P0130AA STMICROELECTRONICS | Alldatasheet

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SENSITIVE 0.8A SCRs May 2002 - Ed: 2 MAIN FEATURES:

DESCRIPTION

The P0130AA is a gate sensitive SCR, packaged in TO-92, used in conjunction of a TN22 A.S.D™ and of a resistor in electronic starter for fluores- cent tubelamps. Symbol Value Unit IT(RMS) 0.8 A VDRM /VRRM 100 V IGT 1 µA ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tl = 55°C 0.8 A IT(AV) Average on-state current (180° conduction angle) Tl = 55°C 0.5 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms Tj = 25°C A tp = 10 ms 7 I²tI ²t Value for fusing tp = 10ms Tj = 25°C 0.24 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 1 A PG(AV) Average gate power dissipation Tj = 125°C 0.1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C A K G TO-92

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) THERMAL RESISTANCES PRODUCT SELECTOR Symbol Test Conditions P0130AA Unit IGT VD = 12 V RL = 140 Ω MIN. 0.1 µAMAX. 1 VGT MAX. 0.8 V VGD VD = VDRM RL = 3.3 kΩ RGK = 1 kΩ Tj = 125°C MIN. 0.1 V VRG IRG = 10 µA MIN. 8V IH IT = 50 mA RGK = 1 kΩ MAX. 5 mA IL IG = 1 mA RGK = 1 kΩ MAX. 6 mA dV/dt V D = 67 % VDRM RGK = 1 kΩ Tj = 125°C MIN. 25 V/µs VTM ITM = 1.6 A tp = 380 µs Tj = 25°C MAX. 1.95 V Vt0 Threshold voltage Tj = 125°C MAX. 0.95 V R d Dynamic resistance Tj = 125°C MAX. 600 m Ω IDRM IRRM VDRM = VRRM RGK = 1 kΩ Tj = 25°C MAX. 1 µA Tj = 125°C MAX. 100 Symbol Parameter Value Unit R th(j-i) Junction to case (DC) 80 °C/W R th(j-a) Junction to ambient (DC) 150 °C/W Part Number Voltage Sensitivity Package P0130AA 100V 1 µA TO-92

ORDERING INFORMATION

Note: xx = sensitivity, y = voltage Part Number Marking Weight Base Quantity Packing mode P0130AA 1EA3 P0130AA 0.2 g 2500 Bulk P0130AA 2AL3 P0130AA 0.2 g 2000 Ammopack Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus lead temperature. Fig. 2-2: Average and D.C. on-state current versus ambient temperature. Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. P 01 30 A A 1EA3 SENSITIVE SCR SERIES CURRENT: 0.8A SENSITIVITY: 30: 1µA VOLTAGE: A: 100V PACKAGE: A: TO-92 PACKING MODE: 1EA3: TO-92 bulk 2AL3: TO-92 ammopack Blank P(W) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IT(av)(A) Tlead or Ttab (°C) 1.1 1.0 0.9 0.7 0.8 0.5 0.6 0.1 0.4 0.3 0.2 0.0 02 5 5 0 75 100 125 IT(av)(A) 1.2 1.1 1.0 0.8 0.9 0.6 0.7 0.2 0.5 0.4 0.3 0.1 02 5 5 0 75 100 125 0.0 Tamb(°C) K = [Zth(j-a)/Rth(j-a)] tp(s) 1.00 0.10 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2

Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5:Relative variation of holding current versus gate-cathode resistance (typical values). Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. IGT, IH, IL[Tj] / IGT, IH, IL[T] = 25°C 0-20-40 20 40 60 80 100 120 140 Tj(°C) IH[Rgk]/IH[Rgk=1k ]Ω Rgk(kΩ) dV/dt[Rgk] / dV/dt[Rgk=1k ]Ω Rgk(kΩ) 00.1 1.0 10.0 dV/dt[Cgk] / dV/dt[Rgk=1k ]Ω 2103 4 5 6 7 Cgk(nF) 1 10 100 10000 ITSM(A) Non repetitive Tj initial=25°C Tamb=25°C Repetitiv e Numberofcycles Onecycle tp=10ms ITSM(A), I t(A s)22 100.0 10.0 1.0 0.1 0.01 0.10 1.00 10.00 tp(ms)

Fig. 10: On-state characteristics (maximum values). Ω ITM(A) 1E+1 1E+0 1E-1 1E-2 VTM(V) PACKAGE MECHANICAL DATA TO-92 (Plastic) DF a E B A C REF. DIMENSIONS Millimeters Inches A 1.35 0.053 B 4.70 0.185 C 2.54 0.100 D 4.40 0.173 E 12.70 0.500 F 3.70 0.146 a 0.50 0.019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com