P124K

P100 IRF | Alldatasheet

Document overview

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Technical content

Features

Glass passivated junctions for greater reliability Electrically isolated base plate Available up to 1200 VRRM , VDRM High dynamic characteristics Wide choice of circuit configurations Simplified mechanical design and assembly UL E78996 approved

Description

The P100 series of Integrated Power Circuits consists of power thyristors and power diodes configured in a single package. With its isolating base plate, mechanical designs are greatly simpli- fied giving advantages of cost reduction and reduced size. Applications include power supplies, control cir- cuits and battery chargers.

Bulletin I27125 rev. A 04/99 www.irf.com VRRM maximum repetitive VRSM maximum non- V DRM maximum I RRM max. Type number peak reverse voltage repetitive peak reverse repetitive peak off-state@ T J max. voltage voltage VVV m A P101, P121, P131 400 500 400 10 P102, P122, P132 600 700 600 P103, P123, P133 800 900 800 P104, P124, P134 1000 1100 1000 P105, P125, P135 1200 1300 1200 ELECTRICAL SPECIFICATIONS Voltage Ratings ID Maximum DC output current 25 A @ T C = 85°C, full bridge ITSM Max. peak one-cycle 357 t = 10ms No voltage IFSM non-repetitive on-state 375 t = 8.3ms reapplied or forward current 300 t = 10ms 100% V RRM 315 t = 8.3ms reapplied Sinusoidal half wave, I2t Maximum I 2t for fusing 637 t = 10ms No voltage Initial T J = TJ max. 580 t = 8.3ms reapplied 450 t = 10ms 100% V RRM 410 t = 8.3ms reapplied I2√t Maximum I 2√t for fusing 6365 A 2√s t = 0.1 to 10ms, no voltage reapplied I2t for time tx = I2√t . √tx V T(TO) Max. value of threshold voltage 0.82 V T J = 125°C rt1 Max. level value of on-state slope resistance V TM Max. peak on-state or V FM forward voltage drop di/dt Maximum non repetitive rate of T J = 125°C from 0.67 VDRM rise of turned on current I TM = π x IT(AV), Ig = 500mA, tr < 0.5µs, tp > 6µs IH Maximum holding current 130 mA T J = 25°C anode supply = 6V, resistive load, gate open IL Maximum latching current 250 mA T J = 25°C anode supply = 6V, resistive load Parameter P100 Units Conditions On-state Conduction A A2s 12 m Ω TJ = 125°C, Av. power = VT(TO) * IT(AV) + rt + (IT(RMS))2

1.35 V T J = 25°C, ITM = π x IT(AV)

200 A/µs

Bulletin I27125 rev. A 04/99 www.irf.com dv/dt Maximum critical rate of rise of off-state voltage IRRM Max. peak reverse and off-state IDRM leakage current at VRRM , VDRM IRRM Max peak reverse leakage current 100 µA T J = 25°C 50Hz, circuit to base, all terminal shorted, TJ = 25°C, t = 1s Blocking Parameter P100 Units Conditions 200 V/µs T J = 125°C, exponential to 0.67 VDRM gate open 10 mA T J = 125°C, gate open circuit VINS RMS isolation voltage 2500 V PGM Maximum peak gate power 8 PG(AV) Maximum average gate power 2 IGM Maximum peak gate current 2 A - VGM Maximum peak negative gate voltage VGT Maximum gate voltage required 3 T J = - 40°C to trigger 2 T J = 25°C Anode Supply = 6V resistive load 1T J = 125°C IGD Maximum gate current 90 T J = - 40°C required to trigger 60 mA T J = 25°C Anode Supply = 6V resistive load

35 T J = 125°C

Parameter P100 Units Conditions Triggering W V

0.2 V T J = 125°C, rated VDRM applied

2m A T J = 125°C, rated VDRM applied TJ Max. operating temperature range-40 to 125 Tstg Max. storage temperature range -40 to 125 R thJC Max. thermal resistance, 2.24 K/W DC operation per junction junction to case R thCS Max. thermal resistance, 0.10 K/W Mounting surface, smooth and greased case to heatsink T Mounting torque, base to heatsink 4 Nm wt Approximate weight 58 (2.0) g (oz) Parameter P100 Units Conditions Thermal and Mechanical Specification A mounting compound is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound

