OPT101P-J

OPT101_03 BURR-BROWN | Alldatasheet

Document overview

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Technical content

Wavelength (nm) 200 300 400 500 600 700 800 900 1000 1100 Voltage Output (V/µW) Using Internal 1M Ω Resistor InfraredUltraviolet Blue Green Yellow Red 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Photodiode Responsivity (A/W) OPT101

FEATURES

G SINGLE SUPPLY: +2.7 to +36V G PHOTODIODE SIZE: 0.090 x 0.090 inch G INTERNAL 1M Ω FEEDBACK RESISTOR G HIGH RESPONSIVITY: 0.45A/W (650nm) G BANDWIDTH: 14kHz at R F = 1MΩ G LOW QUIESCENT CURRENT: 120 µA G AVAILABLE IN 8-PIN DIP AND 8-LEAD SURFACE-MOUNT PACKAGES MONOLITHIC PHOTODIODE AND SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER 1M Ω OPT101 3pF 8pF λ VB 7.5mV

DESCRIPTION

The OPT101 is a monolithic photodiode with on-chip transimpedance amplifier. Output voltage increases linearly with light intensity. The amplifier is designed for single or dual power-supply operation, making it ideal for battery- operated equipment. The integrated combination of photodiode and transimpedance amplifier on a single chip eliminates the problems commonly encountered in discrete designs such as leakage current errors, noise pick-up, and gain peaking due to stray capacitance. The 0.09 x 0.09 inch photodiode is operated in the photoconductive mode for excellent linearity and low dark current. The OPT101 operates from +2.7V to +36V supplies and quiescent current is only 120µA. It is available in clear plastic 8-pin DIP, and J-formed DIP for surface mounting. Temperature range is 0°C to +70°C.

APPLICATIONS

G LABORATORY INSTRUMENTATION G POSITION AND PROXIMITY SENSORS G PHOTOGRAPHIC ANALYZERS G BARCODE SCANNERS G SMOKE DETECTORS G CURRENCY CHANGERS SBBS002A – JANUARY 1994 – REVISED OCTOBER 2003 www.ti.com PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 1994-2003, Texas Instruments Incorporated Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners.

SBBS002Awww.ti.com SPECIFICATIONS At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted. PHOTODIODE SPECIFICATIONS TA = +25°C, VS = +2.7V to +36V unless otherwise noted. Photodiode of OPT101P PARAMETER CONDITIONS MIN TYP MAX UNITS Photodiode Area (0.090 x 0.090in) 0.008 in (2.29 x 2.29mm) 5.2 mm 2 Current Responsivity 650nm 0.45 A/W 650nm 865 µA/W/cm 2 Dark Current V DIODE = 7.5mV 2.5 pA vs Temperature Doubles every 7°C Capacitance 1200 pF OPT101P PARAMETER CONDITIONS MIN TYP MAX UNITS RESPONSIVITY Photodiode Current 650nm 0.45 A/W Voltage Output 650nm 0.45 V/ µW vs Temperature 100 ppm/ °C Unit to Unit Variation 650nm ±5% Nonlinearity (1) FS Output = 24V ±0.01 % of FS Photodiode Area (0.090 x 0.090in) 0.008 in 2 (2.29 x 2.29mm) 5.2 mm 2 DARK ERRORS, RTO (2) Offset Voltage, Output +5 +7.5 +10 mV vs Temperature ±10 µV/°C vs Power Supply V S = +2.7V to +36V 10 100 µV/V Voltage Noise, Dark, fB = 0.1Hz to 20kHz V S = +15V, VPIN3 = –15V 300 µVrms TRANSIMPEDANCE GAIN Resistor 1M Ω Tolerance, P ±0.5 ±2% W ±0.5 % vs Temperature ±50 ppm/ °C FREQUENCY RESPONSE Bandwidth V OUT = 10Vp-p 14 kHz Rise Fall Time, 10% to 90% V OUT = 10V Step 28 µs Settling Time, 0.05% V OUT = 10V Step 160 µs 0.1% 80 µs 1% 70 µs Overload Recovery 100%, Return to Linear Operation 50 µs OUTPUT Voltage Output, High (V S) – 1.3 (V S) – 1.15 V Capacitive Load, Stable Operation 10 nF Short-Circuit Current V S = 36V 15 mA POWER SUPPLY Operating Voltage Range +2.7 +36 V Quiescent Current Dark, V PIN3 = 0V 120 240 µA R L = ∞ , VOUT = 10V 220 µA TEMPERATURE RANGE Specification 0 +70 °C Operating 0 +70 °C Storage –25 +85 °C Thermal Resistance, θJA 100 °C/W NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.

