2P4M THINKISEMI | Alldatasheet
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DESCRIPTION: MAIN FEATURES Symbol Value Unit IT(RMS) 2 A IGT ≤200 μA VTM ≤1.5 V ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Storage junction temperature range Tstg -40-150 ℃ Operating junction temperature range Tj -40-110 ℃ Repetitive peak off-state voltage VDRM 600 V Repetitive peak reverse voltage VRRM 600 V RMS on-state current IT(RMS) 2 A @ (TC=72℃) Non repetitive surge peak on-state current (tp=10ms) ITSM 20 A I2t value for fusing (tp=10ms) I2t 2 A2s Critical rate of rise of on-state current dI/dt 50 A/μs Peak gate current (tp=20μs, Tj=110℃) IGM 0.2 A Peak gate power (tp=20μs, Tj=110℃) PGM 0.5 W Average gate power dissipation(Tj=110℃) PG(AV) 0.1 W A(2) K(1) G(3) RGK ThinkiSemi 2P4M SCR with the parallel resistor between Gate and Cathode are especially recommended for use on straight hair, igniter, anion generator etc.. Internal structure TO-202 Pkg Outline 2P4M Pb Free Plating Product 2P4M
2.0 Ampere Passivated Process Thyristor---Sensitive Gate SCR
© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3Rev.05
ELECTRICAL CHARACTERISTICS (Tj=25℃ unless otherwise specified) Symbol Test Condition Value Unit MIN. TYP. MAX. IGT VD=12V RL=33Ω - 40 200 μA VGT - 0.5 0.8 V VGD VD=VDRM Tj=110℃ 0.2 - - V IL IG=1.2 IGT - - 3 mA IH IT=0.05A - - 2 mA dV/dt VD=60%VDRM Tj=110℃ RGK=1KΩ 10 - - V/μs STATIC CHARACTERISTICS Symbol Parameter Value(MAX) Unit VTM ITM=4A tp=380μs Tj=25℃ 1.5 V IDRM VD=VDRM VR=VRRM Tj=25℃ 5 μA IRRM Tj=110℃ 100 μA THERMAL RESISTANCES Symbol Parameter Value Unit Rth(j-c) junction to case ℃/W TO-202 Heat sink 2P4M © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/3Rev.05
FIG.3: Surge peak on-state current versus number of cycles FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.1 Maximum power dissipation versus RMS on-state current FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponging value of I t (dI/dt < 50A/μs) FIG.4: On-state characteristics (maximum values) FIG.2: RMS on-state current versus case temperature IT(RMS) (A) TO-202 P(w) 0 0.5 1 1.5 2 2.5 IT(RMS) (A) Tc (℃)0 0 25 50 75 100 125 1 10 100 1000 Number of cycles0 ITSM (A) ITM (A) VTM (V) 0 1 2 3 4 5 Tj=25℃ Tj=Tjmax tp(ms) 0.01 0.1 1 10 100 300 ITSM (A), I t (A s) -40 0 40 80 120 IGT,IH,IL(Tj)/IGT,IH,IL(Tj=25℃) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 IGT IH&IL Tj(℃) 2 2 ITSM I t2 0.1 α=180° One cycle tp=10ms dI/dt 2P4M © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/3Rev.05