Breakdown Voltage (V) Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P4SMA Transient Voltage Suppressor Diode Series Rating & Characteristic Curves Pulse Derating Curve Maximum Non-Repetitive Surge Current Pulse Waveform Typical Junction Capacitance Pulse Rating Curve Steady State Power Derating Curve

3312 - 2 mm SMD Trimming Potentiometer Product Dimensions Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P4SMA Transient Voltage Suppressor Diode Series Recommended Footprint Physical Specifications No cathode band indicates bidirectional device DIMENSIONS: MM (INCHES) a c B F E C b MM (INCHES)DIMENSIONS: G D ACATHODE BAND (FOR UNIDIRECTIONAL PRODUCTS ONLY) a c B F E C b MM (INCHES)DIMENSIONS: G D ACATHODE BAND (FOR UNIDIRECTIONAL PRODUCTS ONLY) Dimension SMA (DO-214AC) A 3.99 - 4.57 (0.157 - 0.180) B 2.29 - 2.92 (0.090 - 0.115) C 1.25 - 1.65 (0.049 - 0.065) D 4.83 - 5.59 (0.190 - 0.220) E 0.05 - 0.203 (0.002 - 0.008) F 1.98 - 2.62 (0.078 - 0.103) G 0.76 - 1.52 (0.030 - 0.060) DIMENSIONS: MM (INCHES) Dimension SMA (DO-214AC) a (Max.) 2.70 (0.106) b (Min.) 2.10 (0.083) c (Min.) 1.27 (0.050)

F E T 120 ° D D1 C Index Hole W B 10 pitches (min.) Direction of Feed 10 pitches (min.) End Trailer Device Leader Start d CDDFN5-0504N - TVS/Steering Diode Array Packaging Information The product will be dispensed in tape and reel format (see diagram below). Devices are packed in accordance with EIA 481 standard specifications shown here. DIMENSIONS: MM (INCHES) REV. 06/16 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. P4SMA Transient Voltage Suppressor Diode Series Item Symbol SMA (DO-214AC)

7 Inch Reel 13 Inch Reel

Carrier Width A 2.90 ± 0.20 (0.114 ± 0.008) Carrier Length B 5.50 ± 0.20 (0.217 ± 0.008) Carrier Depth C 2.26 ± 0.20 (0.089 ± 0.008) Sprocket Hole d 1.50 ± 0.10 (0.061 ± 0.004) Reel Outside Diameter D 178 (7.008) 330 (12.992) Reel Inner Diameter D1 50.0 (1.969) MIN. Feed Hole Diameter D2 13.0 ± 0.20 (0.512 ± 0.008) Sprocket Hole Position E 1.75 ± 0.10 (0.069 ± 0.004) Punch Hole Position F 5.50 ± 0.05 (0.217 ± 0.002) Punch Hole Pitch P 4.00 ± 0.10 (0.157 ± 0.004) Sprocket Hole Pitch P0 4.00 ± 0.10 (0.157 ± 0.004) Embossment Center P1 2.00 ± 0.05 (0.079 ± 0.002) Overall Tape Thickness T 0.30 ± 0.10 (0.012 ± 0.004) Tape Width W 12.00 ± 0.30 (0.472 ± 0.012) Reel Width W1 18.4 (0.724) MAX. Quantity per Reel -- 1000 5,000