P2N2907A MOTOROLA | Alldatasheet
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1Motorola Small–Signal Transistors, FETs and Diodes Device Data /C0065/C0109/C0112/C0108/C0105/C0102/C0105/C0101/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –600 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/ °C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 Watts mW/ °C Operating and Storage Junction Temperature Range TJ, Tstg –55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to AmbientR /C0113JA 200 °C/W Thermal Resistance, Junction to Case R /C0113JC 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = –10 mAdc, IB = 0) V(BR)CEO –60 — Vdc Collector–Base Breakdown Voltage (IC = –10 /C0109Adc, IE = 0) V(BR)CBO –60 — Vdc Emitter–Base Breakdown Voltage (IE = –10 /C0109Adc, IC = 0) V(BR)EBO –5.0 — Vdc Collector Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) ICEX — –50 nAdc Collector Cutoff Current (VCB = –50 Vdc, IE = 0) (VCB = –50 Vdc, IE = 0, TA = 150°C) ICBO –0.01 –10 µAdc Emitter Cutoff Current (VEB = –3.0 Vdc) IEBO — –10 nAdc Collector Cutoff Current (VCE = –10 V) ICEO — –10 nAdc Base Cutoff Current (VCE = –30 Vdc, VEB(off) = –0.5 Vdc) IBEX — –50 nAdc 1. Pulse Test: Pulse Width /C0118 300 /C0109s, Duty Cycle /C0118 2.0%. Order this document by P2N2907A/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0080/C0050/C0078/C0050/C0057/C0048/C0055/C0065 CASE 29–04, STYLE 17 TO–92 (TO–226AA) 2 3 Motorola, Inc. 1996 COLLECTOR BASE EMITTER
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
- Pulse Test: Pulse Width /C0118 300 /C0109s, Duty Cycle /C0118 2.0%.
- fT is defined as the frequency at which |hfe| extrapolates to unity.
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 7. Frequency Effects Figure 8. Source Resistance Effects Figure 9. Capacitances Figure 10. Current–Gain — Bandwidth Product Figure 11. “On” Voltage Figure 12. Temperature Coefficients
/C0080/C0050/C0078/C0050/C0057/C0048/C0055/C0065 5Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. R A P J L F B K G H SECTION X–X CV D N N X X SEATING PLANE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.022 0.41 0.55 F 0.016 0.019 0.41 0.48 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 N 0.080 0.105 2.04 2.66 STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER CASE 029–04 (TO–226AA) ISSUE AD
/C0080/C0050/C0078/C0050/C0057/C0048/C0055/C0065
6 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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