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Technical content

Features

  • Low ON Resistance
  • Low Gate Charge
  • ESD Diode−Protected Gate
  • 100% Avalanche Tested
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol NDF Unit Drain−to−Source Voltage VDSS 500 V Continuous Drain Current, R/C0113JC (Note 1) ID 12 A Continuous Drain Current TA = 100°C, R/C0113JC (Note 1) ID 7.4 A Pulsed Drain Current, tP = 10 /C0109s IDM 44 A Power Dissipation, R/C0113JC PD 39 W Gate−to−Source Voltage VGS ±30 V Single Pulse Avalanche Energy, ID = 10 A EAS 420 mJ ESD (HBM) (JESD22−A114) Vesd 4000 V RMS Isolation Voltage T A = 25°C) (Figure 14) VISO 4500 V Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns MOSFET dV/dt dV/dt 60 V/ns Continuous Source Current (Body Diode) IS 12 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited by maximum junction temperature 2. I d ≤ 10.5 A, di/dt ≤ 200 A//C0109s, VDD ≤ BVDSS, TJ ≤ 150°C. N−Channel MARKING DIAGRAM A = Location Code Y = Year WW = Work Week G, H = Pb−Free, Halogen−Free Package www.onsemi.com VDSS RDS(ON) (MAX) @ 4.5 A 500 V 0.52 /C0087 NDF11N50ZG or NDF11N50ZH AYWW Gate Source Drain NDF11N50ZG NDF11N50ZH TO−220FP CASE 221AH G (1) D (2) S (3) See detailed ordering and shipping information on page 6 of this data sheet.

ORDERING INFORMATION

www.onsemi.com THERMAL RESISTANCE Parameter Symbol NDF11N50Z Unit Junction−to−Case (Drain) R/C0113JC 3.2 °C/W Junction−to−Ambient Steady State (Note 3) R/C0113JA 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Test Conditions Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA BVDSS 500 V Breakdown Voltage Temperature Co- efficient Reference to 25°C, ID = 1 mA /C0068BVDSS/ /C0068TJ

0.6 V/°C

Drain−to−Source Leakage Current VDS = 500 V, VGS = 0 V 25°C IDSS 1 /C0109A 125°C 50 Gate−to−Source Forward Leakage VGS = ±20 V IGSS ±10 /C0109A ON CHARACTERISTICS (Note 4) Static Drain−to−Source On−Resistance VGS = 10 V, ID = 4.5 A RDS(on) 0.48 0.52 /C0087 Gate Threshold Voltage VDS = VGS, ID = 100 /C0109A VGS(th) 3.0 3.9 4.5 V Forward Transconductance VDS = 15 V, ID = 4.5 A gFS 7.7 S DYNAMIC CHARACTERISTICS Input Capacitance (Note 5) VDS = 25 V, VGS = 0 V, f = 1.0 MHz Ciss 1097 1375 1645 pF Output Capacitance (Note 5) Coss 132 166 199 Reverse Transfer Capacitance (Note 5) Crss 30 40 50 Total Gate Charge (Note 5) VDD = 250 V, ID = 10.5 A, VGS = 10 V Qg 23 46 69 nC Gate−to−Source Charge (Note 5) Qgs 4.5 8.7 13 Gate−to−Drain (“Miller”) Charge (Note 5) Qgd 12.5 25 37.5 Plateau Voltage VGP 6.2 V Gate Resistance Rg 1.4 /C0087 RESISTIVE SWITCHING CHARACTERISTICS Turn−On Delay Time VDD = 250 V, ID = 10.5 A, VGS = 10 V, RG = 5 Ω td(on) 15 ns Rise Time tr 32 Turn−Off Delay Time td(off) 40 Fall Time tf 23 SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted) Diode Forward Voltage IS = 10.5 A, VGS = 0 V VSD 1.6 V Reverse Recovery Time VGS = 0 V, VDD = 30 V IS = 10.5 A, di/dt = 100 A//C0109s trr 310 ns Reverse Recovery Charge Qrr 2.5 /C0109C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Insertion mounted 4. Pulse Width ≤ 380 /C0109s, Duty Cycle ≤ 2%. 5. Guaranteed by design.

www.onsemi.com Order Number Package Shipping NDF11N50ZG TO−220FP (Pb−Free, Halogen−Free)

50 Units / Rail

NDF11N50ZH TO−220FP (Pb−Free, Halogen−Free)

www.onsemi.com PACKAGE DIMENSIONS TO−220 FULLPACK, 3−LEAD CASE 221AH ISSUE F DIM MIN MAX MILLIMETERS D 14.70 15.30 E 9.70 10.30 A 4.30 4.70 b 0.54 0.84 P 3.00 3.40 e L1 --- 2.80 c 0.49 0.79 L 12.50 14.73 b2 1.10 1.40 Q 2.80 3.20 A2 2.50 2.90 A1 2.50 2.90 H1 6.60 7.10 E Q e D L P 12 3 b SEATING PLANE A A1H1 c NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR UNCONTROLLED IN THIS AREA. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH AND GATE PROTRUSIONS. MOLD FLASH AND GATE PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE DIMENSIONS ARE TO BE MEASURED AT OUTERMOST EXTREME OF THE PLASTIC BODY. 5. DIMENSION b2 DOES NOT INCLUDE DAMBAR PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION SHALL NOT EXCEED 2.00. 6. CONTOURS AND FEATURES OF THE MOLDED PACKAGE BODY MAY VARY WITHIN THE ENVELOP DEFINED BY DIMENSIONS A1 AND H1 FOR MANUFACTURING PURPOSES.

2.54 BSC

M0.14 MA A B C E/2 M0.25 MAB C3X B NOTE 3 FRONT VIEW SIDE VIEW SECTION D−D ALTERNATE CONSTRUCTION SECTION A−A A NOTE 6 A DD NOTE 6 ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidia ries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 NDF11N50Z/D LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative