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High Reliability Optically Coupled Isolator OPI120TX, OPI120TXV © TT electronics plc Issue B 11/2016 Page 1 OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. Description: Each OPI120TX and OPI120TXV is an opƟcally coupled isolator that consists of a gallium aluminum arsenide infrared light emiƫng diode (OP235 TX or OP235TXV) and an NPN silicon phototransistor (OP804TX or OP804TXV), which are sealed in a high dielectric plasƟc housing. This series is designed for applicaƟons that require high voltage isolaƟon between input and output. TX and TXV devices are processed to OPTEK’s military screening program paƩerned aŌer MIL‐PRF‐19500. Please refer to ApplicaƟon BulleƟns 208 and 210 for addiƟonal design informaƟon and reliability (degradaƟon) data. Contact your local representaƟve or OPTEK for more informaƟon. Applications: Requiring high voltage isolation between input and output Electrical isolation in dirty environments Industrial equipment Medical equipment Office equipment Features: High current transfer ratio 15 kV electrical isolation Base lead provided for conventional transistor biasing TX and TXV devices processed to MIL-PRF-19500 Part Number LED Peak Wavelength Sensor IsolaƟon Voltage (,000) CTR Min IF (mA) Typ / Max VCE (Volts) Max Lead Length / Spacing OPI120TX 890 nm Transistor 15 20 10 / 50 25 0.40" / 0.75" OPI120TXV DIMENSIONS ARE IN: INCHES [ MILLIMETERS] Trans. NPNBase Collector Emitter Anode Cathode Note: This is an “unsealed view” of the isolator
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. High Reliability Optically Coupled Isolator OPI120TX, OPI120TXV Issue B 11/2016 Page 2 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Notes: (1) Measured with input leads shorted together and output leads shorted together in air with a maximum relaƟve humidity of 50%. If suitably encapsulated or oil‐immersed, the isolaƟon voltage is increased to at least 25 kV. (2) Derate linearly 2.0 mW/° C above 25° C. (3) Derate linearly 2.5 mW/° C above 25° C. (4) Methanol or isopropanol are recommended as cleaning agents. Absolute Maximum RaƟngs (TA = 25° C unless otherwise noted) OperaƟng Temperature Range ‐65° C to +125° C Storage Temperature Range ‐65° C to +150° C Lead Soldering Temperature [1/16 inch (1.6 mm) from the case for 5 seconds with soldering iron] 260° C Input Diode Forward DC Current 100 mA Reverse Voltage 2 V Power DissipaƟon(2) 200 mW Output Phototransistor Collector‐EmiƩer Voltage 30 V EmiƩer‐Base Voltage 5 V Power DissipaƟon(3) 250 mW Input‐to‐Output IsolaƟon Voltage(1) ±15 kVDC Collector‐Base Voltage 30 V ConƟnuous Collector Current 50 mA Electrical CharacterisƟcs (TA = 25° C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP236TX and OP236TXV for addiƟonal informaƟon ‐ for reference only) VF Forward Voltage(4) 1.00 1.40 1.70 V IF = 30 mA 1.20 1.60 1.90 IF = 30 mA, TA = ‐55° C 0.90 1.15 1.50 IF = 30 mA, TA = 100° C IR Reverse Current ‐ 0.1 10 µA VR = 2 V Output Phototransistor (See OP804TX, OP805TX and OP804TXV for addiƟonal informaƟon ‐ for reference only) V(BR)CBO Collector‐Base Breakdown Voltage 30 40 ‐ V IC = 100 µA , IE = 0, IF = 0 V(BR)CEO Collector‐EmiƩer Breakdown Voltage 30 40 ‐ V IC = 100 µA , IB = 0, IF = 0 V(BR)EBO EmiƩer‐Base Breakdown Voltage 5 ‐ ‐ V IC = 100 µA , IC = 0, IF = 0 IC(OFF) ‐ 0.2 100 na VCE = 10 V, IB = 0, IF = 0 ICB(OFF) ‐ 10 100 µA VCE = 10 V, IB = 0, IF = 0, TA = 100° C Collector‐Base Dark Current ‐ 0.1 10 nA VCB = 10 V, IE = 0, IF = 0 Collector‐EmiƩer Dark Current
© TT electronics plc General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics’ own data and is considered accurate at time of going to print. High Reliability Optically Coupled Isolator OPI120TX, OPI120TXV Issue B 11/2016 Page 3 OPTEK Technology, Inc. www.optekinc.com | www.ttelectronics.com Notes: (1) Measurement is taken during the last 500 µs of a single 1.0 ms test pulse. HeaƟng due to increased pulse rate or pulse width can cause change in measurement results. Electrical CharacterisƟcs (TA = 25°C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Combined IC(ON) 2.00 ‐ ‐ mA VCE = 5 V, IB = 0, IF = 10 mA 1.20 ‐ ‐ VCE = 5 V, IB = 0, IF = 10 mA, TA = ‐55° C 1.20 ‐ ‐ VCE = 5 V, IB = 0, IF = 10 mA, TA = 100° C VCE(SAT) Collector‐EmiƩer SaturaƟon Voltage ‐ 0.25 0.30 V IC = 2 mA, IB = 0, IF = 20 mA VISO IsolaƟon Voltage (Input to Output)(1) 15 30 ‐ See note 1. tr Output Rise Time ‐ 8 15 µs VCC = 10 V, IC = 2 mA, RL = 100Ω tf Output Fall Time ‐ 8 15 On‐State Collector Current (1)