OPD0606 KODENSHI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
High Speed Sensitivity Common cathode type PIN Photo Diode 1. Structure 1.1 Chip Size : 0.68 X 0.68mm
1.2 Chip Thickness : 280±20um
1.3 Metallization : Top - Al, Bottom - Au
1.4 Passivation : Silicon Nitride
1.5 Bonding Pad Size
- Anode(Top) : 150um - Cathode(Bottom) : 680um X 680um 1.6 Active Area : 0.54mm X 0.54mm 2. Electrical-Optical Characteristics (Ta=25℃) Symbol Min Typ Max Unit Condition VOP 0.3 0.32 V Note(1) ISC 2 2.6 uA Note(1) λ nm λP 780 nm VF 0.5 1.3 V IF=10mA ID 5 10 nA VR=10V BVR 30 V IR=10uA Note(1) : Parallel light of 1,000Lux illumination is applied by a Tungsten lamp of 2856k. 3. Maximum Ratings (Ta=25℃) Symbol BVR TJ Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr Unit V 430~1,100Spectrum Sensitivity Reverse Breakdown Voltage Junction Temperature Rating 150 Reverse Breakdown Voltage OPD0606 Parameter Open Circuit Voltage Short Circuit Current AUK Corp. Parameter Peak Sensing Wavelength Forward Voltage Dark Current unit : ㎛