SBBS002A www.ti.com OP AMP SPECIFICATIONS At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted. OPT101 Op Amp (1) PARAMETER CONDITIONS MIN TYP MAX UNITS INPUT Offset Voltage ±0.5 mV vs Temperature ±2.5 µV/°C vs Power Supply 10 µV/V Input Bias Current (–) Input 165 pA vs Temperature (–) Input Doubles every 10°C Input Impedance Differential 400 || 5 M Ω || pF Common-Mode 250 || 35 G Ω || pF Common-Mode Input Voltage Range Linear Operation 0 to [(V S) – 1] V Common-Mode Rejection 90 dB OPEN-LOOP GAIN Open-loop Voltage Gain 90 dB FREQUENCY RESPONSE Gain-Bandwidth Product(2) 2M H z Slew Rate 1V / µs Settling Time 1% 5.8 µs 0.1% 7.7 µs 0.05% 8.0 µs OUTPUT Voltage Output, High (V S) – 1.3 (V S) – 1.15 V Short-Circuit Current V S = +36V 15 mA POWER SUPPLY Operating Voltage Range +2.7 +36 V Quiescent Current Dark, V PIN3 = 0V 120 240 µA R L = ∞ , VOUT = 10V 220 µA NOTES: (1) Op amp specifications provided for information and comparison only. (2) Stable gains ≥ 10V/V.

SBBS002Awww.ti.com MOISTURE SENSITIVITY AND SOLDERING Clear plastic does not contain the structural-enhancing fillers used in black plastic molding compound. As a result, clear plastic is more sensitive to environmental stress than black plastic. This can cause difficulties if devices have been stored in high humidity prior to soldering. The rapid heating during soldering can stress wire bonds and cause failures. Prior to soldering, it is recommended that plastic devices be baked-out at +85°C for 24 hours. The fire-retardant fillers used in black plastic are not compat- ible with clear molding compound. The OPT101 plastic packages cannot meet flammability test, UL-94. PIN CONFIGURATIONS Top View DIP VS –In 1M Ω Feedback Common NC NC Output (1) NOTE: (1) Photodiode location. ABSOLUTE MAXIMUM RATINGS (1) (Vapor-Phase Soldering Not Recommended) NOTE: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. ELECTROSTATIC DISCHARGE SENSITIVITY This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper han- dling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. SPECIFIED PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY OPT101P DIP-8 NTC –25°C to +85°C OPT101 OPT101P Rail, 50 OPT101P-J DIP-8, Surface Mount (2) DTL –25°C to +85°C OPT101 OPT101P-J Rail, 50 NOTES: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet. (2) 8-pin DIP with J-formed leads for surface mounting. PACKAGE/ORDERING INFORMATION (1)

SBBS002A www.ti.com TYPICAL PERFORMANCE CURVES At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted. VOLTAGE RESPONSIVITY vs RADIANT POWER Radiant Power (µW) Output Voltage (V) 0.01 0.1 10 100 1k 1 0.1 0.01 0.001 R F = 1M Ω R F = 100k Ω R F = 10M Ω λ = 650nm R F = 50k Ω RESPONSE vs INCIDENT ANGLE Relative Response Incident Angle (°) 1.0 0.8 0.6 0.4 0.2 ±20 ±40 ±60 ±80 θY θX 1.0 0.8 0.6 0.4 0.2 θYθX Plastic DARK V OUT vs TEMPERATURE Temperature (°C) 0 1 0 2 0 3 04 05 06 0 7 0 7.8 7.6 7.4 7.2 Output Voltage (mV) VOLTAGE RESPONSIVITY vs IRRADIANCE Irradiance (W/m2) Output Voltage (V) 0.001 0.01 1 10 100 0.1 0.1 0.01 0.001 R F = 1M Ω R F = 100k Ω R F = 10M Ω λ = 650nm R F = 50k Ω VOLTAGE RESPONSIVITY vs FREQUENCY Frequency (Hz) 100 1k 10k 100k 0.1 0.01 0.001 Responsivity (V/µW)R F = 50kΩ , CEXT = 56pF R F = 10M Ω R F = 1M Ω R F = 100kΩ , CEXT = 33pF NORMALIZED SPECTRAL RESPONSIVITY Wavelength (nm) 200 300 400 500 600 700 800 900 1000 1100 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Normalized Current or Voltage Output Ultraviolet Blue Green Yellow Red 70°C 25°C Infrared 650nm (0.45A/W)

