SMB SPSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

Description of Part Number P thyristor for circuit protection Part Number P 030 0 S B C o d e ① ② ③ ④ ⑤ M a i n S u f f i x PRODUCT TYPE Product type P TYPE ② MEDIAN VOLTAGE RATING Code Median voltage rating 030 30 V ③ CONSTRUCTION VARIABLE Code Product shape

0 One chip

1 Unidirectional part

2 Two chips

3 Three chips

④ PACKAGE TYPE Code PACKAGE TYPE E T O–92 M D O-27 S SMB/DO–214AA R SMA/DO-214AC L DO -15 ⑤ IPP RATING Code IPP RATING B 250 A (8x20 µs) C 400 A (8x20 µs) D 1000 A (8x20 µs) A 150 A (8x20 µs)

Applications

When protecting telecommunication circuits, P devices are connected across Tip and Ring for metallic protection and across Tip and Ground and Ring and Ground for longitudinal protection. They typically are placed behind some type of current-limiting device. Common applications include:

  • Central office line cards (SLICs)
  • T-1/E-1, ISDN, and xDSL transmission equipment
  • Customer Premises Equipment (CPE) such as phones, modems, and caller ID adjunct boxes
  • PBXs, KSUs, and other switches
  • Primary protection including main distribution frames, five-pin modules, building entrance equipment, and station protection modules
  • Data lines and security systems
  • CATV line amplifiers and power inserters
  • Sprinkler systems Thyristor/SMB Series

DO-214AA (SMB J-Bend) 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.073 (1.85) 0.193 (4.90) 0.160 (4.06) 0.102 (2.6) 0.083 (2.1) 0.220 (5.59) 0.195 (4.95) 0.060 (1.52) 0.030 (0.76) Dimensions in inches and(millimeters) 0.012 (0.305) 0.006 (0.152) P Device （S series） DO-214AA P solid state protection devices protect telecommunications equipment such as modems, line cards, fax machines, and other CPE. P devices are used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21 and K.45, IEC 60950, UL 60950, and TIA-968 (formerly known as FCC Part 68). Electrical Parameters Part Number * V RM Volts V S Volts V T Volts I DRM µAmps IS mAmps I T Amps ** I H mAmps C O pF P0080S_ 6 25 4 5 800 2.2 50 50-125 P0300S_ 25 40 4 5 800 2.2 150 70-175 P0640S_ 58 77 4 5 800 2.2 150 55-140 P0720S_ 65 88 4 5 800 2.2 150 55-140 P0900S_ 75 98 4 5 800 2.2 150 55-140 P2300S_ 190 260 4 5 800 2.2 150 45-115 P2600S_ 220 300 4 5 800 2.2 150 40-100 P3100S_ 275 350 4 5 800 2.2 150 35-90 P3500S_ 320 400 4 5 800 2.2 150 30-75 Surge Ratings Series I PP 2x10 µs Amps I PP 8x20 µs Amps I PP 10x160 µs Amps I PP 10x560 µs Amps I PP 10x1000 µs Amps I TSM 60 Hz Amps di/dt Amps/µs A 150 150 90 50 45 20 500 B 250 250 150 100 80 30 500 C 500 400 200 150 100 50 500 Thermal Considerations Package DO-214AA Symbol Parameter Value Unit T J Operating Junction Temperature -40 to +150 °C T S Storage Temperature Range -65 to +150 °C R B J A Thermal Resistance: Junction to Ambient 90 °C/W * For i ndivi dual “SA”, “S B”, and “SC”surge ratings, see table below Thyristor/SMB Series 0.012 (0.3) MAX.

The Basic Characteristic of the P „ The principle introduction Operation In the standby mode, P devices exhibit a high off-state impeda nce, eliminating excessive leakage currents and appearing transparent to the circuits they protec t. Upon appli cation of a voltage exce eding the swit ching voltage (V S ), P devices crowbar and simulate a short circuit condition until the curre nt flowing throug h the device is either interrupted or drops below the P device’s holding current (I H ). Once this occurs, P devices reset and return to their high off-state impedance. Figure1 V-I Characteristics Figure2 tr x td Pulse Wave-form F i g u r e 3 Normalized V S Change versus Junction Temperature F i g u r e 4 Normalized DC Holdin g Current Thyristor/SMB Series