P401KW

P400 IRF | Alldatasheet

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Technical content

Features

Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 VRRM , VDRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved

Bulletin I2776 rev. E 04/99 www.irf.com VRRM maximum repetitive VRSM maximum non- V DRM maximum I RRM max. Type number peak reverse voltage repetitive peak reverse repetitive peak off-state@ T J max. voltage voltage VVV m A P401, P421, P431 400 500 400 10 P402, P422, P432 600 700 600 P403, P423, P433 800 900 800 P404, P424, P434 1000 1100 1000 P405, P425, P435 1200 1300 1200 ID Maximum DC output current 40 A @ T C = 80°C, full bridge circuits ITSM Max. peak one-cycle 385 A t = 10ms No voltage IFSM non-repetitive on-state 400 t = 8.3ms reapplied or forward current 325 t = 10ms 100% V RRM 340 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 745 A 2s t = 10ms No voltage Initial T J = TJ max. 680 t = 8.3ms reapplied 530 t = 10ms 100% V RRM 480 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 7450 A 2√s t = 0.1 to 10ms, no voltage reapplied I2t for time tx = I2√t . √tx V T(TO)1 Low value of threshold voltage 0.83 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. V T(TO)2 High value of threshold voltage 1.03 (I > π x IT(AV)), TJ = TJ max. rt1 Low level value of on-state slope resistance rt2 High level value of on-state slope resistance V TM Max. peak on-state or T J = 25°C, ITM = π x IT(AV) V FM forward voltage drop T J = 25°C, ITM = π x IF(AV) di/dt Maximum non repetitive rate of T J = 125°C from 0.67 VDRM rise of turned on current I TM = π x IT(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs IH Maximum holding current 130 mA T J = 25°C anode supply = 6V, resistive load IL Maximum latching current 250 mA T J = 25°C anode supply = 6V, resistive load Parameter P400 Units Conditions On-state Conduction V 9.61 7.01 m Ω (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.4 V

200 A/µs

Bulletin I2776 rev. E 04/99 www.irf.com dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current at VRRM , VDRM IRRM Max peak reverse leakage current 100 µA T J = 25°C 50Hz, circuit to base, all terminal shorted, TJ = 25°C, t = 1s Blocking Parameter P400 Units Conditions 200 V/µs T J = 125°C, exponential to 0.67 VDRM gate open 10 mA T J = 125°C, gate open circuit VINS RMS isolation voltage 2500 V PGM Maximum peak gate power 8 PG(AV) Maximum average gate power 2 IGM Maximum peak gate current 2 A - VGM Maximum peak negative gate voltage VGT Maximum gate voltage required 3 T J = - 40°C to trigger 2 T J = 25°C Anode Supply = 6V resistive load 1T J = 125°C IGD Maximum gate current 90 T J = - 40°C required to trigger 60 mA T J = 25°C Anode Supply = 6V resistive load

35 T J = 125°C

Parameter P400 Units Conditions Triggering W V

0.2 V T J = 125°C, rated VDRM applied

2m A T J = 125°C, rated VDRM applied TJ Max. operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 125 R thJC Max. thermal resistance, 1.05 K/W DC operation per junction junction to case R thCS Max. thermal resistance, 0.10 K/W Mounting surface, smooth and greased case to heatsink T Mounting torque, base to heatsink 4 Nm wt Approximate weight 58 (2.0) g (oz) Parameter P400 Units Conditions Thermal and Mechanical Specification A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound

Bulletin I2776 rev. E 04/99 www.irf.com Outline Table * To complete code refer to voltage ratings table, i.e.: for 600V P410.W complete code is P402W 12.7 (0.50) 5.2 (0.20) 32.5 (1.28) M AX. 25 (0.98) M AX. 2.5 (0.1 0) M AX. 45 (1.77) 1.65 (0.06) 63.5 (2.50) Faston 6.35x0.8 (0.25x0.03) 15.5 (0.61) M AX. 23.2 (0.91) 12.7 (0.50) 4.6 (0.18) 4.6 (0.18) 33.8 (1.33) 48.7 (1.91) All dimensions in millimeters (inches) Circuit "0" Circuit "2" Circuit "3" Terminal Positions Schematic diagram diagram Single Phase Single Phase Single Phase Hybrid Bridge Hybrid Bridge All SCR Common Cathode Doubler Bridge Basic series P40. P42. P43. With voltage P40.K P42.K P43.K suppression With free-wheeling P40.W - - diode With both voltage suppression and P40.KW - - free-wheeling diode Circuit Type and Coding * (-) AC1 AC2 (+) (-) AC1 AC2 (+) AC2 (-) AC1 (+)

Bulletin I2776 rev. E 04/99 www.irf.com Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink) Fig. 2 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C)

10 K/W

5 K/W

3 K/W

2 K/W

1.5 K/W

1 K/W

R = 0.7 K/W - Delta R thSA 100 120 0 5 10 15 20 25 30 35 40 Total Output Current (A) Maximum Total Power Loss (W) 180° (Sine) P400 Series T = 125°C J 0 5 10 15 20 Average On-state Current (A) Maximum Average On-state Power Loss (W) RMS Limit 180° 120° 90° 60° 30° Conduction angle P400 Series T = 125°C Per Junction J 0 5 10 15 20 25 30 35 DC 180° 120° 90° 60° 30° Average On-state Current (A) Maximum Average On-state Power Loss (W) RMS Limit Conduction Period P400 Series T = 125°C Per Junction J Fig. 5 - On-state Voltage Drop CharacteristicsFig. 4 - Current Ratings Characteristics 100 110 120 130 0 5 10 15 20 25 30 35 40 45 Total Output Current (A) Maximum Allowable Case Temperature (°C) Fully Turned-on 180° (Rect) 180° (Sine) P400 Series Per Module 100 1000 Instantaneous On-state C urrent (A) Instantaneous On-state Voltage (V) P400 Series Per Junction T = 25 °C T = 125 °C J J

Bulletin I2776 rev. E 04/99 www.irf.com Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 9 - Gate Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 150 175 200 225 250 275 300 325 350 1 10 100 Num ber Of Equal Amplit ude Half Cy cle Current Pulses (N ) Peak Half S ine Wave On-state Current (A) P400 Series Per Junction Initial T = 125 °C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J At Any Rated Load Condition And With Rated V Applied Following Surge.RRM 150 200 250 300 350 400 0.01 0.1 1 Pulse Train Duration (s) Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V ReappliedRRM J P400 Series Per Junction 0.01 0.1 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) thJCTransient Thermal Impedance Z (K/W) Steady State Value: R = 1.05 K/W (DC Operation) thJC P400 Series Per Junction 0.1 100 0.001 0.01 0.1 1 10 100 (b) (a) Rectangular gate pulse (4) (3) (2) (1) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) Frequency Limited By PG(AV) TJ = -40 °C TJ = 25 °C TJ = 125 °C a)Recommended load line for b)Recommended load line for (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms IGD rated di/dt : 10V, 20 ohms, tr <= 1µs rated di/dt : 10 V, 65 ohms, tr <= 1µs P400 Series VGD

Bulletin I2776 rev. E 04/99 www.irf.com EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY:Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST:K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.