SBBS002Awww.ti.com TYPICAL PERFORMANCE CURVES (Cont.) At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted. QUIESCENT CURRENT vs TEMPERATURE Temperature (°C) 01 0 2 0 3 0 4 0 6 0 50 70 300 275 250 225 200 175 150 125 100 Quiescent Current (µA) VS = 15V, VO U T – VPIN3 = 15V VS = +15V, VO U T – VPIN3 = 0V VS = +5V, VO U T – VPIN3 = 0V VS = 5V, VO U T – VPIN3 = 5V QUIESCENT CURRENT vs (V OUT – VPIN3) VOUT – VPIN3 (V) 0 5 10 15 20 25 30 35 40 300 250 200 150 100 Quiescent Current (µA) VS = 2.7V VS = 36V VS = 15V SHORT CIRCUIT CURRENT vs V S VS (V) 0 5 10 15 20 25 30 35 40 Short Circuit Current (mA) (IBIAS-IDARK ) vs TEMPERATURE Temperature (°C) 0 1 02 03 04 0 5 0 6 0 7 0 180 160 140 120 100 –20 –40 IBIAS-IDARK (pA) 1M Ω OPT101 3pFIFEEDBACK (IBIAS-IDARK ) λ VB IBIAS 8pF IDARK NOISE EFFECTIVE POWER vs MEASUREMENT BANDWIDTH, V S = +15, VOUT – VPIN3 = 0 Bandwidth (Hz) 10 100 1k 10k 100k 1M 10–7 10–8 10–9 10–10 10–11 10–12 Noise Effective Power (W) R F = 10M Ω R F = 50k || 56pF R F = 100k || 33pF R F = 1M Ω INTER N AL OUTPUT NOISE VOLTAGE vs MEASUREMENT BANDWIDTH, V S = +15, VOUT – VPIN3 = 15V Frequency (Hz) 10 100 1k 10k 100k 1M 1000 100 0.1 Noise Voltage (µVrms) R F = 50kΩ || 56pF R F = 10M Ω R F = 1M Ω INTER N AL R F = 100kΩ || 33pF

SBBS002A www.ti.com TYPICAL PERFORMANCE CURVES (Cont.) At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted. SMALL SIGNAL RESPONSE LARGE SIGNAL RESPONSE SMALL SIGNAL RESPONSE (C LOAD = 10,000 pF) (Pin 3 = 0V) SMALL SIGNAL RESPONSE (C LOAD = 10,000 pF) (Pin 3 = –15V)

the internal 1MΩ resistor may require special consideration. the op amp output to be driven to ground at high temperatures. operating region when the photodiode is not exposed to light. be negative when sensing dark conditions. op amp circuitry, the OPT101 would not perform properly. allows easy positioning of narrowly focused light sources. compared to the surrounding active circuitry. identical large-signal and small-signal response. below approximately 0.05% up to 100µA photodiode current. to several percent in this region. nonlinearity will occur at lower radiant power. FIGURE 5. Three-Wire Remote Light Measurement.

ORDERABLE DEVICE STATUS(1) PACKAGE TYPE PACKAGE DRAWING PINS PACKAGE QTY OPT101P ACTIVE PDIP NTC 8 50 OPT101P-J ACTIVE SOP DTL 8 50 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. PACKAGE OPTION ADDENDUM www.ti.com 14-Oct-2003

MPDI059 – APRIL 2001 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 NTC (R-PDIP-T8) PLASTIC DUAL-IN-LINE 4202487/A 03/01 0.390 (9,91) 0.360 (9,14) 0.238 (6,05) 0.275 (6,99) 0.300 (7,62) 0.325 (8,26) 0.008 (0,20) 0.015 (0,38) 5.5°–8.5° 0.100 (2,54) 0.120 (3,05) 0.120 (3,05) 0.135 (3,43) 0.015 (0,38) MIN 0.070 (1,78) 0.045 (1,14) 0.005 (0,13) MIN 4 PL 1/2 Lead 0.030 (0,762) 0.045 (1,143) 4 PL 0.014 (0,36) 0.022 (0,56) Base Plane Seating Plane Index Area – C – 0.100 (2,54) 0.010 (0,25) 0.160 (4,06) 0.115 (2,92) 0.165 (4,19) MAX 0.300 (7,63) 0.430 (10,92) MAX 0.060 (1,52) MAX Polished Surface CM Photodiode Area E F F C C H D H D L D C E NOTES: A. All linear dimensions are in inches (millimeters). B. This drawing is subject to change without notice. C. Dimensions are measured with the package seated in JEDEC seating plane gauge GS-3. D. Dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 (0,25). E. Dimensions measured with the leads constrained to be perpendicular to Datum C. F. Dimensions are measured at the lead tips with the leads unconstrained. G. Pointed or rounded lead tips are preferred to ease insertion. H. Maximum dimensions do not include dambar protrusions. Dambar protrusions shall not exceed 0.010 (0,25). I. Distance between leads including dambar protrusions to be 0.005 (0,13) minumum. J. A visual index feature must be located within the cross–hatched area. K. For automatic insertion, any raised irregularity on the top surface (step, mesa, etc.) shall be symmetrical about the lateral and longitudinal package centerlines. L. Center of photodiode must be within 0.010 (0,25) of center of photodiode area

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