OPE5685 ETC | Alldatasheet

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Technical content

High Speed GaAlAs Infrared Emitter OPE5685 The OPE5685 is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm) that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 plastic package and has wide beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable.

FEATURES

  • High speed : 25ns rise time
  • 850nm wavelength
  • Wide beam angle
  • Low forward voltage
  • High power and high reliability
  • Available for pulse operating

APPLICATIONS

  • Emitter of IrDA
  • IR Audio and Telephone
  • High speed IR communication
  • IR LANs
  • Available for wireless digital data transmission STORAGE
  • Condition : 5°C~35°C,R.H.60%
  • Terms : within 3 months from production date
  • Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS ( T a = 2 5 °C) Item Symbol Rating Unit Power Dissipation P D 150 MW Forward current I F 100 MA Pulse forward current IFP 1.0 A Reverse voltage V R 4.0 V Operating temp. Topr. -25~ +85 °C Soldering temp. *2 Tsol. 260 . °C *1.Duty ratio = 1/100, pulse width=0.1ms. *2.Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICAL CHARACTERISTICS ( T a = 2 5 °C) Item Symbol Conditions Min. Typ. Max. Unit Forward voltage V F I F=50mA 1.5 2.0 V Reverse current I R V R=4V 10 µA Capacitance Ct f=1 MHz 20 pF Radiant intensity Ie I F=50mA 50 mW/sr Peak emission wavelength λp I F=50mA 850 nm Spectral bandwidth 50% ∆λ I F=50mA 45 nm Half angle ∆θ I F=50mA ±22 deg. Optical rise & fall time(10%~90%) tr/tf I F=50mA 25/13 ns C u t o f f f r e q u e n c y *3 fc IF=50mA DC +10mA p-p 14 MHz *3. 10logPo(fc MHz)/Po(0.1 MHz)=-3 2-/Gcd60.5

24.0 Min

/Gf5b /Gf5c 2.5 2.0 /Gf5b Anode /Gf5c Cathode 8.7 7.7

1.3 Max

5.7 5.0 Tolerance : ±0.2mm

High Speed GaAlAs Infrared Emitter OPE5685 /circle6 FORWARD CURRENT Vs. FORWARD VOLTAGE 100 Forward Voltage VF(V) Ta=25°C /circle6 RELATIVE RADIANT INTENSITY Vs. AMBIENT TEMP. /circle6 RELATIVE RADIANT INTENSITY Vs. EMISSION WA VELENGTH. 1.0 0.8 0.6 0.4 0.2 0.0 700 750 800 850 900 950 Emission Wavelength λλλλ(nm) Ta=25°C 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 Ambient Temperature Ta(°C) IF=50mA /circle6 ANGULAR DISPLACEMENT Vs RELATIVE RADIANT INTENSITY 20° 30° 40° 50° 60° 70° 80° -20° -30° -40° -50° -60° -70° -80° -90° -10° 10° 0° 1 . 0 0 . 5 0 0 . 5 1 . 0 90° Relative Radiant intensity Ta=25°C /circle6 RADIANT INTENSITY Vs. FORWARD CURRENT. /circle6 FORWARD CURRENT Vs. AMBIENT TEMP. 100 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 Ambient Temperature Ta(°C) Ta=25 200 100 0.5 0.3 0.1 1 3 5 10 30 50 100 2 00 500 Forward Current IF(mA) Ta=25°C