P3055LLG ETC2 | Alldatasheet

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Technical content

1 NOV-05-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LLG SOT-223 Lead-Free NIKO-SEM ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±20 V TC = 25 °C 6 Continuous Drain Current TC = 100 °C ID 3.6 Pulsed Drain Current1 I DM 22 A Avalanche Energy L = 0.1mH E AS 60 Repetitive Avalanche Energy2 L = 0.05mH E AR 3 mJ TC = 25 °C 3 Power Dissipation TC = 100 °C PD 1.5 W Operating Junction & Storage Temperature Range T j, Tstg -55 to 150 Lead Temperature (1/16” from case for 10 sec.) T L 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RθJC 12 Junction-to-Ambient RθJA 42 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% ELECTRICAL CHARACTERISTICS (T C = 25 °C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250µA 25 Gate Threshold Voltage V GS(th) VDS = VGS, ID = 250µA 0.8 1.2 2.5 V Gate-Body Leakage I GSS V DS = 0V, VGS = ±20V ±250 nA VDS = 20V, VGS = 0V 25 Zero Gate Voltage Drain Current I DSS VDS = 20V, VGS = 0V, TJ = 125 °C 250 µA On-State Drain Current1 I D(ON) V DS = 10V, VGS = 10V 6 A 1. GATE 2. DRAIN 3. SOURCE PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 25 90mƸ 6A G D S

2 NOV-05-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LLG SOT-223 Lead-Free NIKO-SEM VGS = 5V, ID = 3A 70 120Drain-Source On-State Resistance1 RDS(ON) VGS = 10V, ID = 6A 50 90 mƸ Forward Transconductance1 g fs V DS = 15V, ID = 6A 16 S DYNAMIC Input Capacitance C iss 450 Output Capacitance C oss 200 Reverse Transfer Capacitance C rss VGS = 0V, VDS = 15V, f = 1MHz pF Total Gate Charge2 Q g 15 Gate-Source Charge2 Q gs 2.0 Gate-Drain Charge2 Q gd VDS = 0.5V(BR)DSS, VGS = 10V, ID = 3A 7.0 nC Turn-On Delay Time2 t d(on) 6.0 Rise Time2 t r VDS = 15V, RL = 1Ƹ 6.0 Turn-Off Delay Time2 t d(off) ID ≅ 10A, VGS = 10V, RGS = 2.5Ƹ 20 Fall Time2 t f 5.0 nS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C) Continuous Current I S 6 Pulsed Current3 I SM 35 A Forward Voltage1 V SD I F = IS, VGS = 0V 1.5 V Reverse Recovery Time t rr 30 nS Peak Reverse Recovery Current I RM(REC) IF = IS, dlF/dt = 100A / µS 15 A Reverse Recovery Charge Q rr 0.043 µC 1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2Ĉ. 2Independent of operating temperature. 3Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P3055LLG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

3 NOV-05-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LLG SOT-223 Lead-Free NIKO-SEM

4 NOV-05-2004

N-Channel Logic Level Enhancement Mode Field Effect Transistor P3055LLG SOT-223 Lead-Free NIKO-SEM SOT-223 MECHANICAL DATA mm mm Dimension Min. Typ. Max. Dimension Min. Typ. Max. C 2.9 3 3.1 J 0.32 0.4 D 2.27 2.3 2.33 K 0 ° 10 ° F 1.5 1.6 1.7 M G 6.3 6.5 6.7 N