Bulletin I27125 rev. A 04/99 www.irf.com Outline Table * To complete code refer to voltage ratings table, i.e.: for 600V P10.W complete code is P102W Circuit "0" Circuit "2" Circuit "3" Terminal Positions Schematic diagram diagram Single Phase Single Phase Single Phase Hybrid Bridge Hybrid Bridge All SCR Common Cathode Doubler Bridge Basic series P10. P12. P13. With voltage P10.K P12.K P13.K suppression With free-wheeling P10.W - - diode With both voltage suppression and P10.KW - - free-wheeling diode Circuit Type and Coding * 12.7 (0.50) 5.2 (0.20) 32.5 (1.28 ) M AX. 25 (0.98) M AX. 2.5 (0.10) M AX. 45 (1.77) 1.65 (0.06) 63.5 (2.50) Faston 6.35x0.8 (0.25x0.03) .5 (0.61)M AX. 23.2 (0.91) 12.7 (0.50) 4.6 (0.18) 4.6 (0.18) 33.8 (1.33) 48.7 (1.91) All dimensions in millimeters (inches) (-) AC1 AC2 (+) (-) AC1 AC2 (+) AC2 (-) AC1 (+)

Bulletin I27125 rev. A 04/99 www.irf.com Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink) Fig. 2 - On-state Power Loss Characteristics Fig. 3 - On-state Power Loss Characteristics 0 5 10 15 180° 120° 90° 60° 30° Average On-state Current (A) Maximum Average On-state Power Loss (W) RMS Limit Conduction angle P100 Series T = 125°C Per Junction J 0 5 10 15 20 Average On-state Current (A) Maximum Average On-state Power Loss (W) Conduct ion Period DC 180° 120° 90° 60° 30° RMS Limit P100 Series T = 125°C Per Junction J Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Voltage Drop Characteristics 100 1000 0123456 P100 Series Per Junction T = 125 °C T = 25 °C J J Instantaneous On-state Current (A) Instantaneous On-state Voltage (V) 0 25 50 75 100 125 Maximum Allowable Ambient Temperature (°C)

2 K/W

3 K/W

5 K/W

7 K/W

10 K/W

R = 1 .5 K/W - D elta R thSA 0 5 10 15 20 25 180° (Sine) Total Output Current (A) Maximum Total Power Loss (W) P100 Series T = 125°C J 100 110 120 130 0 5 10 15 20 25 30 180° (Sine) 180° (Rect) Fully Turned.on Total Output Current (A) Maximum Allowable Case Temperature (°C) P100 Series Per Module

Bulletin I27125 rev. A 04/99 www.irf.com Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current Fig. 9 - Gate Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristics 150 200 250 300 350 1 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Peak Half Sine Wave On-state Current (A) P100 Series Per Junction At Any Rated Load Condition And With Rated V Applied Following Surge.RRM Initial T = 125°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s J 100 150 200 250 300 350 400 0.01 0.1 1 Pulse Train Duration (s) Peak Half Sine Wave On-state Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T = 125°C No Voltage Reapplied Rated V ReappliedRRM J P100 Series Per Junction 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Steady State Value: R = 2.24K/W (DC Operation) P100 Series Per Junction thJC thJCTransient Thermal Impedance Z (K/W) 0.1 100 0.001 0.01 0.1 1 10 100 (b) (a) Rectangular gate pulse (4) (3) (2) (1) Instantaneous Gate Current (A) Instantaneous Gate Voltage (V) Frequency Limited By PG(AV) TJ = -40 °C TJ = 25 °C TJ = 125 °C a)Recommended load line for b)Recommended load line for (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms IGD P100 Series rated di/dt : 10V, 20 ohms, tr <= 1µs rated di/dt : 10 V, 65 ohms, tr <= 1µs VGD

Bulletin I27125 rev. A 04/99 www.irf.com EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408. IR CANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801. IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933. IR ITALY:Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220. IR FAR EAST:K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086. IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630. http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.