P0640ECMC LITTELFUSE | Alldatasheet
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MicroCapacitance (MC) SIDACtor Device http://www.littelfuse.com 2 - 18 © 2004 Littelfuse, Inc. +1 972-580-7777 SIDACtor ® Data Book and Design Guide MicroCapacitance (MC) SIDACtor Device The TO-92 MC SIDACtor series is intended for applications sensitive to load values. Typically, high speed connections require a lower capacitance. CO values for MC devices are 40% lower than a standard EC part. This MC SIDACtor series is used to enable equipment to meet various regulatory requirements including GR 1089, ITU K.20, K.21, and K.45, IEC 60950, UL 60950, and TIA-968-A (formerly known as FCC Part 68) without the need of series resistors. * For surge ratings, see table below. General Notes:
- All measurements are made at an ambient temperature of 25 °C. I PP applies to -40 °C through +85 °C temperature range.
- I PP is a repetitive surge rating and is guaranteed for the life of the product.
- Listed SIDACtor devices are bi-directional. All electrical parameters and surge ratings apply to forward and reverse polarities.
- V DRM is measured at IDRM.
- V S is measured at 100 V/µs.
- Special voltage (V S and VDRM) and holding current (IH) requirements are available upon request.
- Off-state capacitance (C O) is measured at 1 MHz with a 2 V bias. Electrical Parameters Part Number * VDRM Volts VS Volts VT Volts IDRM µAmps IS mAmps IT Amps IH mAmps CO pF P0640EC MC 58 77 4 5 800 2.2 150 60 P1500EC MC 140 180 4 5 800 2.2 150 50 P2600EC MC 220 300 4 5 800 2.2 150 40 P3100EC MC 275 350 4 5 800 2.2 150 40 Surge Ratings Series IPP 2x10 µs Amps IPP 8x20 µs Amps IPP 10x160 µs Amps IPP 10x560 µs Amps IPP 10x1000 µs Amps ITSM 60 Hz Amps di/dt Amps/µs C 500 400 200 150 100 50 500
MicroCapacitance (MC) SIDACtor Device © 2004 Littelfuse, Inc. 2 - 19 http://www.littelfuse.com SIDACtor® Data Book and Design Guide +1 972-580-7777 Data Sheets Thermal Considerations Package Symbol Parameter Value Unit TO-92 TJ Operating Junction Temperature Range -40 to +150 °C TS Storage Temperature Range -65 to +150 °C RθJA Thermal Resistance: Junction to Ambient 90 °C/W IH IT IS IDRM VDRMVT +V-V VS IH IT IS IDRM VDRMVT +V-V VS V-I Characteristics 100 tr td Peak Value Half Value t – Time (µs) IPP – Peak Pulse Current – %IPP tr = rise time to peak value td = decay time to half value Waveform = tr x td tr x td Pulse Wave-form -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (TJ) – ˚C Percent of VS Change – % 25 ˚C Normalized VS Change versus Junction Temperature 0.4 -40 -20 0 20 40 60 80 100 120 140 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Case Temperature (TC ) – ˚C Ratio of IH IH (TC = 25 ˚C) 25 ˚C Normalized DC Holding Current versus Case Temperature