OPE5885 ETC2 | Alldatasheet

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Technical content

DHigh Speed GaAlAs Infrared Emitter OPE5885 The OPE5885 is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm) that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1 package and has medium beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable.

FEATURES

  • High speed : 25ns rise time
  • 850nm wavelength
  • Medium beam angle
  • Low forward voltage
  • High power and high reliability
  • Available for pulse operating

APPLICATIONS

  • Emitter of IrDA
  • IR Audio and Telephone
  • High speed IR communication
  • IR LANs
  • Available for wireless digital data transmission STORAGE
  • Condition : 5°C~35°C,R.H.60%
  • Terms : within 3 months from production date
  • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS ( T a = 2 5 /Gb07) Item Symbol Rating Unit Power Dissipation P D/G67b 80 /G6c8/G6b2/G67b Forward current I F/G67b 60 /G6c8/G69c/G67b Pulse forward current /G67b/G67b/G67b/G67b/G67b/G67bIFP/G67b 0.5 A /G67b Reverse voltage V R/G67b 4.0 /G6b1/G67b Operating temp. Topr. -20~ +70 °C/G67b S o l d e r i ng temp. /G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G67b/G6852 Tsol. 240 . °C/G67b /G6851.Duty ratio = 1/100, pulse width=0.1ms. /G6852.Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICAL CHARACTERISTICS ( T a = 2 5 /Gb07) Item Symbol Conditions Min. Typ. Max. Unit Forward voltage V F/G67b IF=50/G6c8/G69c/G67b 1.5 2.0 V Reverse current I R/G67b VR=4V/G67b/G67b/G67b 10 µ/G69c/G67b Capacitance Ct f=1 /G6a8/G6a3/G6d5/G67b/G67b 20 /Gef2/G67b Radiant intensity Ie I F=50/G6c8/G69c/G67b20 40 /G67b/G6c8 /G6b2//Gefa Peak emission wavelength /Gd1bp/G67b IF=50/G6c8/G69c/G67b /G67b850 /G67b/G6c9/G6c8/G67b Spectral bandwidth 50% /Gcfc/Gd1b/G67bIF=50/Gee2/G67b /G67b45 /G67b/G6c9/G6c8/G67b Half angle /Gcfc/Gd18 I F=40/Gee2/G67b /G67b±17 /G67bdeg. Optical rise & fall time(10%~90%) tr/tf I F=50/Gee2/G67b /G67b25/13 /G67bns C u t o f f f r e q u e n c y *3 fc IF/G698/G690/G68b/G6c8/G69c/G67b/G69f/G69e/G67b /G686/G68c/G68b/G6c8/G69c/G67b/G6cb/G688/G6cb/G67b/G67b14 /G67bMHz *3. 10logPo(fc MHz)/Po(0.1 MHz)=-3 /Gf5b Anode /Gf5c Cathode 2.5 2-/Gcd60.5

23.0 Min

/Gf5b /Gf5c 2.0

0.8 Max

3.0 0.3 5.4 4.6 3.8 Tolerance : ±0.2mm

/circle6 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY 20° 30° 40° 50° 60° 70° 80° -20° -30° -40° -50° -60° -70° -80° -90° -10° 10° 0° 1 . 0 0 . 5 0 0 . 5 1 . 0 90° Relative Radiant intensity Ta=25/Gb07 H i g h S p e e d G a A l A s I n f r a r e d E m i t t e r OPE5885 /circle6 FORWARD CURRENT Vs. FORWARD VOLTAGE 100 Forward Voltage VF(V) Ta=25/Gb07 /circle6 RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. /circle6 RELATIVE RADIANT INTENSITY Vs. EMISSION WA VELENGTH. 1.0 0.8 0.6 0.4 0.2 0.0 700 750 800 850 900 950 Emission Wavelength /Gd1b/Gd1b/Gd1b/Gd1b(nm) Ta=25/Gb07 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 Ambient Temperature Ta(/Gb07/Gb07/Gb07/Gb07) IF=50mA /circle6 RADIANT INTENSITY Vs. FORWARD CURRENT. /circle6 FORWARD CURRENT Vs. AMBIENT TEMP. 100 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 Ambient Temperature Ta(/Gb07/Gb07/Gb07/Gb07) Ta=25 200 100 0.5 0.3 0.1 1 3 5 10 30 50 100 2 00 500 Forward Current IF(mA) Ta=25/Gb07