P4KE CHONGQING | Alldatasheet
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Technical content
- 387 - P4KE SERIES TRANSIENT VOLTAGE SUPPRESSORS FEATURE .Plastic package has Underwriters Laboratory Flammability Classification 94V-0 .400W surge capability at10× 100us waveform, Duty cycle: 0.01% .Excellent clamping capability .Low zener impedance .Fast response time：Typically less then 1.0ps from 0 volts to V BR for unidirectional and 5.0ns for bidirectional .Typical IR less then 1 μΑ above 10V .High temperature soldering guaranteed: 260°C /10 seconds /.375"lead length / 5lbs tension MECHANICAL DATA .Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C .Case: Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy .Polarity: color band denotes cathode except bipolar V oltage Range 6.8 to 400 V
400 W Peak Power
.787(20.0) MIN. .205(5.2) .166(4.2) .787(20.0) MIN. .107(2.7) .080(2.0) DIA. .032(0.8) .025(0.65) DIA. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25° C ambient temperature unless otherwise stated. Single-phase, half-wave, 60HZ, resistive or inductive load. For capacotive load, derate current by 20% Type Number SYMBOL Value units Peak Power Dissipation at TA=25°C,Tp=1ms (note 1) PPPM Minimum 400 W Steady State Power Dissipation .375"lead length at TL=75°C (note 2) PD 1.0 W Peak Forward Surge Current 8.3ms Single Half Sine-wave Superimpo sed on Rated Load (JEDEC method) (note 3) IFSM 40 A Storage Temperature TSTG -55 to +150 °C Operating Junction Temperature TJ -55 to +125 °C Note: 1. Non-repetitive Current Pulse Per Fig.3 and Derated above Ta=25°C Per Fig.2 . 3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minutes Maximum. Devices for Bipolar Applications 1. For Bidirectional Use C or CA Suffix for Types P4KE6.8 thru Types P4KE400. 2. Electrical Characteristics Apply in Both Directions.
- 388 - ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted) Device Nominal V oltage (V) Breakdown V oltage @IT VBR (V)(note1) Test Current IT (mA) Stand- Off V oltage VWM (V) Maximum Reverse Leakage @VWM ID(μΑ) Maximum Peak Pulse Current IPPM (note2)(A) Maximum Clamping V oltage @IPPM VC(V) Maximum Temperature Coefficient of VBR(%/°C) Min Max UNI BI
- 389 - Device Nominal V oltage (V) Breakdown V oltage @IT VBR (V)(note1) Test Current IT (mA) Stand- Off V oltage VWM (V) Maximum Reverse Leakage @VWM ID(μΑ) Maximum Peak Pulse Current IPPM (note2)(A) Maximum Clamping V oltage @IPPM VC(V) Maximum Temperature Coefficient of VBR(%/°C) Min Max UNI BI Note: 1. VBR measured after IT applied for 300μs, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure 3 and derate per Figure 2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. All terms and symbols are consistent with ANSI/IEEE C62.35.