OPB1204 KODENSHI | Alldatasheet

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Technical content

  1. Structure 1.1 Chip Size : 1.2mm X 0.45mm

1.2 Chip thickness : 230±20um

1.3 Metallization : Top - Al(2um), Bottom - Au

1.4 Back Metal : Au(1,000Å)

1.5 Passivation : Silicon Nitride

1.6 Bonding Pad Size

  • Emitter : 130um - Base : 60um X 60um 2. Electro-Optical Characteristics (Ta=25℃) Symbol Min Typ Max Unit Condition ICEO 500 nA VCE=10V λp 880 nm λ nm *Parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856K. 3. Guaranteed Probed Electrical Characteristics (Ta=25℃) Symbol Min Typ Max Unit BVCEO 60 V BVCBO 90 V BVEBO 6.5 V BVECO 5V ICEO 50 nA VCES 300 mV tr/tf us hFE 400 1,600 - 4. Maximum Ratings (Ta=25℃) Symbol Rating Unit VCEO 30 V VECO 5V TJ 150 ℃ Eoyang factory,513-5 Eoyang-dong, Iksan, 570-210, Korea Tel. +82 63 839 1111 Fax. +82 63 835 8259 www.auk.co.kr AUK Corp. Peak Sensing Wavelength C-E Leakage Current Parameter Rise/Fall Time C-E Saturation Voltage E-B Voltage C-B Voltage Parameter Junction Temperature VCE=10V IEC=50uA 500~1,050Spectrum Sensitivity ICB=50uA ICE=50uA VCE=10V, Ic=1mADC Current Gain VCE=5V, IC=1mA, RL-1000Ω IC=5mA, IB=1mA Emitter-Collector Voltage Collector-Emitter Voltage OPB1204 ICE=500uA Condition 15/15(Typ) Parameter C-E Voltage E-C Voltage C-E Leakage Current : Emitter Electrode : Base Electrode