OPT6794 ETC1 | Alldatasheet
Document overview
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Technical content
The OPT6794 is a high-sensitivity NPN silicon DIMENSIONS (Unit:mm) phototransistor mounted in a clear plastic package. With lensed package this small phototransistor is designed to optimize the mechanical resolution coupling efficiency, cost and reliability.
FEATURES
- Lensed for high sensitivity
- High reliability and stable characteristics
- Low-cost
APPLICATIONS
- Optical counters
- Optical detectors
- Camera stroboscopes * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. /G67b MAXIMUM RATINGS ( T a = 2 5 /Gb07) I t e m Symbol R a t i n g U n i t C-E Voltage. V CEO 35 V E-C Voltage. I F 6 V Collector current. Ic 20 /G6c8/G69c Collector Power dissipation. Pc 50 /G6c8/G6b2 Operating temp. Topr. -25 ~ +85 °C Storage temp. Tstg. -30 ~+100 °C Soldering temp. * 1 Tsol. 260 °C within 5 seconds /G6851.Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICAL CHARACTERISTICS ( T a = 2 5 /Gb07) Item Symbol Conditions Min. Typ. Max. Unit Collector dark current. I CEO V CEO=10V, Ev=0 - 1 100 nA L i g h t c u r r e n t . *2 I CEL VCE=3V,Ev=1000LUX 0.5 4.0 - mA C-E Saturation Voltage V CE(SAT) Ic=0.2/Gee2,2000LUX - 0.2 0.4 V Rise time tr - 2.5 - µsec. Switching speeds Fall time tf - 3.8 - µsec. Spectral Sensitivity /Gd1b 450~1050 nm Peak Sensitivity wavelength /Gd1bP 880 nm H a l f a n g l e /Gcfc/Gd18 ±17 deg. *2 Tungsten lamp of a color temperature of T=2856/Gd26K /G67b/G67b/G67b/G67b/G67b 2-/Gcd60.5
24.0 Min
/Gf5b /Gf5c 2.5 2.0 8.7 7.7
1.3 Max
5.7 5.0 /Gf5b Emitter /Gf5c Collector